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Semiconductor device and fabrication method of the same

  • US 6,875,628 B1
  • Filed: 03/06/1997
  • Issued: 04/05/2005
  • Est. Priority Date: 05/26/1993
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming a semiconductor film over a substrate;

    disposing a crystallizing promoting material in contact with a selected portion of the semiconductor film;

    crystallizing the semiconductor film by heating wherein a crystal grows from said selected portion of the semiconductor film to a second portion of the semiconductor film adjacent to said selected portion;

    patterning the crystallized semiconductor film to form an active layer wherein said active layer includes at least a first region and a second region where said first region includes at least a part of the selected portion of the semiconductor film and said second region includes at least a part of the second portion of the semiconductor film;

    forming a gate insulating film over the active layer;

    forming a gate electrode over the gate insulating film;

    forming an insulating film over the gate insulating film; and

    forming a wiring over the insulating film, wherein the wiring is in contact with said first region of the active layer.

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