Radiation source
First Claim
1. A radiation source comprising a first active layer coupled to a second active layer, wherein the first and second active layers are separate, the first active layer produces primary radiation of frequency vi by appropriate stimulation, and the primary radiation is converted by the second active layer to secondary radiation of frequency v2 for subsequent output and wherein coupling occurs by an intermediary layer disposed between the first active layer and the second active layer, the intermediary layer comprising a noncrystalline material.
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Accused Products
Abstract
A radiation source (30) is provided comprising a first active layer (42) coupled to a second active layer (62), wherein the first active layer (42) produces primary radiation of frequency v1 by appropriate stimulation, and the primary radiation is converted by the second active layer (62) to secondary radiation of frequency v2 for subsequent output. The coupling between the first and second active layers is achieved by an intermediary layer (58) disposed between the first active layer (42) and the second active layer (62). The radiation source (30) further comprises a p-n junction (48) incorporated in the first active layer (42), where injection of electrical carriers into the first active layer (42) from the p-n junction stimulates the first active layer (42) to emit the primary radiation.
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Citations
49 Claims
- 1. A radiation source comprising a first active layer coupled to a second active layer, wherein the first and second active layers are separate, the first active layer produces primary radiation of frequency vi by appropriate stimulation, and the primary radiation is converted by the second active layer to secondary radiation of frequency v2 for subsequent output and wherein coupling occurs by an intermediary layer disposed between the first active layer and the second active layer, the intermediary layer comprising a noncrystalline material.
- 29. An infrared radiation source comprising a first active semiconductor layer coupled to a second active semiconductor layer, wherein the first active layer produces primary radiation of frequency vi by appropriate stimultaion, and the primary radiation is converted by the second active layer to secondary radiation of frequency v2 for subsequent output, and an intermediary layer disposed between the first semiconductor layer and the second semiconductor layer.
Specification