Method and apparatus for monitoring integrated circuit fabrication

• US 6,879,924 B2
• Filed: 01/22/2004
• Issued: 04/12/2005
• Est. Priority Date: 11/04/2002
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Brion Technologies Incorporated (ASML Holding NV)
• Inventors: Ye, Jun, Chen, Xun
• Primary Examiner(s): Raymond, Edward
• Application Number:
  US10/763,142
• Publication Number:
  US 20040162692A1
• Time in Patent Office: 446 Days
• Field of Search: 702/116, 702/117, 702/132, 702/136, 702/184, 702/185, 438/5, 438/10, 438/11, 438/14, 156/345.13
• US Class Current: 702/117
• CPC Class Codes: G01D 9/005 Solid-state data loggers
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67276 Production flow monitoring, e.g. for increasing throughput program-control systems per se G05B19/00, e.g. total factory control G05B19/418
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

In one aspect, the present invention is a sensor unit for sensing process parameters of a process to manufacture an integrated circuit using integrated circuit processing equipment. In one embodiment, the sensor unit includes a substrate having a wafer-shaped profile and a first sensor, disposed on or in the substrate, to sample a first process parameter. The sensor unit of this embodiment also includes a second sensor, disposed on or in the substrate, to sample a second process parameter wherein the second process parameter is different from the first process parameter. In one embodiment, the sensor unit includes a first source, disposed on or in the substrate, wherein first source generates an interrogation signal and wherein the first sensor uses the interrogation signal from the first source to sample the first process parameter. The sensor unit may also include a second source, disposed on or in the substrate, wherein second source generates an interrogation signal and wherein the second sensor uses the interrogation signal from the second source to sample the second process parameter. The first sensor and the first source may operate in an end-point mode or in a real-time mode. In this regard, the first sensor samples the first parameter periodically or continuously while the sensor unit is disposed in the integrated circuit processing equipment and undergoing processing. In one embodiment, the first sensor is a temperature sensor and the second sensor is a pressure sensor, a chemical sensor, a surface tension sensor or a surface stress sensor.

Claims

1. An EIW unit for use in sensing a parameter of a surface structure that is formed on the EIW by integrated circuit processing equipment which is used to manufacture an integrated circuit, the EIW unit comprising:

a substrate having a wafer or water-like shape; and

a plurality of sensors, disposed on or in the substrate, to sample the process parameter of the surface structure that is formed above the sensors and on the EIW unit by the integrated circuit processing equipment during processing.

2. The EIW unit of claim 1 wherein the plurality of sensors includes a plurality of light sensors and wherein the EIW further includes a predetermined surface layer disposed on the EIW and above the plurality of light sensors wherein the predetermined surface layer is adapted to receive the surface structure thereon.

3. The EIW unit of claim 2 wherein predetermined surface layer includes a plurality of layers.

4. The EIW unit of claim 3 wherein the plurality of layers includes a composite dielectric structure.

5. The EIW unit of claim 2 wherein the predetermined surface layer is patterned to guide or shape the light sampled by the plurality of light sensors.

6. The EIW unit of claim 2 wherein the predetermined surface layer includes a grating structure having a refractive index.

7. The EIW unit of claim 6 wherein the refractive index of the grating structure is capable of being changed dynamically.

8. The EIW unit of claim 6 wherein the EIW unit further includes an acoustic modulation module disposed in or on the substrate to control the refractive index of the grating structure.

9. The EIW unit of claim 1 wherein the plurality of sensors operates in an end-point mode.

10. The EIW unit of claim 1 wherein the plurality of sensors operates in a real-time mode.

11. The EIW unit of claim 1 wherein the plurality of sensors includes a plurality of light sensors and wherein the light sensors sample light that is reflected or scattered by the surface structure.

12. The EIW unit of claim 11 further including a first light source, disposed on or in the substrate, to output light to permit sampling of the process parameter of the surface structure by the plurality of sensors.

13. The EIW unit of claim 12 wherein the intensity of the light output by the first light source is varied or modulated.

14. The EIW unit of claim 12 further including a second light source disposed on or in the substrate, to output light to permit sampling of the process parameter of the surface structure by the plurality of sensors and wherein the intensity of the light output by the first light source is varied or modulated relative to the second light source.

15. The EIW unit of claim 12 wherein the process parameter is a thickness of the surface structure.

16. The EIW unit of claim 11 wherein the plurality of light sensors is CMOS devices, charge coupled devices, or photodiodes.

17. The EIW unit of claim 11 wherein the plurality of light sensors periodically or continuously samples the intensity of the light while the EIW unit is disposed in the integrated circuit processing equipment and undergoing processing.

18. The EIW unit of claim 17 further including data storage, coupled to the plurality of light sensors, to store data which is representative of the parameter of the surface structure.

19. The EIW unit of claim 17 further including:

communication circuitry to provide the data which is representative of the parameter to external circuitry; and

at least one rechargeable battery, to provide electrical power to the communication circuitry.

20. The EIW unit of claim 17 wherein the process parameter is a surface profile of the surface structure.

21. A method of measuring a process parameter of a surface structure that is formed by an integrated circuit manufacturing process wherein the method of measuring the process parameter uses an EIW unit having a substrate and a plurality of sensors disposed on or in the substrate, the method comprising:

placing the substrate into the integrated circuit processing equipment;

performing the integrated circuit manufacturing process that forms a surface structure above the plurality of sensors during the manufacturing process;

enabling the plurality of sensors to sample the process parameter of the surface structure;

sampling the process parameter of the surface structure using the plurality of sensors; and

determining the process parameter of the surface structure using data from the plurality of sensors.

22. The method of claim 21 wherein the EIW unit further includes a predetermined surface layer having a refractive index wherein the predetermined surface layer is disposed above the plurality of light sensors and wherein the method further includes changing the refractive index of the predetermined surface layer.

23. The method of claim 22 further including dynamically changing the refractive index of the predetermined surface layer while or after performing the integrated circuit manufacturing process.

24. The method of claim 21 wherein the process parameter of the surface structure that is formed by the integrated circuit manufacturing process is sampled after performing the integrated circuit manufacturing process.

25. The method of claim 21 wherein the process parameter of the surface structure that is formed by the integrated circuit manufacturing process is sampled while performing the integrated circuit manufacturing process.

26. The method of claim 21 wherein the EIW unit further includes a plurality of light sources wherein the plurality of sensors samples the light output by the plurality of light sources and wherein the method further includes enabling the plurality of light sources to output light and wherein sampling the process parameter of the surface structure using the plurality of sensors includes sampling the response to the light output by the plurality of light sources using the plurality of sensors.

27. The method of claim 26 wherein the plurality of light sources output light at different wavelengths.

28. The method of claim 26 wherein sampling the response to the light output by the plurality of light sources includes sampling the light, while or after performing the integrated circuit manufacturing process, that is reflected or scattered by the surface structure.

29. The method of claim 28 further including varying the intensity of the light output by the plurality of light sources.

30. The method of claim 28 further including varying the intensity of the light output by a first light source of the plurality of light sources relative to another light source of the plurality of light sources.

31. The method of claim 26 wherein sampling the response to the light output by the plurality of light sources includes periodically or continuously sampling the response to the light output by the plurality of light sources while performing the integrated circuit manufacturing process.

32. The method of claim 26 further including sampling the intensity of the reflected or scattered light using the plurality of sensors.

33. The method of claim 32 wherein the plurality of light sources is disposed on or in the substrate of the EIW unit.

34. The method of claim 33 further including varying the intensity of the light output by the plurality of light sources.

35. The method of claim 33 further including varying the intensity of the light output by a first light source of the plurality of light sources relative to another light source of the plurality of light sources.

36. The method of claim 33 wherein sampling the response to the light output by the plurality of light sources includes periodically or continuously sampling the response to the light output by the plurality of light sources while performing the integrated circuit manufacturing process.

37. The method of claim 33 further including sampling the response to the light output by the plurality of light sources after performing the integrated circuit manufacturing process.

38. The method of claim 33 wherein the EIW unit further includes a predetermined surface layer having a refractive index, wherein the predetermined surface layer is disposed above the plurality of sensors and plurality of light and wherein performing the integrated circuit manufacturing process includes forming the surface structure on the predetermined surface layer.

39. The method of claim 38 further including changing the refractive index of the predetermined surface layer.

40. The method of claim 38 further including dynamically changing the refractive index of the predetermined surface layer while or after performing the integrated circuit manufacturing process.

41. The method of claim 33 wherein the process parameter is a thickness of the surface structure.

42. The method of claim 21 wherein the process parameter is a thickness of the surface structure.

43. The method of claim 21 wherein the process parameter is a spatial distribution of a surface structure.

44. A system for sensing a process parameter of a surface structure that is formed by integrated circuit processing equipment which is used to manufacture an integrated circuit, the system comprising:

an EIW unit that is adapted to be disposed in the integrated circuit processing equipment, the EIW unit including;

substrate having a wafer or wafer-like shape; and

a sensor, disposed on or in the substrate, to sample the process parameter of the surface structure that is formed by integrated circuit processing equipment, wherein the sensor samples the process parameter while or after the EIW unit is subjected to processing by the integrated circuit processing equipment; and

a computing device to receive the samples from the sensor and determine the process parameter of the surface structure using the samples.

45. The system of claim 44 wherein the sensor includes CMOS devices, charge coupled devices, or photodiodes.

46. The system of claim 44 wherein the process parameter is a surface profile of the surface structure.

47. The system of claim 44 wherein the process parameter is a thickness of the surface structure.

48. The system of claim 44 wherein the sensor operates in an end-point mode.

49. The system of claim 44 wherein the sensor operates in a real-time mode.

50. The system of claim 44 wherein the EIW unit further includes a predetermined surface layer disposed above the sensor wherein the predetermined surface layer is adapted to receive the surface structure thereon.

51. The system of claim 50 wherein the system further includes a source that outputs light at different wavelengths.

52. The system of claim 50 wherein the sensor includes a plurality of light sensors wherein the light sensors sample light that is reflected or scattered by a surface structure that is formed by the integrated circuit processing equipment.

53. The system of claim 52 wherein the predetermined surface layer is patterned to guide or shape the light output by a light source that is disposed on or in the substrate.

54. The system of claim 52 wherein the predetermined surface layer includes a grating structure having a refractive index.

55. The system of claim 54 wherein the refractive index of the grating structure is capable of being changed dynamically.

56. The system of claim 52 wherein the EIW unit further includes an acoustic modulation module disposed in or on the substrate to control the refractive index of the grating structure.

57. The system of claim 50 wherein predetermined surface layer includes a plurality of layers.

58. The system of claim 57 wherein the plurality of layers includes a composite dielectric structure.

59. The system of claim 50 wherein the source includes a plurality of light sources disposed in or on the substrate of the EIW unit.

60. The system of claim 59 wherein the sensor and source operate in an end-point mode.

61. The system of claim 59 wherein the sensor and source operate in a real-time mode.

62. The system of claim 59 wherein the intensity of the light output by the plurality of light sources is varied or modulated.

63. The system of claim 59 wherein the intensity of the light output by a first light source of the plurality of light sources is varied or modulated relative to another light source of the plurality of light sources.

64. The system of claim 59 wherein the computing device determines a thickness of a surface layer formed on the EIW unit by the integrated circuit processing equipment.

65. The system of claim 59 wherein the computing device determines a spatial distribution of a surface layer formed on the EIW unit by the integrated circuit processing equipment.