Radiation-emitting semiconductor element and method for producing the same

• US 6,878,563 B2
• Filed: 03/16/2001
• Issued: 04/12/2005
• Est. Priority Date: 04/26/2000
• Status: Expired due to Term

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Hahn, Berthold, Härle, Volker, Eisert, Dominik, Lugauer, Hans-Jürgen, Mundbrod-Vangerow, Manfred, Bader, Stefan
• Primary Examiner(s): Kang, Donghee
• Application Number:
  US10/239,106
• Publication Number:
  US 20040056254A1
• Time in Patent Office: 1,488 Days
• Field of Search: 438/22, 438 25- 27, 438/29, 257 94- 98
• US Class Current: 438/22
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).

The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

Claims

1. Method for producing a radiation-emitting semiconductor component whose semiconductor body is made up of a stack of different III-V nitride semiconductor layers and that has a first principal surface and a second principal surface, with at least a portion of the radiation produced being emitted through the first principal surface and with the second principal surface having a reflector, characterized by the steps

application of an SiC interlayer on a substrate

application of a plurality of different III-V nitride semiconductor layers on the interlayer

application of the reflector on the second principal surface of the semiconductor body

detachment of the substrate including the interlayer.

2. Method pursuant to claim 1, characterized by the fact that an Si substrate is used as the substrate.

3. Method pursuant to claim 1, characterized by the fact that the reflector is made by applying a layer of metal, which serves for contacting the semiconductor body at the same time.

4. Method pursuant to claim 3, wherein the reflector comprises a transparent first layer applied to the second principal surface and a second reflecting layer.

5. Method for producing a radiation-emitting semiconductor component whose semiconductor body is made up of a stack of different III-V nitride semiconductor layers and that has a first principal surface and a second principal surface, with at least a portion of the radiation produced being emitted through the first principal surface and with the second principal surface having a reflector, characterized by the steps

application of an interlayer on a substrate

application of a plurality of different III-V nitride semiconductor layers on the interlayer

application of the reflector on the second principal surface of the semiconductor body

detachment of the substrate including the interlayer,

wherein the interlayer is applied by a wafer-bonding method.

6. Method for producing a radiation-emitting semiconductor component whose semiconductor body is made up of a stack of different III-V nitride semiconductor layers and that has a first principal surface and a second principal surface, with at least a portion of the radiation produced being emitted through the first principal surface and with the second principal surface having a reflector, characterized by the steps

application of an interlayer on a substrate

application of a plurality of different III-V nitride semiconductor layers on the interlayer

application of the reflector on the second principal surface of the semiconductor body

detachment of the substrate including the interlayer,

wherein the semiconductor body is roughened.

7. Method pursuant to claim 6, characterized by the fact that the semiconductor body is roughened by etching.

8. Method pursuant to claim 6, characterized by the fact that the semiconductor body is roughened by a sand-blasting method.