Semiconductor device and method of fabricating the same
First Claim
Patent Images
1. A method of manufacturing a display device comprising:
- forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers; and
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed.
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Abstract
Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.
164 Citations
38 Claims
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1. A method of manufacturing a display device comprising:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers; and
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a display device comprising:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
performing a rapid thermal annealing to the semiconductor layers after forming the gate insulating film. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of manufacturing a display device comprising:
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forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
irradiating the semiconductor layers with a laser light after forming the gate insulating film. - View Dependent Claims (15, 16, 17, 18)
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19. A method of manufacturing a display device comprising:
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forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers; and
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A method of manufacturing a display device comprising:
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forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
performing a rapid thermal annealing to the semiconductor layers after forming the gate insulating film. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A method of manufacturing a display device comprising:
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forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
irradiating the semiconductor layers with a laser light after forming the gate insulating film. - View Dependent Claims (35, 36, 37, 38)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTakemura, Yasuhiko
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Primary Examiner(s)Nguyen, Tuan H.
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Application NumberUS10/254,546Publication NumberTime in Patent Office915 DaysField of Search438/153, 438/154, 438/151, 438/166, 438/232, 438/164, 438/487, 438/795US Class Current438/151CPC Class CodesG09G 2300/0408 Integration of the drivers ...H01L 21/02422 Non-crystalline insulating ...H01L 21/02488 Insulating materialsH01L 21/02532 Silicon, silicon germanium,...H01L 21/02667 Crystallisation or recrysta...H01L 21/02686 Pulsed laser beamH01L 27/124 with a particular compositi...H01L 29/66757 Lateral single gate single ...Y10S 148/091 Laser beam processing of fets
