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Compound semiconductor switching device for high frequency switching

  • US 6,873,828 B2
  • Filed: 05/15/2001
  • Issued: 03/29/2005
  • Est. Priority Date: 05/15/2000
  • Status: Expired due to Term
First Claim
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1. A compound semiconductor switching device comprising:

  • a first FET comprising signal electrodes and a gate electrode formed on a surface of a channel layer of said first FET, the signal electrodes of the first FET not being connected to each other;

    a second FET comprising signal electrodes and a gate electrode formed on a surface of a channel layer of said second FET, the signal electrodes of the second FET not being connected to each other;

    a common input terminal, said common input terminal being formed by connecting one of the signal electrodes of the first FET and one of the signal electrodes of the second FET;

    a first output terminal, said first output terminal being the signal electrode of the first FET not used as the common input terminal; and

    a second output terminal, said second output terminal being the signal electrode of the second FET not used as the common input terminal;

    wherein the gate electrodes of the first and second FET'"'"'s are provided with control signals such that only one FET allows conduction of electric current so that a signal pass is formed between the common input terminal and either the first output terminal or the second output terminal; and

    wherein the first FET and the second FET have gate widths of about 700 μ

    m or less and are not connected to a shunt FET.

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