Enhanced adhesion strength between mold resin and polyimide
First Claim
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1. A method of creating an interface layer over the surface of a semiconductor device, comprising the steps of:
- providing a semiconductor device, said semiconductor device having a first and a second surface with points of electrical contact to said semiconductor device having been provided in said second surface of said semiconductor device, said semiconductor device having been provided with a layer of passivation over said second surface of said semiconductor device, openings having been created through said layer of passivation exposing said points of electrical contact to said semiconductor device;
providing a semiconductor device mounting support having a first and a second surface, contact pads having been provided in said first or said second surface of said semiconductor device mounting support;
positioning said semiconductor device over the second surface of said semiconductor device mounting support, said first surface of said semiconductor device facing said second surface of said semiconductor device mounting support;
providing conductive interconnections between said points of electrical contact provided in said second surface of said semiconductor device and contact pads provided over the second surface of said semiconductor device mounting support;
providing an underfill for said semiconductor device;
depositing an interface layer over the surface of said layer of passivation; and
patterning and etching said interface layer, creating at least one opening through said interface layer.
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Abstract
A new method is provided for the interface between a stress relieve interface layer of polyimide and a thereover created layer of mold compound. The invention provides for creating a pattern in the stress relieve layer of polyimide before the layer of mold compound is formed over the stress relieve layer of polyimide.
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Citations
17 Claims
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1. A method of creating an interface layer over the surface of a semiconductor device, comprising the steps of:
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providing a semiconductor device, said semiconductor device having a first and a second surface with points of electrical contact to said semiconductor device having been provided in said second surface of said semiconductor device, said semiconductor device having been provided with a layer of passivation over said second surface of said semiconductor device, openings having been created through said layer of passivation exposing said points of electrical contact to said semiconductor device;
providing a semiconductor device mounting support having a first and a second surface, contact pads having been provided in said first or said second surface of said semiconductor device mounting support;
positioning said semiconductor device over the second surface of said semiconductor device mounting support, said first surface of said semiconductor device facing said second surface of said semiconductor device mounting support;
providing conductive interconnections between said points of electrical contact provided in said second surface of said semiconductor device and contact pads provided over the second surface of said semiconductor device mounting support;
providing an underfill for said semiconductor device;
depositing an interface layer over the surface of said layer of passivation; and
patterning and etching said interface layer, creating at least one opening through said interface layer. - View Dependent Claims (2, 3)
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4. A method of creating protective layers for the packaging of a semiconductor device, comprising the steps of:
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providing a semiconductor device, said semiconductor device having a first and a second surface with points of electrical contact to said semiconductor device having been provided in said second surface of said semiconductor device, said semiconductor device having been provided with a layer of passivation over said second surface of said semiconductor device, openings having been created through said layer of passivation exposing said points of electrical contact to said semiconductor device;
providing a semiconductor device mounting support having a first and a second surface, contact pads having been provided in said first or said second surface of said semiconductor device mounting support;
positioning said semiconductor device over the second surface of said semiconductor device mounting support, said first surface of said semiconductor device facing said second surface of said semiconductor device mounting support;
providing conductive interconnections between said points of electrical contact provided in said second surface of said semiconductor device and contact pads provided over the second surface of said semiconductor device mounting support;
providing an underfill for said semiconductor device;
depositing an interface layer over the surface of said layer of passivation;
patterning and etching said interface layer, creating at least one opening through said interface layer; and
depositing a layer of mold compound over the surface of said interface layer, filling said at least one opening created through said interface layer. - View Dependent Claims (5)
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6. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor surface;
depositing a stress relief interface layer over said semiconductor surface;
creating at least one opening through said stress relief interface layer; and
depositing a layer of mold compound over the surface of said stress relief interface layer, filling said at least one opening created through said stress relief interface layer. - View Dependent Claims (7, 8, 9)
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10. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor surface;
depositing a layer of polyimide over the surface of said semiconductor surface;
creating at least one opening through said layer of polyimide; and
depositing a layer of mold compound over the surface of said layer of polyimide, filling said at least one opening created through said layer of polyimide. - View Dependent Claims (11, 12)
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13. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor device;
depositing a layer of polyimide over a surface of said semiconductor device; and
creating at least one opening through layer of polyimide. - View Dependent Claims (14, 15)
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16. A method for applying a stress relief interface layer over a semiconductor surface, comprising the steps of:
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providing a semiconductor device;
depositing a layer of polyimide over a surface of said semiconductor device;
creating at least one opening through said layer of polyimide; and
depositing a layer of maid compound over the surface of said layer of polyimide, filling said at least one opening created through said layer of polyimide. - View Dependent Claims (17)
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Specification