Nanowires, nanostructures and devices fabricated therefrom

• US 6,882,051 B2
• Filed: 03/29/2002
• Issued: 04/19/2005
• Est. Priority Date: 03/30/2001
• Status: Expired due to Term

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Yang, Peidong, Huang, Michael, Mao, Samuel S., Fan, Rong, Shakouri, Ali, Wu, Yiying, Majumdar, Arun, Sands, Timothy D., Russo, Richard E., Kind, Hannes, Weber, Eicke R., Feick, Henning, Yan, Haoquan
• Primary Examiner(s): Lebentritt, Michael S.
• Assistant Examiner(s): SMITH, BRADLEY
• Application Number:
  US10/112,578
• Publication Number:
  US 20020175408A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/734, 257/741, 257/746, 257/749
• US Class Current: 257/746
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/107 Subwavelength-diameter waveguides, e.g. nanowires
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 21/02645 Seed materials
• CPC Class Codes: H01L 21/02653 Vapour-liquid-solid growth
• CPC Class Codes: H01L 2224/45565 Single coating layer
• CPC Class Codes: H01L 2224/45599 Material
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/068 comprising a junction
• CPC Class Codes: H01L 29/12 : characterised by the materials of which they are formed
• CPC Class Codes: H01L 29/125 : Quantum wire structures
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/0101 : Neon [Ne]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/01084 : Polonium [Po]
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 31/0352 : characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 33/06 : within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/18 : within the light emitting region
• CPC Class Codes: H01L 33/24 : of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01S 5/341 : Structures having reduced dimensionality, e.g. quantum wires
• CPC Class Codes: H01S 5/3412 : quantum box or quantum dash
• CPC Class Codes: H10N 10/00 : Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects integrated devices or assemblies of multiple devices H10N19/00
• CPC Class Codes: H10N 30/2042 : Cantilevers, i.e. having one fixed end
• CPC Class Codes: H10N 30/85 : Piezoelectric or electrostrictive active materials
• CPC Class Codes: H10N 30/852 : Composite materials, e.g. having 1-3 or 2-2 type connectivity
• CPC Class Codes: Y10S 977/762 : Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/763 : formed along or from crystallographic terraces or ridges
• CPC Class Codes: Y10S 977/764 : with specified packing density
• CPC Class Codes: Y10S 977/765 : with specified cross-sectional profile, e.g. belt-shaped
• CPC Class Codes: Y10S 977/951 : Laser
• CPC Class Codes: Y10T 428/24994 : Fiber embedded in or on the surface of a polymeric matrix
• CPC Class Codes: Y10T 428/249949 : Two or more chemically different fibers
• CPC Class Codes: Y10T 428/29 : Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
• CPC Class Codes: Y10T 428/2913 : Rod, strand, filament or fiber
• CPC Class Codes: Y10T 428/2916 : including boron or compound thereof [not as steel]
• CPC Class Codes: Y10T 428/292 : In coating or impregnation
• CPC Class Codes: Y10T 428/2933 : Coated or with bond, impregnation or core
• CPC Class Codes: Y10T 428/2958 : Metal or metal compound in coating
• CPC Class Codes: Y10T 428/2973 : Particular cross section
• CPC Class Codes: Y10T 428/298 : Physical dimension

Abstract

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Claims

1. A nanowire, comprising:

a first segment of a first material; and

a second segment of a second material joined to said first segment;

wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm; and

wherein said nanowire is selected from a population of nanowires having a substantially monodisperse distribution of diameters.

2. A nanowire, comprising:

a first segment of a first material; and

a second segment of a second material joined to said first segment;

wherein at least one of said segments has a substantially uniform diameter;

said nanowire displaying characteristics selected from the group consisting essentially of electronic properties, optical properties, physical properties, magnetic properties and chemical properties that are modified relative to the bulk characteristics of said first and second materials by quantum confinement effects.

3. A nanowire, comprising:

a first segment of a first material; and

a second segment of a second material joined to said first segment;

wherein at least one of said segments has a substantially uniform diameter;

said nanowire having at least one electronic property that varies as a function of diameter of said nanowire.

4. A nanowire as recited in claim 3, wherein said at least one electronic property of said nanowire comprises band-gap energy which varies as a function of diameter of said nanowire.

5. A nanowire, comprising:

a first segment of a substantially crystalline material; and

a second segment of a substantially crystalline material joined to said first segment;

wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.

6. A nanowire as recited in claim 5, wherein each of said first and said second segments comprises a doped semiconductor material.

7. A nanowire as recited in claim 6, wherein said doped semiconductor material is selected from the group consisting essentially of a group III-V semiconductor, an elemental semiconductor, a group II-VI semiconductor, a group II-IV semiconductor, and tertiaries and quaternaries thereof.

8. A nanowire as recited in claim 5, wherein each of said first and second segments exhibits the electrical characteristics of a homogeneously doped semiconductor.

9. A nanowire superlattice structure, comprising:

a first segment of a material;

a second segment of a material joined to said first segment; and

a third segment of a material joined to at least one of said first or second segments;

wherein at least two of said segments are longitudinally adjacent;

wherein at least two of said segments comprise compositionally different materials; and

wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.

10. A nanowire superlattice structure, comprising:

a first segment of a material;

a second segment of a material joined to said first segment; and

a third segment joined to at least one of said first or second segments;

wherein at least two of said segments comprise compositionally different materials; and

wherein at least two of said segments are longitudinally adjacent;

said nanowire superlattice structure displaying characteristics selected from the group consisting essentially of electronic properties, optical properties, physical properties, magnetic properties and chemical properties that are modified relative to the bulk characteristics of said first and second materials by quantum confinement effects.

14. A nanowire superlattice structure as recited in claim 9, 10, 11, 12, or 13 wherein each of said segments comprises a doped semiconductor material.

15. A nanowire superlattice structure as recited in claim 14, wherein said doped semiconductor material is selected from the group consisting essentially of a group III-V semiconductor, an elemental semiconductor, a group II-VI semiconductor, a group II-IV semiconductor, and tertiaries and quaternaries thereof.

16. A nanowire superlattice structure as recited in claim 9, 10, 11, 12, or 13, wherein each of said segments exhibits the electrical characteristics of a homogeneously doped semiconductor.

17. A superlattice structure as recited in claim 9, 10, 11, 12, 13, 14, 15, or 16, wherein said first and second segments are longitudinally adjacent, wherein said third segment comprises a shell around a core, and wherein said core comprises said first or second segment.

18. A superlattice structure as recited in claim 9, 10, 11, 12, 13, 14, 15 or 16, wherein said first and second segments are longitudinally adjacent, wherein said third segment comprises a shell around a core, and wherein said core comprises said first and second segments.

19. A superlattice structure as recited in claim 9, 10, 11, 12, 13, 14, 15, or 16, wherein said first and second segments are longitudinally adjacent, wherein said first or second segment comprises a shell around a core, and wherein said core comprises said third segment.

20. A superlattice structure as recited in claim 9, 10, 11, 12, 13, 14, 15 or 16, wherein said first and second segments are longitudinally adjacent wherein said first and second segments comprise a shell around a core, and wherein said core comprises said third segment.

21. A superlattice structure as recited in claim 9, 10, 11, 12, 13, 14, 15 or 16, further comprising a fourth segment joined to at least one of said first or second segments, said fourth segment joined to said third segment, wherein said third and fourth segments comprise a shell around a core, and wherein said core comprises said first and second segments.

11. A nanowire supertattice structure, comprising:

a first segment of a material;

a second segment of a material joined to said first segment; and

a third segment joined to at least one of said first or second segments;

wherein at least two of said segments comprise compositionally different materials; and

wherein at least two of said segments are longitudinally adjacent;

said nanowire superlattice structure having at least one electronic property that varies as a function of diameter of at least one of said segments.

12. A nanowire superlattice structure as recited in claim 11, wherein said at least one electronic property of said nanowire supper lattice comprises band gap energy which varies as a function of diameter of said nanowire.

13. A nanowire superlattice structure, comprising:

a first segment of a substantially crystalline material;

a second segment at a substantially crystalline material joined to said first segment; and

a third segment of a substantially crystalline material joined to at least one of said first or second segments;

wherein at least two of said segments comprise compositionally different materials;

wherein at least two of said segments are longitudinally adjacent; and

wherein at least one of said segments has a substantially uniform diameter of less than approximately 200 nm.