Semiconductor switching device
First Claim
Patent Images
1. A semiconductor switching circuit device formed on a substrate, comprising:
- a first, a second, a third and a fourth field-effect transistor, each of said transistors having a source electrode, a gate electrode and a drain electrode which are formed on a channel layer of the substrate;
a first, a second, a third and a fourth input terminal pad corresponding to the first, second, third and fourth transistors, respectively, the source electrode or the drain electrode of each of the four transistors being connected to the corresponding input terminal pad thereof;
a first common output terminal pad being electrically in direct contact with the source electrode or the drain electrode of the first transistor and being electrically in direct contact with the source electrode or the drain electrode of the second transistor, the two electrodes of the first and second transistors which are electrically in direct contact with the first common output terminal pad not being connected to any of the input terminal pads;
a second common output terminal pad being electrically in direct contact with the source electrode or the drain electrode of the third transistor and being electrically in direct contact with the source electrode or the drain electrode of the fourth transistor, the two electrodes of the third and fourth transistors which are electrically in direct contact with the second common output terminal pad not being connected to any of the input terminal pads;
a first control terminal pad connected to the gate electrodes of the first and third transistors; and
a second control terminal pad connected to the gate electrodes of the second and fourth transistors.
6 Assignments
0 Petitions
Accused Products
Abstract
A switching device receives two pairs of balanced signals and outputs one of the two pairs of the signals. The device is composed of two SPDT switches which share two control signals provided to the gates of the FET of the SPDT switches. The package of the device has eight external electrodes on the back side of the package. The eight external electrodes are configured so that they are aligned symmetrically with respect to the center line of the package. The device requires only a small package space and is suitable for mobile communication application such as cell phone accommodating CDMA and GPS signals.
-
Citations
15 Claims
-
1. A semiconductor switching circuit device formed on a substrate, comprising:
-
a first, a second, a third and a fourth field-effect transistor, each of said transistors having a source electrode, a gate electrode and a drain electrode which are formed on a channel layer of the substrate;
a first, a second, a third and a fourth input terminal pad corresponding to the first, second, third and fourth transistors, respectively, the source electrode or the drain electrode of each of the four transistors being connected to the corresponding input terminal pad thereof;
a first common output terminal pad being electrically in direct contact with the source electrode or the drain electrode of the first transistor and being electrically in direct contact with the source electrode or the drain electrode of the second transistor, the two electrodes of the first and second transistors which are electrically in direct contact with the first common output terminal pad not being connected to any of the input terminal pads;
a second common output terminal pad being electrically in direct contact with the source electrode or the drain electrode of the third transistor and being electrically in direct contact with the source electrode or the drain electrode of the fourth transistor, the two electrodes of the third and fourth transistors which are electrically in direct contact with the second common output terminal pad not being connected to any of the input terminal pads;
a first control terminal pad connected to the gate electrodes of the first and third transistors; and
a second control terminal pad connected to the gate electrodes of the second and fourth transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A semiconductor switching circuit device comprising:
-
a first switch comprising two field-effect transistors each having a source electrode, a gate electrode, a drain electrode and an input terminal pad, and a common output terminal pad for the two transistors of the first switch, the source electrode or the drain electrode of each of the two transistors of the first switch being electrically in direct contact with the common output terminal pad of the first switch, and the source electrode or the drain electrode of each of the two transistors of the first switch which is not electrically in direct contact with the common output terminal pad of the first switch being connected to the input terminal pad thereof;
a second switch comprising two field-effect transistors each having a source electrode, a gate electrode, a drain electrode and an input terminal pad, and a common output terminal pad for the two transistors of the second switch, the source electrode or the drain electrode of each of the two transistors of the second switch being electrically in direct contact with the common output terminal pad of the second switch, and the source electrode or the drain electrode of each of the two transistors of the second switch which is not electrically in direct contact with the common output terminal pad of the second switch being connected to the input terminal pad thereof; and
two control terminal pads, one of the two control terminal pads being connected to a gate electrode of one of the two transistors of the first switch and a gate electrode of one of the two transistors of the second switch, and another of said two control terminal pads being connected to a gate electrode of another of the two transistors of the first switch and a gate electrode of another of the two transistors of the second switch. - View Dependent Claims (14)
-
-
15. A semiconductor switching circuit device comprising:
-
a first switch comprising two field-effect transistors each having a source electrode, a gate electrode, a drain electrode and an input terminal pad, and a common output terminal pad for the two transistors of the first switch, the source electrode or the drain electrode of each of the two transistors of the first switch being electrically in contact with the common output terminal pad of the first switch, and the source electrode or the drain electrode of each of the two transistors of the first switch which is not electrically in contact with the common output terminal pad of the first switch being connected to the input terminal pad thereof;
a second switch comprising two field-effect transistors each having a source electrode, a gate electrode, a drain electrode and an input terminal pad, and a common output terminal pad for the two transistors of the second switch, the source electrode or the drain electrode of each of the two transistors of the second switch being electrically in contact with the common output terminal pad of the second switch, and the source electrode or the dram electrode of each of the two transistors of the second switch which is not electrically in contact with the common output terminal pad of the second switch being connected to the input terminal pad thereof; and
two control terminal pads, one of the two control terminal pads being connected to a gate electrode of one of the two transistors of the first switch and a gate electrode of one of the two transistors of the second switch, and another of said two control terminal pads being connected to a gate electrode of another of the two transistors of the first switch and a gate electrode of another of the two transistors of the second switch, wherein the four input terminal pads are configured to receive two pairs of balanced analog signals and the two common output terminal pads are configured to output one of the two pairs of balanced analog signals received by the four input terminal pads.
-
Specification