Thin film transistor for supplying power to element to be driven
First Claim
Patent Images
1. A semiconductor device comprising:
- a switching thin film transistor which operates by receiving a gate signal at its gate and for reading a data signal; and
an element driving thin film transistor provided between a driving power supply and an element to be driven, for controlling the power supplied from said driving power supply to said element to be driven based on a data signal supplied from said switching thin film transistor;
wherein a compensation thin film transistor having an opposite conductive characteristic with respect to said element driving thin film transistor is provided between said driving power supply and said element driving thin film transistor, wherein a gate and either a source or a drain of said compensation thin film transistor are connected, and said compensation thin film transistor is connected between said driving power supply and said element driving thin film transistor.
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Abstract
An EL element (50) having an organic emissive layer or the like between the anode and cathode is used as an element to be driven, and an element driving TFT (20) for controlling the current supplied to the EL element (50) and a compensation thin film transistor (30) having an opposite conductive characteristic as the element driving TFT (20) are provided between the EL element (50) and the power supply line VL. With this structure, variation in the current supplied to each EL element (50) is reduced.
243 Citations
12 Claims
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1. A semiconductor device comprising:
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a switching thin film transistor which operates by receiving a gate signal at its gate and for reading a data signal; and
an element driving thin film transistor provided between a driving power supply and an element to be driven, for controlling the power supplied from said driving power supply to said element to be driven based on a data signal supplied from said switching thin film transistor;
wherein a compensation thin film transistor having an opposite conductive characteristic with respect to said element driving thin film transistor is provided between said driving power supply and said element driving thin film transistor, wherein a gate and either a source or a drain of said compensation thin film transistor are connected, and said compensation thin film transistor is connected between said driving power supply and said element driving thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a switching thin film transistor which operates by receiving a gate signal at its gate and for reading a data signal; and
an element driving thin film transistor provided between a driving power supply and an element to be driven, for controlling the power supplied from said driving power supply to said element to be driven based on a data signal supplied from said switching thin film transistor;
wherein a compensation thin film transistor having an opposite conductive characteristic with respect to said element driving thin film transistor is provided between said driving power supply and said element driving thin film transistor, wherein said element driving thin film transistor is formed so that its channel length direction is along the scan direction of a line pulse laser for annealing the channel region of the transistor. - View Dependent Claims (12)
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Specification