Lid assembly for a processing system to facilitate sequential deposition techniques

• US 6,878,206 B2
• Filed: 12/12/2001
• Issued: 04/12/2005
• Est. Priority Date: 07/16/2001
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Tzu, Gwo-Chuan, Umotoy, Salvador P.
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US10/016,300
• Publication Number:
  US 20030010451A1
• Time in Patent Office: 1,217 Days
• Field of Search: 118/715, 118/728, 118/50, 156/345.29, 156/345.33, 156/345.34, 156/345.35, 156/345.36, 156/345.26, 156/345.51, 137/262, 137/263, 137/264, 137/454.2, 137/560, 137/561.R, 137/561.A, 137/571, 137/572, 137/573, 137/574, 137/575, 137/576, 137/590, 137594-596, 137/599.01, 13759905-59907, 137/602, 141/285, 141/286, 141/37, 141 44- 47, 141/54, 141301-302, 141/367
• US Class Current: 118/715
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45538 Plasma being used continuously during the ALD cycle
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence

Abstract

A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having a gas manifold mounted on a first side and a baffle plate mounted on a second side. The gas manifold is configured to deliver a plurality of gases to a plenum defined between the baffle plate and the lid. The gases are mixed within a recess formed in the baffle plate before exiting into the processing system through a singular passage.

Claims

1. A lid assembly for a semiconductor processing system, the lid assembly comprising:

a lid having first and second opposed surfaces;

a plurality of controllable flow channels extending from the first and second opposed surfaces; and

a gas control system disposed on the first surface and operably opening and closing the channels, wherein the gas control system comprises;

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels; and

a reservoir positioned on the lid and fluidly connected to the gas manifold.

2. The lid assembly of claim 1, wherein the gas manifold comprises:

an upper surface and a lower surface;

a first channel, a second channel and a third channel each extending through the gas manifold and exiting the lower surface; and

a fourth channel extending from the upper surface and coupling to the third channel.

3. The lid assembly of claim 2, wherein the gas manifold further comprises:

a conduit disposed therein adapted to flow a heat transfer fluid therethrough.

4. The lid assembly of claim 2, wherein the gas control system further comprises:

a remote plasma source fluidly coupled to the fourth channel.

5. A lid assembly for a semiconductor processing system, the lid assembly comprising:

a lid having first and second opposed surfaces, the first and second opposed surfaces having a first inlet channel, a second inlet channel and a third inlet channel disposed therethrough;

a gas manifold coupled to the first surface of the lid, the gas manifold comprising;

a body having an upper surface and lower surface;

a first channel, a second channel, and a third channel each extending through the gas manifold to the lower surface;

a valve coupled to the gas manifold; and

a gas reservoir positioned on the lid and fluidly connected to the gas manifold.

6. The lid assembly of claim 5, wherein the gas manifold further comprises a fourth channel coupled between the upper surface and the third channel.

7. The lid assembly of claim 6 further comprising:

a remote plasma source fluidly coupled to the fourth channel.

8. The lid assembly of claim 5 further comprising:

a thermal conditioning channel disposed in the gas manifold fluidly coupling the valve and the gas reservoir.

9. A lid assembly for a semiconductor processing system, the lid assembly comprising:

a lid having first and second opposed surfaces, the first and second opposed surfaces having a plurality of inlet channels disposed therethrough;

a valve;

a gas manifold coupled to the first surface of the lid, the gas manifold comprising;

a body having an upper surface and lower surface;

a plurality of gas channels extending through the gas manifold to the lower surface; and

a thermal conditioning channel disposed in the gas manifold and fluidly coupled to at least one of the plurality of gas channels by the valve; and

a gas reservoir fluidly positioned on the lid, connected to the gas manifold, and fluidly coupled to the valve by the thermal conditioning channel.

10. The lid assembly of claim 9, wherein the gas manifold further comprises a cleaning agent supply channel coupled between the upper surface and one of the plurality of channels.

11. The lid assembly of claim 10 further comprising:

a cleaning source fluidly coupled to the cleaning agent supply channel.

12. The lid assembly of claim 9 further comprising:

a baffle plate having a first side and a second side, the first side coupled to the second surface of the lid and having a recess formed therein, the recess defining a plenum with the second surface of the lid and fluidly communicating with the plurality of channels via the inlet channels disposed in the lid, the baffle plate having a center passage disposed therethrough providing a singular passageway between the plenum and the second side of the baffle plate.

13. The lid assembly of claim 12, wherein the second surface of the lid further comprises a plurality of recesses formed therein that reduce the contact area with the first side of the baffle plate.

14. The lid assembly of claim 12, wherein the first side of the baffle plate further comprises a plurality of bosses that maintain the first side of the baffle plate in a spaced-apart relation with the second surface of the lid.

15. The lid assembly of claim 14, wherein at least one of the bosses has a mounting hole disposed therethrough.

16. The lid assembly of claim 12, wherein the first side of the baffle plate further comprises a ring circumscribing the recess that maintains the first side of the baffle plate in a spaced-apart relation with the second surface of the lid.

17. The lid assembly of claim 12, wherein the first side of the baffle plate further comprises a ring circumscribing the recess and a plurality of bosses disposed radially outward of the ring, the ring and bosses maintaining the first side of the baffle plate in a spaced-apart relation with the second surface of the lid.

18. The lid assembly of claim 17, wherein the ring and bosses extend from the first side of the baffle plate to a common elevation.

19. A lid assembly for a semiconductor processing system, comprising:

a lid having a first surface opposed to a second surface;

at least one controllable flow channel extending from the first surface through the second surface; and

a gas control system disposed on the first surface and operably opening and closing the at least one controllable flow channel, wherein the gas control system comprises;

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold adapted to control a flow through the at least one controllable flow channel; and

at least one precursor reservoir fluidly connected between at least one precursor source and the gas manifold.

20. The lid assembly of claim 19, wherein a remote plasma source is fluidly coupled to the at least one controllable flow channel.

21. A lid assembly for a semiconductor processing system, comprising:

a lid having a first surface opposed to a second surface; and

a gas control system disposed on the first surface and operably opening and closing at least one controllable flow channel, wherein the gas control system comprises;

a gas manifold disposed on the lid;

at least one valve coupled to the gas manifold and adapted to control a flow through the at least one controllable flow channel;

at least one precursor reservoir fluidly connected to the gas manifold; and

at least one precursor source fluidly connected to the at least one precursor reservoir.

22. The lid assembly of claim 21, wherein the at least one controllable flow channel extends from the first surface through the second surface.

23. The lid assembly of claim 21, wherein a remote plasma source is fluidly coupled to the at least one controllable flow channel.