Semiconductor integrated circuit
First Claim
Patent Images
1. A liquid crystal display device comprising:
- an active matrix circuit and a driving circuit formed over a substrate; and
an inverter circuit formed in the driving circuit, the inverter circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channer and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, and wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions.
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Abstract
The absolute value of the threshold voltage of a P-channel TFT is reduced by making its channel length shorter than that of an N-channel TFT by at least 20% to thereby approximately equalize the threshold voltage absolute values of those TFTs.
69 Citations
52 Claims
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1. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an inverter circuit formed in the driving circuit, the inverter circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channer and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, and wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (2, 3, 4)
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5. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an inverter circuit formed in the driving circuit, the inverter circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor by at least 20%, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (6, 7, 8)
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9. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an inverter circuit formed in the driving circuit, the inverter circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein a channel length of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (10, 11, 12)
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13. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an inverter circuit formed in the driving circuit, the inverter circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (14, 15, 16)
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17. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an analog switching circuit formed in the driving circuit, the analog switching circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, and wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (18, 19, 20, 21)
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22. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an analog switching circuit formed in the driving circuit, the analog switching circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor by at least 20%, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (23, 24, 25, 26)
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27. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an analog switching circuit formed in the driving circuit, the analog switching circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein a channel length of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (28, 29, 30, 31)
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32. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
an analog switching circuit formed in the driving circuit, the analog switching circuit having at least one pair of an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (33, 34, 35, 36)
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37. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
at least one CMOS circuit formed in the driving circuit, the CMOS circuit comprising an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, and wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (38, 39, 40)
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41. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
at least one CMOS circuit formed in the driving circuit, the CMOS circuit comprising an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor by at least 20%, wherein the semiconductor aver of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (42, 43, 44)
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45. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
at least one CMOS circuit formed in the driving circuit, the CMOS circuit comprising an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein a channel length of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (46, 47, 48)
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49. A liquid crystal display device comprising:
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an active matrix circuit and a driving circuit formed over a substrate; and
at least one CMOS circuit formed in the driving circuit, the CMOS circuit comprising an N-channel thin film transistor and a P-channel thin film transistor electrically connected to the N-channel thin film transistor, wherein each of the N-channel and P-channel thin film transistors comprises a semiconductor layer having a channel region interposed between source and drain regions, and a gate electrode adjacent to the channel region with a gate insulating film interposed therebetween, wherein a gate width of the P-channel thin film transistor is shorter than that of the N-channel thin film transistor, wherein the semiconductor layer of the N-channel thin film transistor further comprises a lightly-doped drain region between the channel region and one of the source and drain regions. - View Dependent Claims (50, 51, 52)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTakemura, Yasuhiko, Koyama, Jun
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Primary Examiner(s)Cao, Phat X.
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Assistant Examiner(s)Doan, Theresa T.
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Application NumberUS10/298,001Publication NumberTime in Patent Office869 DaysField of Search257350-351, 257/59, 257/57, 257 66- 67, 257/69, 257/72US Class Current257/66CPC Class CodesH01L 21/8238 Complementary field-effect ...H01L 27/0922 Combination of complementar...H01L 27/1214 comprising a plurality of T...H01L 27/1222 with a particular compositi...H01L 29/42384 for thin film field effect ...H01L 29/4908 for thin film semiconductor...
