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Method to control the interfacial layer for deposition of high dielectric constant films

  • US 6,875,677 B1
  • Filed: 09/30/2003
  • Issued: 04/05/2005
  • Est. Priority Date: 09/30/2003
  • Status: Expired due to Fees
First Claim
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1. A method of forming a high-k dielectric film on a substrate comprising the steps of:

  • a) providing a hydrogen passivated surface on a semiconductor substrate within an atomic layer deposition chamber;

    b) forming an interfacial layer by heating the substrate to a temperature below 200 degrees Celsius and introducing anhydrous hafnium nitrate into the chamber without introducing a hydrating gas, or an additional oxidizing gas, during the formation of the interfacial layer; and

    c) forming a high-k film overlying the interfacial layer.

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