Device transferring method, and device arraying method and image display unit fabricating method using the same

• US 6,872,635 B2
• Filed: 04/09/2002
• Issued: 03/29/2005
• Est. Priority Date: 04/11/2001
• Status: Expired due to Term

• Current Assignee: Xiamen San'An Optoelectronics Co.Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Iwafuchi, Toshiaki, Hayashi, Kunihiko, Yanagisawa, Yoshiyuki, Ohba, Hisashi
• Primary Examiner(s): Nguyen, Tuan H.
• Assistant Examiner(s): PHAM, THANHHA S
• Application Number:
  US10/297,872
• Publication Number:
  US 20030162463A1
• Time in Patent Office: 1,085 Days
• Field of Search: 438 25- 26, 438/33, 438/51, 438/55, 438 64- 68, 438/110, 438113-114, 438/128, 438450-455, 438/460, 438463-464
• US Class Current: 438/463
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82039 using a laser
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 : with a particular shape, e.g. curved or truncated substrate

Abstract

A method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed is provided. The method includes steps of selectively heating the adhesive resin layer on the second substrate by laser irradiation from the back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding those to be transferred of the devices to the second substrate. At this time, portions, corresponding to the devices, of the adhesive layer are heated directly or indirectly via the devices or wiring portions by laser irradiation from the back surface side of the substrate. The heated portions of the adhesive resin layer selectively exhibit the adhesive forces. The heated portions of the adhesive layer are then cured, so that only the devices to be transferred are selectively transferred to the second substrate. As a result, only the devices to be transferred can be done so with certainty, efficiency, and accuracy without exerting adverse effect on other parts.

Claims

1. A device transferring method of selectively transferring devices arrayed on a first substrate to a second substrate on which an adhesive resin layer is previously formed, the method comprising the steps of:

selectively heating te adhesive resin layer on the second substrate by laser irradiation from a back surface side of the second substrate; and

curing a selectively heated portion of the adhesive resin layer, thereby adhesively bonding devices to be transferred of the devices arrayed on the first substrate to the second substrate.

2. The transferring method according to claim 1, wherein the heating step includes a step of heating portions of said adhesive resin layer located at positions corresponding to the devices to be transferred, by irradiating the portions of the adhesive resin layer with one or more laser beams.

3. The device transferring method according to claim 1, wherein the heating step includes a step of irradiating the devices to be transferred with laser beams to heat the devices to be transferred thereby heating portions of said adhesive resin layer located at positions corresponding to the devices to be transferred of the devices arrayed on the first substrate.

4. The device transferring method according to claim 1, wherein the heating step includes a step of irradiating one or more wiring portions, previously formed on the second substrate, with laser beams to heat said wiring portions, thereby heating portions of the adhesive resin layer located on said wiring portions.

5. The device transferring method according to claim 1, wherein the adhesive resin layer includes a thermoplastic adhesive resin.

6. The device transferring method according to claim 1, wherein the adhesive resin layer includes thermosetting adhesive resin.

7. The device transferring method according to claim 1, wherein the device is buried in an insulating material.

8. A device arraying method of re-arraying a plurality of devices arrayed on a first substrate to a second substrate, the method comprising the steps of:

a first transferring step including transferring the devices from the first substrate to a temporarily holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate and holding the devices on the temporarily holding member;

a covering step including covering the devices held on the temporarily holding member with a resin;

a dicing step including dicing the resin so as to isolate the devices from each other;

a second transferring step including transferring the resin-covered devices held on the temporarily holding member to the second substrate such that the resin-covered devices are spaced from each other with a pitch larger than a pitch of the resin-covered devices held on the temporarily holding member;

wherein the second transferring step includes the steps of selectively heating an adhesive resin layer on the second substrate by laser irradiation from a back surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding the devices to be transferred of the resin-covered devices to the second substrate.

9. A device arraying method according to claim 8, wherein the array pitch of the devices transferred to the temporarily holding member in the first transferring step is approximately an integer times the array pitch of the devices formed on the first substrate, and the array pitch of the devices transferred to the second transfer substrate in the second transferring step is approximately integer times the array pitch of the devices transferred to the temporarily holding member in the first transferring step.

10. The device arraying method according to claim 8, wherein the device is a semiconductor device using a nitride semiconductor.

11. The device arraying method according to claim 8, wherein the device is selected from the group consisting of a light emitting device, a liquid crystal control device, a photoelectric transfer device, a piezoelectric device, a thin film transistor device, a thin film diode device, a resistance device, a switching device, a micro-magnetic device, and a micro-optical device, and parts of the selected device thereof.

12. An image display unit fabricating method of fabricating an image display unit including light emitting devices disposed in a matrix, the method comprising the steps of:

a first transferring step including transferring the light emitting devices from the first substrate to a temporarily holding member such that the light emitting devices are spaced from each other with a pitch larger than a pitch of the light emitting devices arrayed on the first substrate and holding the light emitting devices on the temporarily holding member,

a covering step including covering the light emitting devices held on the temporarily holding member with a resin;

a dicing step including dicing the resin so as to isolate the light emitting devices from each other,

a second transferring step including transferring the resin-covered light emitting devices held on the temporarily holding member to the second substrate such that the resin-covered light emitting devices are spaced from each other with a pitch larger than a pitch of the resin covered light emitting devices held on the temporarily holding member;

wherein the second transferring step includes the steps of selectively heating an adhesive resin layer previously applied on a first surface side of the second substrate by laser irradiation from a second surface side of the second substrate, and curing the selectively heated portions of the adhesive resin layer, thereby adhesively bonding the devices to be transferred of the resin-covered light emitting devices to the second substrate.