Optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features

• US 6,881,523 B2
• Filed: 03/13/2002
• Issued: 04/19/2005
• Est. Priority Date: 03/14/2001
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools B.V. (ASML Holding NV)
• Inventors: Smith, Bruce W.
• Primary Examiner(s): Huff, Mark F.
• Assistant Examiner(s): SAGAR, KRIPA
• Application Number:
  US10/096,536
• Publication Number:
  US 20020192570A1
• Time in Patent Office: 1,133 Days
• Field of Search: 430/5, 430/30, 716 19- 21
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A photolithography mask for optically transferring a pattern formed in said mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, where each of the plurality of resolvable features has a longitudinal axis extending in a first direction; and a pair of non-resolvable optical proximity correction features disposed between two of the plurality of resolvable features, where the pair of non-resolvable optical proximity correction features has a longitudinal axis extending in a second direction, wherein the first direction of the longitudinal axis of the plurality of resolvable features is orthogonal to the second direction of the longitudinal axis of the pair of non-resolvable optical proximity correction features.

Claims

1. A photolithography mask for optically transferring a pattern formed in said mask onto a substrate, said mask comprising:

a plurality of resolvable features to be printed on said substrate, each of said plurality of resolvable features having a longitudinal axis extending in a first direction; and

a pair of non-resolvable optical proximity correction features disposed between two of said plurality of resolvable features, said pair of non-resolvable optical proximity correction features having a longitudinal axis extending in a second direction,

wherein said first direction of said longitudinal axis of said plurality of resolvable features is orthogonal to said second direction of said longitudinal axis of said pair of non-resolvable optical proximity correction features, and

wherein said pair of non-resolvable optical proximity correction features have a length dimension which is substantially equal to the width of a space separating said two of said plurality of resolvable features.

2. The photolithography mask of claim 1, wherein said pair of non-resolvable optical proximity correction features do not contact said two of said plurality of resolvable features.

3. The photolithography mask of claim 2, wherein a plurality of pairs of said non-resolvable optical proximity correction features are disposed between said two of said plurality of resolvable features, each said pair of non-resolvable optical features having a longitudinal axis extending in a second direction.

4. The photolithography mask of claim 3, wherein said plurality of said pairs of non-resolvable optical proximity correction features disposed between said two of said plurality of resolvable features all have substantially the same length, so as to form a single group of correction features.

5. The photolithography mask of claim 4, wherein said mask further comprises a plurality of said single group of correction features, each of said plurality of said single group of correction features being disposed between a given pair of said resolvable features.

6. The photolithography mask of claim 4, wherein said pairs of non-resolvable optical proximity correction features function to minimize the increase in a second order diffraction component of said resolvable features.

7. The photolithography mask of claim 5, wherein said groups of correction features have a frequency component which is substantially a harmonic of a frequency component of said plurality of resolvable features.

8. The photolithography mask of claim 4, wherein said pairs of non-resolvable optical proximity correction features function to reduce an isofocal inflection point associated with a given set of said resolvable features.

9. A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate at least one file corresponding to a photolithography mask for optically transferring a pattern formed in said mask onto a substrate, said mask comprising:

a plurality of resolvable features to be printed on said substrate, each of said plurality of resolvable features having a longitudinal axis extending in a first direction; and

a pair of non-resolvable optical proximity correction features disposed between two of said plurality of resolvable features, said pair of non-resolvable optical proximity correction features having a longitudinal axis extending in a second direction,

wherein said first direction of said longitudinal axis of said plurality of resolvable features is orthogonal to said second direction of said longitudinal axis of said pair of non-resolvable optical proximity correction features, and

wherein said pair of non-resolvable optical proximity correction features have a length dimension which is substantially equal to the width of a space separating said two of said plurality of resolvable features.

10. The computer program product of claim 9, wherein each pair of said non-resolvable optical proximity correction features does not contact said two of said plurality of resolvable features.

11. The computer program product of claim 9, wherein a plurality of said pairs of non-resolvable optical proximity correction features are disposed between said two of said plurality of resolvable features, each said pair of non-resolvable optical features having a longitudinal axis extending in a second direction.

12. The computer program product of claim 11, wherein said plurality of pairs of said non-resolvable optical proximity correction features disposed between said two of said plurality of resolvable features all have substantially the same length, so as to form a single group of correction features.

13. The computer program product of claim 12, wherein said mask further comprises a plurality of said single group of correction features, each of said plurality of said single group of correction features being disposed between a given pair of said resolvable features.

14. The computer program product of claim 13, wherein said plurality of pairs of non-resolvable optical proximity correction features function to minimize the increase in a second order diffraction component of said resolvable features.

15. The computer program product of claim 13, wherein said groups of correction features have a frequency component which is substantially a harmonic of a frequency component of said plurality of resolvable features.

16. The computer program product of claim 13, wherein said plurality of pairs of non-resolvable optical proximity correction features function to reduce an isofocal inflection point associated with a given set of said resolvable features.

17. A method of transferring a lithographic pattern from a photolithography mask onto a substrate by use of a lithographic exposure apparatus, said method comprising the steps of:

forming a plurality of resolvable features to be-printed on said substrate, each of said plurality of resolvable features having a longitudinal axis extending in a first direction; and

forming a pair of non-resolvable optical proximity correction features disposed between two of said plurality of resolvable features, said pair of non-resolvable optical proximity correction features having a longitudinal axis extending in a second direction,

wherein said first direction of said longitudinal axis of said plurality of resolvable features is orthogonal to said second direction of said longitudinal axis of said pair of non-resolvable optical proximity correction features, and

wherein said pair of non-resolvable optical proximity correction feature have a length dimension which is less than the width of a space separating said two of said plurality of resolvable features, said length of said pair of non-resolvable optical proximity correction being adjusted so as to minimize the increase in a second order diffraction component of said mask associated with said mask.

18. The method of claim 17, wherein a plurality of pairs of said non-resolvable optical proximity correction features are disposed between said two of said plurality of resolvable features, each pair of said non-resolvable optical features having a longitudinal axis extending in a second direction.

19. The method of claim 18, wherein said plurality of pairs of said non-resolvable optical proximity correction features disposed between said two of said plurality of resolvable features all have substantially the same length, so as to form a single group of correction features.

20. The method of claim 19, wherein mask further comprises a plurality of said single group of correction features, each of said plurality of said single group of correction features being disposed between a given pair of said resolvable features.

21. The method of claim 20, wherein said groups of correction features have frequency component which is substantially a harmonic of a frequency component of said plurality resolvable features.

22. The method of claim 19, wherein said pairs of non-resolvable optical proximity correction features function to reduce an isofocal inflection point associated with a given set of said resolvable features.

23. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using a radiation system;

(c) using a pattern on a mask to endow the projection beam with a pattern in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,

wherein, in step (c), use is made of a mask comprising;

a plurality of resolvable features to be printed on said substrate, each of said plurality of resolvable features having a longitudinal axis extending in a first direction; and

a pair of non-resolvable optical proximity correction features disposed between two of said plurality of resolvable features, said pair of non-resolvable optical proximity correction features having a longitudinal axis extending in a second direction,

wherein said first direction of said longitudinal axis of said plurality of resolvable features is orthogonal to said second direction of said longitudinal axis of said pair of non-resolvable optical proximity correction features, and

wherein said pair of non-resolvable optical proximity correction features have a length dimension which is substantially equal to the width of a space separating said two of said plurality of resolvable features.