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Bonding structure and method of making

  • US 6,871,942 B2
  • Filed: 04/15/2002
  • Issued: 03/29/2005
  • Est. Priority Date: 04/15/2002
  • Status: Expired due to Term
First Claim
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1. An electrical device comprising an interconnect and a pair of substrates at least one of which includes an integrated circuit, the pair of substrates being bonded together by a bond that includes a structure including;

  • a lower portion adhered to at least one of the substrates, the lower portion including silicon dioxide adhered to silicon carbide;

    an upper portion on the lower portion that is wider than the lower portion, the upper portion including silicon nitride; and

    a composition selected from the group consisting of;

    a graded material; and

    a first material upon a second material.

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