High-frequency switch, and electronic device using the same
First Claim
1. A high-frequency switch, comprising:
- a substrate having thereon a main line electrode provided between two terminals, said main line electrode having a pair of opposed side edges;
a stub line electrode having a width direction and a longitudinal direction, with one end thereof connected to a side edge of said main line electrode and the other end thereof grounded; and
a ground electrode provided adjacent to said stub line electrode in the width direction thereof;
wherein said substrate has a semiconductor activation layer which extends below at least part of said stub line electrode and said ground electrode, between at least one side edge of said stub line electrode and said ground electrode;
and wherein a gate electrode which extends in the longitudinal direction of said stub line electrode is provided on said semiconductor activation layer between said stub line electrode and said ground electrode, thereby forming an FET structure.
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Accused Products
Abstract
A high-frequency switch comprises: a substrate; a main line electrode provided between two terminals; a stub line electrode with one end thereof connected to the side edge of the main line electrode and the other end thereof grounded; and a ground electrode provided adjacent to the stub line electrode in the width direction thereof; wherein the substrate has a semiconductor activation layer which extends to below the stub line electrode and the ground electrode between at least one side edge of the stub line electrode and the ground electrode; and wherein a gate electrode which extends in the longitudinal direction of the stub line electrode is provided on the semiconductor activation layer between the stub line electrode and the ground electrode, thereby forming an FET structure, thus providing a high-frequency switch and electronic device therewith, capable of using high frequencies, having reduced insertion loss, and high signal cut-off capabilities.
132 Citations
16 Claims
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1. A high-frequency switch, comprising:
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a substrate having thereon a main line electrode provided between two terminals, said main line electrode having a pair of opposed side edges;
a stub line electrode having a width direction and a longitudinal direction, with one end thereof connected to a side edge of said main line electrode and the other end thereof grounded; and
a ground electrode provided adjacent to said stub line electrode in the width direction thereof;
wherein said substrate has a semiconductor activation layer which extends below at least part of said stub line electrode and said ground electrode, between at least one side edge of said stub line electrode and said ground electrode;
and wherein a gate electrode which extends in the longitudinal direction of said stub line electrode is provided on said semiconductor activation layer between said stub line electrode and said ground electrode, thereby forming an FET structure. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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3. A high-frequency switch, comprising:
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a substrate having thereon a main line electrode provided between two terminals, said main line electrode having a pair of opposed side edges;
a stub line electrode having a width direction and a pair of opposed side edges extending in a longitudinal direction, with one end thereof connected to a side edge of said main line electrode and the other end thereof grounded; and
a ground electrode provided adjacent to said stub line electrode in the width direction thereof;
wherein said substrate has a semiconductor activation layer which extends below at least part of said stub line electrode and said ground electrode, between both side edges of said stub line electrode and said ground electrode;
wherein gate electrodes which extend in the longitudinal direction of said stub line electrode are provided on said semiconductor activation layer between said stub line electrode and said ground electrode, thereby forming FET structures;
whereby said FET structures are formed at both side edges of said stub line electrode.
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Specification