Integrated overvoltage and reverse voltage protection circuit

• US 6,882,513 B2
• Filed: 09/13/2002
• Issued: 04/19/2005
• Est. Priority Date: 09/13/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: AMI Semiconductor Inc (ON Semiconductor Corporation)
• Inventors: Laraia, J. Marcos
• Primary Examiner(s): Sircus, Brian
• Assistant Examiner(s): Kitov, Z
• Application Number:
  US10/243,749
• Publication Number:
  US 20040052022A1
• Time in Patent Office: 949 Days
• Field of Search: 361/91.1, 361/84, 361/82, 361/115, 257/360
• US Class Current: 361/91.1
• CPC Class Codes: H01L 27/0285 bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits H01L27/0281 takes precedence

Abstract

An integrated overvoltage and reverse voltage protection circuit. The protection circuit includes a field-effect transistor having a source terminal coupled to an input terminal of the protection circuit, and a drain terminal coupled to an output terminal of the protection circuit. A resistor is coupled between the source terminal and the body terminal of the field-effect transistor to inhibit reverse current flow during a reverse voltage condition. A voltage-current dependent circuit is coupled between the gate terminal and the source terminal of the field-effect transistor, and is configured to apply a voltage between the gate terminal and the source terminal that is dependent on the current passing through the voltage-current dependent circuit. A current application circuit is coupled to the voltage-current dependent circuit and is configured to apply a current that limits or even altogether stops an applied overvoltage condition from reaching a load circuit.

Claims

1. An electrical voltage protection circuit having at least one input terminal configured to receive an input voltage applied from a voltage source during operation, the protection circuit further having at least one output terminal, the protection circuit configured to provide an output voltage on the output terminal during operation, the protection circuit comprising the following:

a field-effect transistor having a gate terminal, a source terminal, a drain terminal, and a body terminal, the source terminal of the field-effect transistor being coupled to an input terminal of the protection circuit, the drain terminal of the field-effect transistor being coupled to an output terminal of the protection circuit;

a resistor coupled between the source terminal and the body terminal of the field-effect transistor;

a voltage-current dependent circuit coupled between the gate terminal and the source terminal of the field-effect transistor, the voltage-current dependent circuit configured to apply a voltage difference between the gate terminal and the source terminal that is dependent on the current passing through the voltage-current dependent circuit; and

a current application circuit coupled to the voltage-current dependent circuit and configured to apply a current through the voltage-current dependent circuit such that in at least some conditions when an overvoltage is not present, the voltage-current dependent circuit applies a voltage at the gate terminal of the field-effect transistor sufficient to turn or keep the field-effect transistor on.

2. A protection circuit in accordance with claim 1, wherein the voltage-current dependent circuit comprises a resistor.

3. A protection circuit in accordance with claim 1, wherein the voltage-current dependent circuit comprises a diode.

4. A protection circuit in accordance with claim 1, wherein the field-effect transistor is a first field-effect transistor, wherein the voltage-current dependent circuit comprises a channel region of a second field-effect transistor configured to operate in the triode or in the saturation region.

5. A protection circuit in accordance with claim 1, wherein the input terminal is a first input terminal, and the output terminal is a first output terminal, the protection circuit further comprising a second input terminal and a second output terminal.

6. A protection circuit in accordance with claim 5, wherein the field-effect transistor is a first field-effect transistor, wherein the current application circuit comprises the following:

a second field effect transistor having a source terminal coupled to the second input terminal and to the second output terminal, the drain terminal of the second field-effect transistor coupled to the gate terminal of the first field-effect transistor, the second field effect transistor also having a gate terminal.

7. A protection circuit in accordance with claim 6, wherein the current application circuit further comprises the following:

a comparator having a first input terminal connected to a reference voltage source, and having a second input terminal coupled to a node that is configured to carry a voltage during operation that is substantially proportional to the differential voltage applied between the first and second input terminals.

8. A protection circuit in accordance with claim 7, wherein the second input terminal of the comparator is coupled to whichever of the first or second input terminal is configured to carry a higher voltage during normal operation.

9. A protection circuit in accordance with claim 7, wherein the resistor is a first resistor, the protection circuit further comprising the following:

a second and third resistor coupled in series between the first and second input terminals of the protection circuit, wherein the second input terminal of the comparator is coupled to the node between the second and third resistors.

10. A protection circuit in accordance with claim 6, wherein the first field-effect transistor is a pMOSFET and the second field-effect transistor is an nMOSFET.

11. A protection circuit in accordance with claim 6, wherein the first field-effect transistor is an nMOSFET and the second field-effect transistor is a pMOSFET.

12. A protection circuit in accordance with claim 6, wherein the current application circuit further comprises the following:

an operational amplifier having a first input terminal connected to a reference voltage source, and having a second input terminal coupled to a node that is configured to carry a voltage during operation that is substantially proportional to the differential voltage between the first and second output terminals.

13. A protection circuit in accordance with claim 12, further comprising the following:

a capacitor coupled between the first and second output terminals of the protection circuit.

14. A protection circuit in accordance with claim 13, wherein the second input terminal of the comparator is coupled to a node that is configured to carry a voltage equal to the difference between the first and second output terminals of the protection circuit.

15. A protection circuit in accordance with claim 13, wherein the second input terminal and the second output terminal are forced at the same voltage.

16. A protection circuit in accordance with claim 5, wherein the current application circuit comprises the following:

an operational amplifier having a first input terminal connected to a reference voltage source, and having a second input terminal coupled to a node that is configured to carry a voltage during operation that is substantially proportional to the differential voltage between the first and second output terminals.

17. A protection circuit in accordance with claim 16, wherein the second input terminal of the operational amplifier is coupled to whichever of the first or second output terminals of the protection circuit is configured to carry a higher voltage during a normal operation.

18. A protection circuit in accordance with claim 16, wherein the resistor is a first resistor, the protection circuit further comprising the following:

a second and third resistor coupled in series between the first and second output terminals of the protection circuit.

19. A protection circuit in accordance with claim 1, wherein the field-effect transistor is an enhancement mode field effect transistor.