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Method of forming a MIM capacitor with metal nitride electrode

  • US 6,881,642 B2
  • Filed: 04/21/2003
  • Issued: 04/19/2005
  • Est. Priority Date: 03/11/2002
  • Status: Expired due to Fees
First Claim
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1. A method of forming an MIM capacitor on a semiconductor substrate, comprising the acts of:

  • providing a conductive support layer over a polysilicon plug formed over a substrate;

    providing a first metal nitride layer over said conductive support layer;

    providing a dielectric layer over said first metal nitride layer and in contact with said conductive support layer; and

    providing a second metal nitride layer over said dielectric layer, wherein each of said first and second metal nitride layers is formed of titanium nitride or boron-doped titanium nitride material.

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