Ceramic substrate and process for producing the same
First Claim
1. A ceramic heater comprising a ceramic substrate and a conductor layer formed inside said ceramic substrate, whereina section of an edge of the conductor layer has a peaked shape in a cross-section oriented normal to the plane of the conductor layer, and the thickness of the ceramic substrate is 25 mm or less.
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Abstract
It is a an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, exellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.
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Citations
15 Claims
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1. A ceramic heater comprising a ceramic substrate and a conductor layer formed inside said ceramic substrate, wherein
a section of an edge of the conductor layer has a peaked shape in a cross-section oriented normal to the plane of the conductor layer, and the thickness of the ceramic substrate is 25 mm or less.
Specification