Power semiconductor device
First Claim
1. A power semiconductor device, comprising:
- a first resin-sealed switching element including a first gate electrode, a first emitter electrode and a first collector electrode;
a second resin-sealed switching element including a second gate electrode, a second emitter electrode and a second collector electrode;
a third resin-sealed switching element including a third gate electrode, a third emitter electrode and a third collector electrode;
a fourth resin-sealed switching element including a fourth gate electrode, a fourth emitter electrode and a fourth collector electrode; and
a bus bar having first to fourth bus electrodes provided thereon in this order, wherein said first resin-sealed switching element and said second resin-sealed switching element are arranged to face each other with said bus bar therebetween, and said third resin-sealed switching element and said fourth resin-sealed switching element are arranged to face each other with said bus bar therebetween, said first collector electrode and said second collector electrode are connected one over the other with said first bus electrode, said first emitter electrode and said second emitter electrode are connected one over the other with said second bus electrode, said third collector electrode and said fourth collector electrode are connected one over the other with said third bus electrode, and said third emitter electrode and said fourth emitter electrode are connected one over the other with said fourth bus electrode.
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Accused Products
Abstract
Emitter electrodes (Es) and collector electrodes (Cs) of elements (101 to 104) are connected to bus electrodes (361 to 364) of a bus bar (351), respectively. The bus bar (351) contains seven layers including four insulating layers (not shown) and three conductive layers (shown) interposed between the insulating layers. Namely, each of the bus electrodes (361 to 364) is connected to one of the conductive layers corresponding to one of a positive electrode (P), a negative electrode (N) and an intermediate electrode (L). The collector electrodes (Cs) of the elements (103 and 104) are connected one over the other to the bus electrode (361). The emitter electrodes (Es) of the elements (103 and 104) are connected one over the other to the bus electrode (362). The collector electrodes (Cs) of the elements (101 and 102) are connected one over the other to the bus electrode (363). The emitter electrodes (Es) of the elements (101 and 102) are connected one over the other to the bus electrode (364).
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Citations
12 Claims
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1. A power semiconductor device, comprising:
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a first resin-sealed switching element including a first gate electrode, a first emitter electrode and a first collector electrode;
a second resin-sealed switching element including a second gate electrode, a second emitter electrode and a second collector electrode;
a third resin-sealed switching element including a third gate electrode, a third emitter electrode and a third collector electrode;
a fourth resin-sealed switching element including a fourth gate electrode, a fourth emitter electrode and a fourth collector electrode; and
a bus bar having first to fourth bus electrodes provided thereon in this order, wherein said first resin-sealed switching element and said second resin-sealed switching element are arranged to face each other with said bus bar therebetween, and said third resin-sealed switching element and said fourth resin-sealed switching element are arranged to face each other with said bus bar therebetween, said first collector electrode and said second collector electrode are connected one over the other with said first bus electrode, said first emitter electrode and said second emitter electrode are connected one over the other with said second bus electrode, said third collector electrode and said fourth collector electrode are connected one over the other with said third bus electrode, and said third emitter electrode and said fourth emitter electrode are connected one over the other with said fourth bus electrode. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A power semiconductor device, comprising:
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a first resin-sealed switching element including a first gate electrode, a first emitter electrode and a first collector electrode;
a second resin-sealed switching element including a second gate electrode, a second emitter electrode and a second collector electrode;
a third resin-sealed switching element including a third gate electrode, a third emitter electrode and a third collector electrode;
a fourth resin-sealed switching element including a fourth gate electrode, a fourth emitter electrode and a fourth collector electrode;
a bus bar having first to fourth bus electrodes provided thereon in this order; and
a resin for sealing said first to fourth resin-sealed switching elements and said bus bar together, wherein said first resin-sealed switching element and said second resin-sealed switching element are arranged to face each other with said bus bar therebetween, and said third resin-sealed switching element and said fourth resin-sealed switching element are arranged to face each other with said bus bar therebetween, said first collector electrode and said second collector electrode are connected one over the other with said first bus electrode, said first emitter electrode and said second emitter electrode are connected one over the other with said second bus electrode, said third collector electrode and said fourth collector electrode are connected one over the other with said third bus electrode, and said third emitter electrode and said fourth emitter electrode are connected one over the other with said fourth bus electrode. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification