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Plasma processes for depositing low dielectric constant films

  • US 6,869,896 B2
  • Filed: 08/26/2003
  • Issued: 03/22/2005
  • Est. Priority Date: 02/11/1998
  • Status: Expired due to Term
First Claim
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1. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosiloxanes, wherein at least one of the organosiloxanes is a cyclic organosiloxane comprising C, H, and O, and wherein the two or more organosiloxanes are selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, and 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.

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