Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor
First Claim
Patent Images
1. A semiconductor component, comprising:
- a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
said semiconductor substrate region having a further trench formed therein;
said trench side region being a mesa region between said two trenches.
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Abstract
A semiconductor component has a minimal size and area requirement. The semiconductor component is formed in a trench with wall regions and a bottom region. Terminal regions for the electrical connection of first and second contact regions (S, B) are formed at least partly within the trench (30).
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Citations
63 Claims
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1. A semiconductor component, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
said semiconductor substrate region having a further trench formed therein;
said trench side region being a mesa region between said two trenches. - View Dependent Claims (2, 3, 4)
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5. A semiconductor component, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench;
a trench side region being narrower than said width of said trench;
said trench having a central trench section;
a further contact region being formed outside said trench directly proximate said trench in a region of said central trench section;
said semiconductor substrate region having a further trench formed therein;
said trench side region being a mesa region between said two trenches. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. A trench structure transistor, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for direct electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
said semiconductor substrate region having a further trench formed therein;
said trench side region being a mesa region between said two trenches.
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51. A trench MOSFET, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for direct electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
said semiconductor substrate region having a further trench formed therein;
said trench side region being a mesa region between said two trenches.
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52. An IGBT, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for direct electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
said semiconductor substrate region having a further trench formed therein;
said trench side region being a mesa region between said two trenches.
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53. A field plate transistor, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, and a bottom region formed therein, said wall regions including an upper trench section;
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for direct electrical connection of said contact region and formed at least partly within said trench;
a trench side region being narrower than said width of said trench;
a second-further contact region is formed within said trench; and
a third-further contact region formed outside said trench directly proximate said trench in said region of said lower trench section. - View Dependent Claims (54, 55, 56, 57, 58)
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59. A semiconductor component, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, a bottom region, and a central trench section, formed therein, said wall regions including an upper trench section; and
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
a further contact region formed outside said trench directly proximate said trench in a region of said central trench section; and
a further terminal region for electrical connection of said further contact region formed at least partly within said trench.
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60. A trench structure transistor, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, a bottom region, and a central trench section, formed therein, said wall regions including an upper trench section; and
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
a further contact region formed outside said trench directly proximate said trench in a region of said central trench section; and
a further terminal region for electrical connection of said further contact region formed at least partly within said trench.
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61. A trench MOSFET, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, a bottom region, and a central trench section, formed therein, said wall regions including an upper trench section; and
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
a further contact region formed outside said trench directly proximate said trench in a region of said central trench section; and
a further terminal region for electrical connection of said further contact region formed at least partly within said trench.
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62. An IGBT, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, a bottom region, and a central trench section, formed therein, said wall regions including an upper trench section; and
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
a further contact region formed outside said trench directly proximate said trench in a region of said central trench section; and
a further terminal region for electrical connection of said further contact region formed at least partly within said trench.
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63. A field plate transistor, comprising:
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a semiconductor substrate region having a trench with a width, wall regions, a bottom region, and a central trench section, formed therein, said wall regions including an upper trench section; and
a contact region formed outside and directly proximate said trench in a region of said upper trench section;
a terminal region for electrical connection of said contact region and formed at least partly within said trench; and
a trench side region being narrower than said width of said trench;
a further contact region formed outside said trench directly proximate said trench in a region of said central trench section; and
a further terminal region for electrical connection of said further contact region formed at least partly within said trench.
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Specification