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Increasing stress-enhanced drive current in a MOS transistor

  • US 6,870,179 B2
  • Filed: 03/31/2003
  • Issued: 03/22/2005
  • Est. Priority Date: 03/31/2003
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a region of semiconductor material that will become part of a channel of a MOS transistor structure, said region having opposing recessed portions that run along a width direction of the transistor structure; and

    a strained dielectric layer in contact with and conforming to surfaces of the recessed portions.

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