Reflective and transflective liquid crystal display device and its manufacturing method

• US 6,867,822 B2
• Filed: 01/12/2004
• Issued: 03/15/2005
• Est. Priority Date: 10/20/2000
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Kim, Dong Guk, Kim, Yong Beom, Baek, Heume Ti, Ha, Kyoung Su, Kim, Woong Kwon
• Primary Examiner(s): Chowdhury, Tarifur R.
• Assistant Examiner(s): QI, ZHI QIANG
• Application Number:
  US10/754,532
• Publication Number:
  US 20040141115A1
• Time in Patent Office: 428 Days
• Field of Search: 349/38, 349/113, 349/162, 349/114
• US Class Current: 349/38
• CPC Class Codes: G02F 1/133555 Transflectors
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

Disclosed are a reflective and transflective liquid crystal display device and its manufacturing method, which can raise light efficiency by removing a depressed part in a reflective device without forming a capacitor contact hole in a storage capacitor. The reflective liquid crystal display device includes: a plurality of gate lines and data lines intersecting on a first substrate, the gate line and the data line defining pixel areas; a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode; a capacitor lower electrode of a storage capacitor formed on the same plane as the gate line; an capacitor upper electrode formed integrally with the drain electrode on the capacitor lower electrode; a first insulation film inserted between the capacitor upper electrode and the capacitor lower electrode; and a thin film transistor array substrate connected with the drain electrode and including the reflective electrode formed at the pixel area.

Claims

1. A method for manufacturing a reflective liquid crystal display device, the method comprising:

a plurality of gate lines and data lines on a first substrate, the sate lines crossing the data lines;

forming a thin film transistor near the crossing of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode;

forming a capacitor lower electrode of a storage capacitor on the same plane as the gate line;

forming an insulation film on the capacitor lower electrode;

forming an capacitor upper electrode on an upper portion of the capacitor lower electrode, the capacitor upper electrode being formed integrally with the drain electrode;

forming a passivation layer on the capacitor upper electrode; and

forming a reflective electrode on the passivation layer, the reflected electrode being electrically connected with the drain electrode.

2. The method for manufacturing of claim 1, wherein the passivation layer is one of silicone nitride (SiNx), BCB and acryl resin.

4. The method for manufacturing of claim 1, wherein the insulation film is formed of one of silicone nitride (SiNx) and silicone oxide (SiOx).

3. A method for manufacturing a transflective liquid crystal display device, which has pixel areas defined into a reflection part and a transmission part, the method comprising:

forming a plurality of gate lines and data lines on a first substrate, the gate lines crossing the data lines;

forming a thin film transistor near the crossing of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode;

forming a capacitor lower electrode of a storage capacitor on the same plane as the gate line;

forming an insulation film on the capacitor lower electrode;

forming a capacitor upper electrode on an upper portion of the capacitor lower electrode, the capacitor upper electrode being formed integrally with the drain electrode;

forming a passivation layer on the capacitor upper electrode;

forming a reflective electrode on the passivation layer, the reflective electrode electrically connected with the drain electrode at the reflection area; and

forming a transflective electrode connected with the reflective electrode at the transmission area.

5. The method for manufacturing of claim 3, wherein the capacitor upper electrode extends along a boundary part between the reflective electrode and the transmissive electrode to prevent light leakage.

6. The method for manufacturing of claim 3, wherein the insulation film is formed of one of silicone nitride (SiNx) and silicone oxide (SiOx).

7. The method for manufacturing of claim 3, further comprising forming another insulation layer between the reflective electrode and the transmissive electrode.

8. The method for manufacturing of claim 3, wherein the passivation layer is one of silicone nitride (SiNx), BCB and acryl resin.

9. A method for manufacturing a reflective liquid crystal display device, comprising:

intersecting a plurality of gate lines and data lines on a first substrate;

forming a thin film transistor on the intersection of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode;

forming a capacitor lower electrode of a storage capacitor on the same plane as the gate line;

forming an insulation film on the capacitor lower electrode;

forming an capacitor upper electrode on an upper portion of the capacitor lower electrode, the capacitor upper electrode being formed integrally with the drain electrode;

forming a reflective electrode connected with the drain electrode; and

forming a passivation layer between the capacitor upper electrode and the reflective electrode.

10. The method for manufacturing of claim 9, wherein the passivation layer is one of silicone nitride (SiNx), BCB and acryl resin.

11. The method for manufacturing of claim 9, wherein the insulation film is formed of one of silicone nitride (SiNx) and silicone oxide (SiOx).

12. A method for manufacturing a transflective liquid crystal display device, which has pixel areas defined into a reflection part and a transmission part, the method comprising:

intersecting a plurality of sate lines and data lines on a first substrate;

forming a thin film transistor on the intersection of the gate line and the data line, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode;

forming a capacitor lower electrode of a storage capacitor on the same plane as the gate line;

forming an insulation film on the capacitor lower electrode;

forming a capacitor upper electrode on an upper portion of the capacitor lower electrode, the capacitor upper electrode being formed integrally with the drain electrode;

forming a reflective electrode connected with the drain electrode at the reflection area;

forming a transflective electrode connected with the reflective electrode at the transmission area; and

forming a passivation layer between the capacitor upper electrode and the reflective electrode.

13. The method for manufacturing of claim 12, wherein the passivation layer is one of silicone nitride (SiNx), BCB and acryl resin.

14. The method for manufacturing of claim 12, wherein the capacitor upper electrode extends along a boundary part between the reflective electrode and the transmissive electrode to prevent light leakage.

15. The method for manufacturing of claim 12, wherein the insulation film is formed of one of silicone nitride (SiNx) and silicone oxide (SiOx).

16. The method for manufacturing of claim 12, further comprising forming another insulation layer between the reflective electrode and the transmissive electrode.