Low volt/high volt transistor

• US 6,879,007 B2
• Filed: 08/08/2002
• Issued: 04/12/2005
• Est. Priority Date: 08/08/2002
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Takamura, Yoshiji
• Primary Examiner(s): Eckert, George
• Assistant Examiner(s): Ortiz, Edgardo
• Application Number:
  US10/214,148
• Publication Number:
  US 20040026750A1
• Time in Patent Office: 978 Days
• Field of Search: 257/389, 257/390, 257/391, 257/392, 257/395, 438/217, 438/276, 438/289, 438/291
• US Class Current: 257/392
• CPC Class Codes: H01L 21/823418 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823462 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

Abstract

A semiconductor device has at least one high-voltage and low-voltage transistor on a single substrate. The reliability of the high-voltage transistor is enhanced by performing a LDD implantation in only the high-voltage transistor prior to conducting an oxidation process to protect the substrate and gate electrode. After the oxidation process is performed, the low-voltage transistor is subjected to an LDD implantation process. The resultant semiconductor device provides a high-voltage transistor having a deeper LDD region junction depth than the low-voltage transistor, ensuring reliability and performance.

Claims

1. A semiconductor device, comprising:

a substrate; and

at least two transistors each having different threshold voltages provided over the substrate, wherein each transistor includes LDD regions and a gate electrode, at least one of said transistors having a higher threshold voltage and at least one of said transistors having a lower threshold voltage, and the LDD regions of the at least one highest threshold voltage transistor have a deeper junction depth than the LDD regions of the at least one lowest threshold voltage transistor.

2. The semiconductor device of claim 1, wherein each transistor further includes a gate insulating film, source/drain regions and a channel located directly under the gate electrode.

3. The semiconductor device of claim 2, wherein the gate insulating film of the transistor having the higher operation voltage is thicker than the gate insulating film of the transistor having a lower operation voltage.

4. The semiconductor device of claim 1, wherein thermal diffusion caused by oxidation ensures a smooth transition between the LDD region and adjacent n-impurity or p-impurity regions of the highest threshold voltage transistor.

5. The semiconductor device of claim 1, wherein said at least two transistors further comprise PMOS and NMOS transistors, at least one high-voltage and low-voltage PMOS transistor, and at least one high-voltage and low-voltage NNOS transistor.

6. The semiconductor device of claim 5, wherein threshold voltage values of the transistors are adjusted by using a mask to implant p impurities into an NMOS region of the NMOS transistors, and n impurities into a PMOS region of PMOS transistors so as to form a channel in each transistor.

7. The semiconductor device of claim 6, wherein the p impurities comprise at least one of boron or indium and the n impurities comprise at least one of phosphorous, arsenic, or antimony.

8. The semiconductor device of claim 1, wherein the gate electrodes of each transistor comprise poly-Si or amorphous-Si.

9. The semiconductor device of claim 1, wherein said transistors are oxidized subsequent to formation of said LDD regions of the at least one highest threshold voltage transistor to form an oxide layer thereon.

10. The semiconductor device of claim 9, wherein said LDD regions of the at least one lowest threshold voltage transistor are formed after forming said oxide layer.