Encapsulation of polymer based solid state devices with inorganic materials

• US 6,873,101 B2
• Filed: 04/01/2003
• Issued: 03/29/2005
• Est. Priority Date: 08/03/1998
• Status: Expired due to Fees

• Current Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Original Assignee: E. I. du Pont de Nemours and Company (Corteva, Inc.)
• Inventors: Nilsson, Boo, Bailey, Phillip
• Primary Examiner(s): WILLIAMS, JOSEPH L
• Application Number:
  US10/404,323
• Publication Number:
  US 20030184222A1
• Time in Patent Office: 728 Days
• Field of Search: 313500-512, 445/24, 445/25
• US Class Current: 313/512
• CPC Class Codes: H05B 33/04 Sealing arrangements , e.g. against humidity
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

Methods for creating a protective seal suitable for protecting polymer-based electronic devices, including light emitting diodes and polymer emissive displays, are disclosed together with the protected devices. The protective seal includes one or more thin films of silicon nitride (SiN) or other inorganic dielectric applied at low temperature. One or more nonreactive metal layers may be present in the protective layer as well. Other embodiments are disclosed which include a protective cover over the protective layers. These protective layers provide encapsulation with sufficient protection from the atmosphere to enable shelf life and stress life for polymer electronic devices that are adequate for commercial applications.

Claims

1. In a light-emitting device comprising a layer of an active light-emitting polymer sandwiched between a cathode and an anode and a protective layer, the improvement of the protective layer consisting essentially of:

an encapsulating layer of low-temperature-applied inorganic material protecting the device against environmental attack, wherein the low-temperature-applied inorganic material comprises a nitride of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), carbon (C), silicon (Si), germanium (Ge), tin (Sn) or lead (Pb);

a low-temperature-applied coating comprising a non-reactive metal, wherein the low-temperature-applied coating is located between the device and the layer of inorganic material such that the low-temperature applied coating is next to the layer of inorganic material; and

a protective cover plate attached to the layer of inorganic material such that the layer of inorganic material is located between the low-temperature-applied coating and the protective cover plate.

2. The device of claim 1 wherein the inorganic material is a silicon-based material.

3. The device of claim 2 wherein the silicon-based material is.

4. The device of claim 2 wherein both the non-reactive metal and the inorganic material are applied at a temperature below 400°

C.

5. The device of claim 1 wherein the protective cover plate is attached with epoxy.

6. The device of claim 5 wherein the epoxy is around the perimeter of the cover plate.

7. The device of claim 6 additionally comprising an inert gas between the cover plate and the layer of inorganic material.

8. The device of claim 1 wherein the protective cover plate is attached with solder.

9. The device of claim 1 wherein the coating of inorganic material is in the form of a frame plate.

10. The device of claim 1 wherein the layer of inorganic material is applied at a temperature below 400°

C.

11. The device of claim 1 wherein the non-reactive metal is applied at a temperature below 400°

C.

12. A method for protecting a light-emitting device against water vapor and oxygen diffusion comprising an active light-emitting polymer sandwiched between a cathode and an anode consisting essentially of the steps of:

encapsulating said device with an encapsulating layer of low-temperature-applied inorganic material, wherein the low-temperature-applied inorganic material comprises a nitride of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), carbon (C), silicon (Si), germanium (Ge), tin (Sn) or lead (Pb);

depositing a layer of a low-temperature applied coating comprising a non-reactive metal onto the device, wherein the low-temperature-applied coating is located between the device and the layer of inorganic material such that the low-temperature applied coating is next to the layer of inorganic material; and

attaching a protective plate to the layer of inorganic material such the layer of inorganic material is located between the low-temperature-applied coating and the protective plate.

13. The method of claim 12 wherein the inorganic material is a silicon-based material.

14. The method of claim 13 wherein the silicon-based material is silicon-nitride.

15. The method of claim 12 wherein the protective cover plate is attached with epoxy.

16. The method of claim 15 wherein the epoxy is around the perimeter of the cover plate.

17. The method of claim 16 additionally comprising an inert gas between the cover plate and the layer of inorganic material.

18. The method of claim 12 wherein the protective cover plate is attached with solder.

19. The method of claim 12 wherein the coating of inorganic material is in the form of a frame plate.

20. The method of claim 12 wherein the layer of inorganic material is applied at a temperature below 400°

C.

21. The method of claim 12 wherein the non-reactive metal is applied at a temperature below 400°

C.

22. The method of claim 12 wherein both the non-reactive metal and the inorganic material are applied at a temperature below 400°

C.