Bonding structure and method of making
First Claim
Patent Images
1. An electrical device comprising an interconnect and a pair of substrates at least one of which includes an integrated circuit, the pair of substrates being bonded together by a bond that includes a structure including;
- a lower portion adhered to at least one of the substrates, the lower portion including silicon dioxide adhered to silicon carbide;
an upper portion on the lower portion that is wider than the lower portion, the upper portion including silicon nitride; and
a composition selected from the group consisting of;
a graded material; and
a first material upon a second material.
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Accused Products
Abstract
An electrical device includes an interconnect and a pair substrates at least one of which includes an integrated circuit, the pair of substrates being bonded together by a bond that includes a structure having multiple widths and a composition that is selected from the group consisting of a graded material and a first material upon a second material.
32 Citations
43 Claims
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1. An electrical device comprising an interconnect and a pair of substrates at least one of which includes an integrated circuit, the pair of substrates being bonded together by a bond that includes a structure including;
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a lower portion adhered to at least one of the substrates, the lower portion including silicon dioxide adhered to silicon carbide;
an upper portion on the lower portion that is wider than the lower portion, the upper portion including silicon nitride; and
a composition selected from the group consisting of;
a graded material; and
a first material upon a second material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An electrical device comprising a pair of substrates bonded together by a bonding structure, wherein:
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at least one of the substrates includes an integrated circuit, a portion of a semiconductor wafer, and an interconnect;
the bonding structure is adhered to at least one of the substrates;
the bonding structure has a lower portion adhered to at least one of the substrates;
the bonding structure has an upper portion on the lower portion;
the composition of the upper portion is different from that of the lower portion; and
the upper portion is wider than the lower portion. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method of bonding a firing chamber structure to a thin film stack of a printhead, wherein the thin film stack is on a substrate, includes a resistor material for heating the firing chamber structure, and defines the bottom of the firing chamber structure, the method comprising:
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forming a graded material upon the thin film stack;
forming a plurality of bonding structures from the graded material by removing one component of the graded material at a higher material removal rate than another component of the graded material;
forming a barrier layer conformably upon the plurality of bonding structures; and
forming a firing chamber in the barrier layer.
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31. An electrical device comprising a pair of semiconductor wafer portions each having at least one integrated circuit fabricated thereon and being bonded together by a bond that includes a structure including:
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a first portion adhered to at least one of the substrates, the first portion including silicon nitride;
a second portion on the first portion that is wider than the first portion the second portion including silicon dioxide adhered to silicon carbide; and
a composition selected from the group consisting of;
a graded material; and
a first material upon a second material. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification