Process for direct deposition of ALD RhO2
First Claim
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1. A method of conducting atomic layer deposition of a rhodium oxide layer on a substrate, comprising:
- providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said substrate on said deposition region;
introducing an organo rhodium group metal precursor into said reactor chamber under conditions permitting the formation of an organo rhodium monolayer on said substrate; and
introducing a reaction gas into said reactor chamber, such that said organo rhodium monolayer is oxidized to a conductive rhodium oxide layer on said substrate.
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Abstract
The present invention provides methods of performing atomic layer deposition to form conductive, oxidation-resistant rhodium oxide films and films comprising metals, such as platinum, alloyed with rhodium oxide. The present invention also provides memory devices and processors comprising films deposited by the above methods.
68 Citations
80 Claims
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1. A method of conducting atomic layer deposition of a rhodium oxide layer on a substrate, comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said substrate on said deposition region;
introducing an organo rhodium group metal precursor into said reactor chamber under conditions permitting the formation of an organo rhodium monolayer on said substrate; and
introducing a reaction gas into said reactor chamber, such that said organo rhodium monolayer is oxidized to a conductive rhodium oxide layer on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of conducting atomic layer deposition of a rhodium oxide on an integrated circuit material layer, comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said material layer in said deposition region;
introducing an organo rhodium group metal precursor into said reactor chamber under conditions permitting the formation of an organo rhodium monolayer on said material layer; and
introducing a reaction gas into said reactor chamber, such that said organo rhodium monolayer is oxidized to a conductive rhodium oxide layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method of conducting atomic layer deposition of an alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on a substrate, said method comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said substrate on said deposition region;
introducing a rhodium group metal precursor into said reactor chamber under conditions permitting the formation of a rhodium monolayer on said substrate;
introducing a first reaction gas into said reactor chamber, such that said rhodium monolayer is oxidized to a conductive rhodium oxide layer;
introducing a precursor compound comprising a metal selected from the group consisting of Pt, Os, Pd, and Ir;
introducing a second reaction gas into said reactor chamber, wherein said introduction causes removal of organic components from the precursor compound, yielding a conductive alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on said substrate. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. A method of conducting atomic layer deposition of an alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on an integrated circuit material layer, said method comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said integrated circuit material layer on said deposition region;
introducing a rhodium group metal precursor into said reactor chamber under conditions permitting the formation of a rhodium monolayer on said material layer;
introducing a first reaction gas into said reactor chamber, such that said rhodium monolayer is oxidized to a rhodium oxide layer;
introducing a precursor compound comprising a metal selected from the group consisting of Pt, Os, Pd, and Ir;
introducing a second reaction gas into said reactor chamber, wherein said introduction causes removal of organic components from the precursor compound, yielding a conductive alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on said material layer. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68)
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69. A method of forming a capacitor, said method comprising:
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forming a first and second electrode; and
forming a dielectric layer between said first and second electrode, wherein at least one of said first and second electrode is formed by performing atomic layer deposition of a conductive rhodium oxide layer.
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70. A method of forming a capacitor, said method comprising:
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forming a first and second electrode; and
forming a dielectric layer between said first and second electrode, wherein at least one of said first and second electrode is formed by performing atomic layer deposition of a conductive alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir.
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71. A capacitor comprising:
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a first electrode;
a second electrode; and
a dielectric positioned between said first electrode and said second electrode, wherein at least one of said first and second electrode comprises a continuous ALD deposited conductive rhodium oxide film layer.
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72. A capacitor comprising:
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a first electrode;
a second electrode; and
a dielectric positioned between said first electrode and said second electrode;
wherein at least one of said first and second electrode comprises a continuous ALD deposited conductive film comprising an alloy of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir.
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73. A processor system comprising:
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a processor; and
a memory device coupled to exchange data with said processor, said memory device comprising;
at least one continuous ALD deposited conductive rhodium oxide film layer.
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74. A processor system comprising:
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a processor; and
a memory device coupled to exchange data with said processor, said memory device comprising;
at least one continuous ALD deposited conductive film layer comprising an alloy of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir.
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75. A method of conducting atomic layer deposition of a rhodium oxide layer on a substrate, comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said substrate on said deposition region;
introducing an organo rhodium group metal precursor into said reactor chamber under conditions permitting the formation of an organo rhodium monolayer on said substrate; and
introducing a reaction gas into said reactor chamber, such that said organo rhodium monolayer is fully oxidized to a conductive rhodium oxide layer on said substrate.
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76. A method of conducting atomic layer deposition of a rhodium oxide on an integrated circuit material layer, comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said material layer in said deposition region;
introducing an organo rhodium group metal precursor into said reactor chamber under conditions permitting the formation of an organo rhodium monolayer on said material layer; and
introducing a reaction gas into said reactor chamber, such that said organo rhodium monolayer is fully oxidized to a conductive rhodium oxide layer.
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77. A method of conducting atomic layer deposition of an alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on a substrate, said method comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said substrate on said deposition region;
introducing a rhodium group metal precursor into said reactor chamber under conditions permitting the formation of a rhodium monolayer on said substrate;
introducing a first reaction gas into said reactor chamber, such that said rhodium monolayer is fully oxidized to a conductive rhodium oxide layer;
introducing a precursor compound comprising a metal selected from the group consisting of Pt, Os, Pd, and Ir; and
introducing a second reaction gas into said reactor chamber, wherein said introduction causes removal of organic components from the precursor compound, yielding a conductive alloy layer of fully oxidized rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on said substrate.
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78. A method of conducting atomic layer deposition of an alloy layer of rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on an integrated circuit material layer, said method comprising:
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providing a deposition apparatus comprising a reactor chamber having a deposition region;
positioning said integrated circuit material layer on said deposition region;
introducing a rhodium group metal precursor into said reactor chamber under conditions permitting the formation of a rhodium monolayer on said material layer;
introducing a first reaction gas into said reactor chamber, such that said rhodium monolayer is fully oxidized to a rhodium oxide layer;
introducing a precursor compound comprising a metal selected from the group consisting of Pt, Os, Pd, and Ir; and
introducing a second reaction gas into said reactor chamber, wherein said introduction causes removal of organic components from the precursor compound, yielding a conductive alloy layer of fully oxidized rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir on said material layer.
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79. A method of forming a capacitor, said method comprising:
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forming a first and second electrode; and
forming a dielectric layer between said first and second electrode, wherein at least one of said first and second electrode is formed by performing atomic layer deposition of a fully oxidized, conductive rhodium oxide layer.
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80. A method of forming a capacitor, said method comprising:
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forming a first and second electrode; and
forming a dielectric layer between said first and second electrode, wherein at least one of said first and second electrode is formed by performing atomic layer deposition of a conductive alloy layer of fully oxidized rhodium oxide and a metal selected from the group consisting of Pt, Os, Pd, and Ir.
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Specification