Process for high yield fabrication of MEMS devices

• US 6,872,319 B2
• Filed: 09/30/2002
• Issued: 03/29/2005
• Est. Priority Date: 09/30/2002
• Status: Active Grant

• Current Assignee: Teledyne Scientific & Imaging, LLC (Teledyne Technologies Incorporated)
• Original Assignee: Rockwell Scientific Licensing LLC
• Inventors: Tsai, Chialun
• Primary Examiner(s): Alanko, Anita
• Application Number:
  US10/260,250
• Publication Number:
  US 20040060898A1
• Time in Patent Office: 911 Days
• Field of Search: 216/2, 216/24, 216 33- 36, 216 40- 41, 216/49, 216/67, 438/29
• US Class Current: 216/2
• CPC Class Codes: B81C 99/0065 Process control; Yield prediction
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B

Abstract

A MEMS fabrication process eliminates through-wafer etching, minimizes the thickness of silicon device layers and the required etch times, provides exceptionally precise layer to layer alignment, does not require a wet etch to release the moveable device structure, employs a supporting substrate having no device features on one side, and utilizes low-temperature metal-metal bonding which is relatively insensitive to environmental particulates. This process provided almost 100% yield of scanning micromirror devices exhibiting scanning over a 12° optical range and a mechanical angle of ^±3° at a high resonant frequency of 2.5 kHz with an operating voltage of only 20 VDC.

Claims

1. A process for fabricating a MEMS device, comprising the steps of:

providing a first wafer comprised of a first etch stop layer sandwiched between a first device layer and a supporting substrate layer;

depositing an etch resistant layer on the first device layer;

depositing a first metal layer on the first device layer in predetermined areas to define first bond pad areas;

removing the etch resistant layer and at least a portion of the first device layer in predetermined areas to form a stationary part of an actuator;

providing a second wafer which includes a second device layer;

depositing a second metal layer on the second device layer in predetermined second bond pad areas patterned to be alignable with the first bond pad areas on the first device layer;

bonding together the first bond pad areas on the first device layer and the second bond pad areas on the second device layer; and

removing the second device layer in predetermined areas so as to form a moveable part of the actuator and a moveable functional device element connected via at least one spring to at least one stationary pad, wherein the moveable part of the actuator is aligned relative to the stationary part of the actuator,

such that an electrical voltage applied between the moveable part of the actuator and the stationary part of the actuator tends to cause the moveable part of the actuator and the moveable functional device element to move relative to the stationary part of the actuator.

2. The process of claim 1, wherein at least one of the device layers is comprised of silicon.

3. The process of claim 1, wherein the first etch stop layer is comprised of silicon oxide.

4. The process of claim 1, wherein the supporting substrate layer is comprised of silicon.

5. The process of claim 1, wherein the etch resistant layer is comprised of an insulator and the step of depositing the first metal layer on the first device layer in predetermined areas further comprises the steps of:

applying and patterning a photoresist layer on the etch resistant layer;

selectively removing the etch resistant layer to expose the first device layer in the predetermined areas;

depositing the first metal layer; and

lifting off the photoresist layer and metal deposited thereon.

6. The process of claim 5, wherein the insulator is silicon oxide.

7. The process of claim 1, wherein the etch resistant layer comprises a metal and the step of depositing the first metal layer on the first device layer in predetermined areas further comprises the steps of patterning and selectively removing the metal etch resistant layer.

8. The process of claim 1, wherein the step of removing the etch resistant layer further comprises removing by dry oxide plasma etching.

9. The process of claim 1, wherein the step of removing at least a portion of the first device layer in predetermined areas further comprises removing by plasma etching.

10. The process of claim 1, wherein the second wafer further comprises a second etch stop layer sandwiched between the second device layer and a handle substrate.

11. The process of claim 10, wherein the second etch stop layer is comprised of silicon oxide.

12. The process of claim 10, wherein the handle substrate is comprised of silicon.

13. The process of claim 10, further comprising, after the step of bonding, the step of:

removing the handle substrate and the second etch stop layer from the second device layer.

14. The process of claim 1, wherein at least one of the first and second metal layers comprise a gold layer and an adhesion layer, said adhesion layer being comprised of a metal selected from the group consisting of chromium, titanium, nickel and cobalt.

15. The process of claim 1, wherein the step of bonding together the first bond pad areas and the second bond pad areas further comprises thermal compression bonding.

16. A process for fabricating a MEMS device, comprising the steps of:

providing a first wafer comprised of a first silicon oxide etch stop layer sandwiched between a first silicon device layer and a supporting substrate layer;

depositing an etch resistant layer on the first silicon device layer;

depositing a first metal layer on the first silicon device layer in predetermined areas to define first bond pad areas;

removing the etch resistant layer and at least a portion of the first silicon device layer in predetermined areas to form a stationary part of an actuator;

providing a second wafer which includes a second silicon device layer;

depositing a second metal layer on the second silicon device layer in predetermined second bond pad areas patterned to be alignable with the first bond pad areas on the first silicon device layer;

bonding together the first bond pad areas on the first silicon device layer and the second bond pad areas on the second silicon device layer; and

removing the second silicon device layer in predetermined areas so as to form a moveable part of the actuator and a moveable functional device element connected via at least one silicon spring to at least one stationary silicon pad, wherein the moveable part of the actuator is aligned relative to the stationary part of the actuator,

such that an electrical voltage applied between the moveable part of the actuator and the stationary part of the actuator tends to cause the moveable part of the actuator and the moveable functional device element to move relative to the stationary part of the actuator.

17. The process of claim 16, wherein the supporting substrate layer is comprised of silicon.

18. The process of claim 16, wherein the etch resistant layer comprises silicon oxide and the step of depositing the first metal layer on the first silicon device layer in predetermined areas further comprises the steps of:

applying and patterning a photoresist layer on the etch resistant layer;

selectively removing the etch resistant layer to expose the first silicon device layer in the predetermined areas;

depositing the first metal layer; and

lifting off the photoresist layer and metal deposited thereon.

19. The process of claim 16, wherein the etch resistant layer comprises a metal and the step of depositing the first metal layer on the first device layer in predetermined areas further comprises the steps of patterning and selectively removing the metal etch resistant layer.

20. The process of claim 16, wherein the step of removing the etch resistant layer further comprises removing by dry oxide plasma etching.

21. The process of claim 16, wherein the step of removing at least a portion of the first device layer in predetermined areas further comprises removing by deep silicon plasma etching.

22. The process of claim 16, wherein the second wafer further comprises a second silicon oxide etch stop layer sandwiched between the second silicon device layer and a silicon handle substrate.

23. The process of claim 22, further comprising, after the step of bonding, the step of:

removing the handle substrate and the second etch stop layer from the second device layer.

24. The process of claim 16, wherein at least one of the first and second metal layers comprise a gold layer and an adhesion layer, said adhesion layer being comprised of a metal selected from the group consisting of chromium, titanium, nickel and cobalt.

25. The process of claim 16, wherein the step of bonding together the first bond pad areas and the second bond pad areas further comprises thermal compression bonding.

26. A process for fabricating a MEMS device, comprising the steps of:

providing a first wafer comprised of a first silicon oxide etch stop layer sandwiched between a first silicon device layer and a silicon supporting substrate layer;

depositing a silicon oxide etch resistant layer on the first silicon device layer;

depositing a first metal layer on the first silicon device layer in predetermined areas to define first bond pad areas;

removing the silicon oxide etch resistant layer and at least a portion of the first silicon device layer in predetermined areas to form a stationary part of an actuator;

providing a second wafer comprised of a second silicon oxide etch stop layer sandwiched between a second silicon device layer and a silicon handle substrate;

depositing a second metal layer on the second silicon device layer in predetermined second bond pad areas patterned to be alignable with the first bond pad areas on the first silicon device layer;

bonding together the first bond pad areas on the first silicon device layer and the second bond pad areas on the second silicon device layer by thermal compression bonding;

removing the handle substrate and the second etch stop layer from the second device layer; and

removing the second silicon device layer in predetermined areas so as to form a moveable part of the actuator and a moveable functional device element connected via at least one silicon spring to at least one stationary silicon pad, wherein the moveable part of the actuator is aligned relative to the stationary part of the actuator,

such that an electrical voltage applied between the moveable part of the actuator and the stationary part of the actuator tends to cause the moveable part of the actuator and the moveable functional device element to move relative to the stationary part of the actuator.

27. The process of claim 26, wherein the step of depositing the first metal layer on the first silicon device layer in predetermined areas comprises the steps of:

applying and patterning a photoresist layer on the etch resistant layer;

selectively removing the etch resistant layer to expose the first silicon device layer in the predetermined areas;

depositing the first metal layer; and

lifting off the photoresist layer and metal deposited thereon.

28. The process of claim 26, wherein at least one of the first and second metal layers comprise a gold layer and an adhesion layer, said adhesion layer being comprised of a metal selected from the group consisting of chromium, titanium, nickel and cobalt.

29. A process for fabricating a MEMS micromirror device, comprising the steps of:

providing a first wafer comprised of a first silicon oxide etch stop layer sandwiched between a first silicon device layer and a silicon supporting substrate layer;

depositing a silicon oxide etch resistant layer on the first silicon device layer;

depositing a first metal layer on the first silicon device layer in predetermined areas to define first bond pad areas;

removing the silicon oxide etch resistant layer and at least a portion of the first silicon device layer in predetermined areas to form a stationary part of a comb actuator;

providing a second wafer comprised of a second silicon oxide etch stop layer sandwiched between a second silicon device layer and a silicon handle substrate;

depositing a second metal layer on the second silicon device layer in predetermined second bond pad areas patterned to be alignable with the first bond pad areas on the first silicon device layer;

bonding together the first metal layer on the first bond pad areas on the first silicon device layer and the second metal layer on the second bond pad areas on the second silicon device layer by thermal compression bonding;

removing the handle substrate and the second etch stop layer from the second device layer; and

removing the second silicon device layer in predetermined areas so as to form a moveable part of the comb actuator and a moveable micromirror connected via at least one silicon spring to at least one stationary silicon pad, wherein the moveable part of the comb actuator is aligned relative to the stationary part of the comb actuator,

such that an electrical voltage applied between the moveable part of the comb actuator and the stationary part of the comb actuator tends to cause the moveable part of the comb actuator and the moveable micromirror to move relative to the stationary part of the comb actuator.

30. The process of claim 29, wherein at least one of the first and second metal layers comprise a gold layer and an adhesion layer, said adhesion layer being comprised of a metal selected from the group consisting of chromium, titanium, nickel and cobalt.