Pressure sensor

• US 6,874,367 B2
• Filed: 03/10/2003
• Issued: 04/05/2005
• Est. Priority Date: 05/01/2002
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: SensoNor ASA (Infineon Technologies AG)
• Inventors: Jakobsen, Henrik
• Primary Examiner(s): Lefkowitz, Edward
• Assistant Examiner(s): JENKINS, JERMAINE L
• Application Number:
  US10/385,283
• Publication Number:
  US 20030205090A1
• Time in Patent Office: 757 Days
• Field of Search: 73700-756, 361/283.1, 361/283.4, 361/283.2, 361/283.3
• US Class Current: 73/718
• CPC Class Codes: G01L 19/069 Protection against electromagnetic or electrostatic interferences
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A capacitive-type pressure sensor comprising a glass plate having an electrode formed thereon. A diaphragm is formed from a semiconductor material and bonded to the glass substrate to define an enclosed cavity containing at least a portion of the electrode, to thereby define a capacitive element, through which, in use, an electrical signal may be passed to determine a capacitance thereof which is indicative of the pressure to be determined.

Claims

1. A capacitive-type pressure sensor comprising:

a glass substrate having an electrode formed thereon;

a diaphragm formed from a semiconductor material and bonded to the glass substrate to define an enclosed cavity containing at least a portion of the electrode, to thereby define a capacitive element, through which, in use, an electrical signal is passed to determine a capacitance thereof which is indicative of the pressure to be determined;

wherein press contacts are located external to the cavity to allow for interaction with devices interconnected with the press contacts; and

wherein an electrical connector is provided tbr each of the electrode and the diaphragm, wherein the electrical connector for the electrode is provided by doped conductors being formed within the semiconductor material.

2. A pressure sensor according to claim 1, wherein the diaphragm is formed by micro-machining the semiconductor material.

3. A pressure sensor according to claim 1, wherein the semiconductor material is silicon.

4. A pressure sensor according to claim 1, wherein the semiconductor material comprises a rigid support rim.

5. A pressure sensor according to claim 1, wherein the electrical connector for the diaphragm is provided by the semiconductor material.

6. A pressure sensor according to claim 1, wherein a seal between the glass substrate and the semiconductor material is provided by anodic bonding.

7. A pressure sensor according to claim 1, wherein a second glass substrate with a hole forming a pressure inlet port, in use, is bonded to the semiconductor material such that a layer of semiconductor material is sandwiched between two layers of glass substrate.

8. A pressure sensor according to claim 1, wherein the diaphragm includes a stiff centre boss.

9. A pressure sensor system comprising at least two capacitive-type pressure sensors according to claim 1.

10. A pressure sensor system according to claim 9, wherein the diaphragm of each of the pressure sensors, is formed from a single section of semiconductor material.

11. A pressure sensor system according to claim 9, wherein each of the pressure sensors shares the same glass plate.

12. A pressure sensor system according to claim 9, wherein each pressure sensor is provided with a pressure inlet port, such that the system is a differential pressure sensor device.

13. A pressure sensor system according to claim 9, wherein a first one of the pressure sensors is not provided with a pressure inlet port, such that the first pressure sensor is used as a reference sensor.