Plasma processes for depositing low dielectric constant films
First Claim
1. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosiloxanes, wherein at least one of the organosiloxanes is a cyclic organosiloxane comprising C, H, and O, and wherein the two or more organosiloxanes are selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, and 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.
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Abstract
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
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Citations
16 Claims
- 1. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosiloxanes, wherein at least one of the organosiloxanes is a cyclic organosiloxane comprising C, H, and O, and wherein the two or more organosiloxanes are selected from the group consisting of 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, and 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.
- 6. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosilanes, wherein at least one of the organosilanes is a cyclic organosilane, wherein the cyclic organosilane is 1,3,5-trisilano-2,4,6-trimethylene, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.
- 11. A method for depositing a low dielectric constant film on a substrate, comprising reacting two or more organosiloxanes, wherein a first organosiloxane of the two or more organosiloxanes is cyclic and comprises C, H, and O and a ring comprising carbon and oxygen, while applying RF power, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant of about 3 or less.
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