Compound semiconductor switching device for high frequency switching

• US 6,873,828 B2
• Filed: 05/15/2001
• Issued: 03/29/2005
• Est. Priority Date: 05/15/2000
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Hirata, Koichi, Higashino, Takayoshi, Asano, Tetsuro
• Primary Examiner(s): Chin, Vivian
• Assistant Examiner(s): PHU, SANH D
• Application Number:
  US09/855,030
• Publication Number:
  US 20020024375A1
• Time in Patent Office: 1,414 Days
• Field of Search: 455/73, 455/78, 455/79, 455/83, 333/100, 333/101, 327/365, 327/427
• US Class Current: 455/78
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 29/812 with a Schottky gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence; with Schottky contact on top of heterojunction gate H01L29/802
• CPC Class Codes: H03K 17/04106 in field-effect transistor switches H03K17/0412, H03K17/0416 take precedence
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

A compound semiconductor switching device is based on a designing guideline that isolation should be assured by reducing the gate width of switching FET, thereby reducing the capacitance of the FET. Proper isolation between the two signal passes IS obtained with a FET gate width of about 700 μm or smaller at a signal frequency of about 2.4 GHz or higher, without employing a shunt FET.

Claims

1. A compound semiconductor switching device comprising:

a first FET comprising signal electrodes and a gate electrode formed on a surface of a channel layer of said first FET, the signal electrodes of the first FET not being connected to each other;

a second FET comprising signal electrodes and a gate electrode formed on a surface of a channel layer of said second FET, the signal electrodes of the second FET not being connected to each other;

a common input terminal, said common input terminal being formed by connecting one of the signal electrodes of the first FET and one of the signal electrodes of the second FET;

a first output terminal, said first output terminal being the signal electrode of the first FET not used as the common input terminal; and

a second output terminal, said second output terminal being the signal electrode of the second FET not used as the common input terminal;

wherein the gate electrodes of the first and second FET'"'"'s are provided with control signals such that only one FET allows conduction of electric current so that a signal pass is formed between the common input terminal and either the first output terminal or the second output terminal; and

wherein the first FET and the second FET have gate widths of about 700 μ

m or less and are not connected to a shunt FET.

2. A compound semiconductor switching device according to claim 1, wherein an input signal of about 2.4 GHz or higher is applied to the common input terminal, and the first FET and the second FET have gate widths of about 600 μ

m or less.

3. A compound semiconductor switching device according to claim 1, further comprising a GaAs substrate used as a semi-insulating substrate for forming the channel layer on a surface thereof.

4. A compound semiconductor switching device according to claim 1, wherein the gate electrodes and the channel layers of the first FET and the second FET form respective Schottky contacts, and wherein the signal electrodes and the channel layers of the first FET and the second FET form respective ohmic contacts.

5. A compound semiconductor switching device according to claim 1, wherein the signal electrodes of the first FET are a source electrode and a drain electrode of the first FET, and the signal electrodes of the second FET are a source electrode and a drain electrode of the second FET.

6. A compound semiconductor switching device according to claim 1, wherein an input signal of about 2.4 GHz or higher is applied to the common input terminal, and the gates widths of the first FET and the second FET are about 600 μ

m or less;

wherein a GaAs substrate is used as a semi-insulating substrate for forming the channel layer on a surface thereof; and

wherein the signal electrodes of the first FET are a source electrode and a drain electrode of the first FET, and the signal electrodes of the second FET are a source electrode and a drain electrode of the second FET.

7. A compound semiconductor switching device according to claim 1, wherein the common input terminal is configured to receive an input signal between about 2.4 GHz and about 3.0 GHz.

8. A compound semiconductor switching device according to claim 1, wherein the gate widths of the first FET and the second FET are greater than or equal to 300 μ

m.

9. A mobile communication device, comprising:

an antenna for receiving and sending an electromagnetic signal;

a signal receiving circuit for receiving the signal through the antenna;

a signal transmitting circuit for sending the signal through the antenna; and

at least one compound semiconductor switching device, said compound semiconductor switching devices comprising;

a first FET comprising signal electrodes and a gate electrode formed on a surface of a channel layer of said first FET, the signal electrodes of the first FET not being connected to each other;

a second FET comprising signal electrodes and a gate electrode formed on a surface of a channel layer of said second FET, the signal electrodes of the second FET not being connected to each other;

a common input terminal, said common input terminal being formed by connecting one of the signal electrodes of the first FET and one of the signal electrodes of the second FET;

a first output terminal, said first output terminal being the signal electrode of the first FET not used as the common input terminal; and

a second output terminal, said second output terminal being the signal electrode of the second FET not used as the common input terminal;

the gate electrodes of the first and second FET'"'"'s being provided with control signals such that only one FET allows conduction of electric current so that a signal pass is formed between the common input terminal and either the first output terminal or the second output terminal; and

the first FET and the second FET having gate widths of about 700 μ

m or less and not being connected to a shunt FET;

wherein the compound semiconductor devices are configured within the mobile communication device for switching between the signal receiving circuit and the signal transmitting circuit.

10. A mobile communication device according to claim 9, further comprising a second antenna, an antenna switch comprising one of said compound semiconductor switching devices for changing between the antenna and the second antenna for better reception or transmission of the signal, a filter switch comprising one of said compound semiconductor switching devices for changing between a filter for receiving the signal or for transmitting the signal and a band switch comprising one of said compound semiconductor switching devices for changing an IF band for receiving the signal or for transmitting the signal.

11. A mobile communication device according to claim 9, further comprising specialized circuitry for a mobile telephone, a Bluetooth device or a wireless LAN.