Whole chip ESD protection

• US 6,879,203 B2
• Filed: 04/08/2004
• Issued: 04/12/2005
• Est. Priority Date: 07/25/2002
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lee, Jian-Hsing, Wu, Yi-Hsu, Chen, Shui-Hung
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Thinh T
• Application Number:
  US10/821,270
• Publication Number:
  US 20040188764A1
• Time in Patent Office: 369 Days
• Field of Search: 327/318, 327/320, 327/321, 327/309, 327/310, 327/328, 327/390, 327/312, 257/355
• US Class Current: 327/318
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/0292 using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

This invention provides two circuit embodiments for a whole chip electrostatic discharge, ECD, protection scheme. It also includes a method for whole chip ESD protection. This invention relates to distributing the circuit of this invention next to each input/output pad in order to provide parallel ESD current discharge paths. The advantage of this invention is the ability to create a parallel discharge path to ground in order to discharge the damaging ESD current quickly so as to avoid circuit damage. The two circuit embodiments show how the protection circuits of this invention at both the unzapped I/O pads and the zapped I/O pad are connected in a parallel circuit for discharging ESD currents quickly. These protection embodiments require a small amount of semiconductor area, since the smaller protection circuits are distributed and placed at the locations of each I/O pad.

Claims

1. A whole chip electrostatic discharge ECD method comprising the steps of:

connecting all input/output, I/O pads to each other with double isolation; and

inserting a circuit of the first embodiment of this invention between each adjacent I/O pair on a semiconductor chip, wherein the first embodiment comprises;

a PN diode whose p-side connects to the input/output, I/O pad to be protected and whose N-side is connected to Vcc supply voltage;

a PMOS FET plus NMOS FET 2-device input stage connected between Vcc and Vss;

a resistor plus NMOS FET first mid stage connected between Vcc and Vss (ground);

a resistor to ground second mid-stage; and

a PMOS FET plus NMOS FET output stag connected between Vec and Vss (ground) whose input connects from the mid-stages and whose output drives an unused I/O pad.

2. A whole chip electrostatic discharge ECD method comprising the steps of:

connecting all input/output, I/O pads to each other with double isolation, and

inserting a circuit of the second embodiment of this invention between each adjacent I/O pair on a semiconductor chip, wherein the second embodiment comprises;

a PN diode whose p-side connects to the input/output, I/O pad to be protected and whose N-side is connected to Vcc supply voltage,

a PMOS FET plus NMOS FET 2-device input stage connected between Vcc and Vss,

a resistor plus NMOS FET first mid stage connected between Vcc and Vss (ground),

a second mid-stage containing a second NMOS FET connected between input stage and ground, and

a PMOS FET plus NMOS FET output stage connected between Vcc and Vss (ground) whose input connects from the mid stages and whose output drives an unused I/O pad.