Encapsulation of polymer based solid state devices with inorganic materials
First Claim
1. In a light-emitting device comprising a layer of an active light-emitting polymer sandwiched between a cathode and an anode and a protective layer, the improvement of the protective layer consisting essentially of:
- an encapsulating layer of low-temperature-applied inorganic material protecting the device against environmental attack, wherein the low-temperature-applied inorganic material comprises a nitride of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), carbon (C), silicon (Si), germanium (Ge), tin (Sn) or lead (Pb);
a low-temperature-applied coating comprising a non-reactive metal, wherein the low-temperature-applied coating is located between the device and the layer of inorganic material such that the low-temperature applied coating is next to the layer of inorganic material; and
a protective cover plate attached to the layer of inorganic material such that the layer of inorganic material is located between the low-temperature-applied coating and the protective cover plate.
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Abstract
Methods for creating a protective seal suitable for protecting polymer-based electronic devices, including light emitting diodes and polymer emissive displays, are disclosed together with the protected devices. The protective seal includes one or more thin films of silicon nitride (SiN) or other inorganic dielectric applied at low temperature. One or more nonreactive metal layers may be present in the protective layer as well. Other embodiments are disclosed which include a protective cover over the protective layers. These protective layers provide encapsulation with sufficient protection from the atmosphere to enable shelf life and stress life for polymer electronic devices that are adequate for commercial applications.
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Citations
22 Claims
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1. In a light-emitting device comprising a layer of an active light-emitting polymer sandwiched between a cathode and an anode and a protective layer, the improvement of the protective layer consisting essentially of:
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an encapsulating layer of low-temperature-applied inorganic material protecting the device against environmental attack, wherein the low-temperature-applied inorganic material comprises a nitride of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), carbon (C), silicon (Si), germanium (Ge), tin (Sn) or lead (Pb);
a low-temperature-applied coating comprising a non-reactive metal, wherein the low-temperature-applied coating is located between the device and the layer of inorganic material such that the low-temperature applied coating is next to the layer of inorganic material; and
a protective cover plate attached to the layer of inorganic material such that the layer of inorganic material is located between the low-temperature-applied coating and the protective cover plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for protecting a light-emitting device against water vapor and oxygen diffusion comprising an active light-emitting polymer sandwiched between a cathode and an anode consisting essentially of the steps of:
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encapsulating said device with an encapsulating layer of low-temperature-applied inorganic material, wherein the low-temperature-applied inorganic material comprises a nitride of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), carbon (C), silicon (Si), germanium (Ge), tin (Sn) or lead (Pb);
depositing a layer of a low-temperature applied coating comprising a non-reactive metal onto the device, wherein the low-temperature-applied coating is located between the device and the layer of inorganic material such that the low-temperature applied coating is next to the layer of inorganic material; and
attaching a protective plate to the layer of inorganic material such the layer of inorganic material is located between the low-temperature-applied coating and the protective plate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification