Mount for semiconductor light emitting device

• US 6,876,008 B2
• Filed: 07/31/2003
• Issued: 04/05/2005
• Est. Priority Date: 07/31/2003
• Status: Expired due to Term

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Martin, Paul S., Bhat, Jerome C., Elpedes, Cresente S., Rudaz, Serge L.
• Primary Examiner(s): Ngô , Ngân V.
• Application Number:
  US10/632,719
• Publication Number:
  US 20050023548A1
• Time in Patent Office: 614 Days
• Field of Search: 257/81, 257/79, 257/84, 257/93, 257/98, 257/99
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01087 Francium [Fr]
• CPC Class Codes: H01L 2924/0132 Binary Alloys
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/0133 Ternary Alloys
• CPC Class Codes: H01L 2924/0134 Quaternary Alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 : Heat extraction or cooling elements
• CPC Class Codes: H05K 3/3442 : having edge contacts, e.g. leadless chip capacitors, chip carriers

Abstract

A device includes a submount, and a semiconductor light emitting device mounted on first and second conductive regions on a first side of the submount in a flip chip architecture configuration. The submount has third and fourth conductive regions on a second side of the submount. The third and fourth conductive regions may be used to solder the submount to structure such as a board, without the use of wire bonds. The first and third conductive regions are electrically connected by a first conductive layer and the second and fourth conductive regions are electrically connected by a second conductive layer. The first and second conductive layers may be disposed on the outside of the submount or within the submount.

Claims

1. A device comprising:

a semiconductor light emitting device comprising;

an n-type layer;

a p-type layer;

an active region interposing the n-type layer and the p-type layer;

an n-contact electrically connected to the n-type layer; and

a p-contact electrically connected to the p-type layer;

wherein the n- and p-contacts are formed on a same side of the semiconductor light emitting device; and

a submount comprising;

first and second conductive regions on a first side of the submount;

third and fourth conductive regions on a second side of the submount;

a semiconductor region; and

an insulating region, wherein the n- and p-contacts of the semiconductor light emitting device are electrically and physically connected to the first and second conductive regions of the submount in a flip chip configuration.

2. The device of claim 1 wherein the first and second conductive regions comprise a material selected from the group consisting of gold, silver, nickel, platinum, and copper.

3. The device of claim 1 wherein the first and third conductive regions are electrically connected by a first conductive layer and the second and fourth conductive regions are electrically connected by a second conductive layer.

4. The device of claim 3 wherein the first and second conductive layers are metal layers.

5. The device of claim 3 wherein the first and second conductive layers are highly doped semiconductor layers.

6. The device of claim 3 wherein the first and second conductive layers are disposed on the outside of the submount.

7. The device of claim 3 wherein the first and second conductive layers are disposed within the submount.

8. The device of claim 7 wherein the first and second conductive layers each at least partially surround a region of semiconductor material within the submount.

9. The device of claim 7 wherein the first and second conductive layers comprise copper.

10. The device of claim 1 wherein the semiconductor light emitting device is mounted in a well formed on the submount.

11. The device of claim 10 wherein at least a portion of the sides and bottom of the well are reflective to light emitted by the semiconductor light emitting device.

12. The device of claim 10 wherein the well is at least partially filled with an optical coupling material.

13. The device of claim 1 further comprising circuitry formed in the semiconductor region.

14. The device of claim 1 wherein the insulating region comprises glass.

15. The device of claim 1 further comprising:

a board; and

a solder joint connecting the board to the third and fourth conductive regions.

16. The device of claim 1 wherein the semiconductor light emitting device has an area greater than about 400×

400 μ

m².

17. The device of claim 1 wherein the semiconductor light emitting device is capable of operating at a current density of at least 50 A/cm².

18. The device of claim 1 wherein the semiconductor light emitting device has an area greater than or equal to about 1×

1 mm².

19. The device of claim 1 wherein the semiconductor light emitting device is capable of operating at an electrical power consumption greater than or equal to 1 W.

20. The device of claim 1 wherein a surface of the submount including the first and second conductive regions is free of wire-bond pads.

21. The device of claim 1 further comprising a luminescent material layer overlying a surface of the semiconductor light emitting device opposite the submount.

22. The device of claim 21 wherein the luminescent material layer overlies a side surface of the semiconductor light emitting device.

23. The device of claim 1 wherein the first, second, third, and fourth conductive regions each comprise solderable layers.

24. The device of claim 1 wherein the semiconductor light emitting device has an area less than about 400×

400 μ

m².

25. The device of claim 1 wherein the semiconductor light emitting device is capable of operating at a current between about 5 mA and about 100 mA.