Method of manufacturing device, device, and electronic apparatus
First Claim
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1. A method of manufacturing a device comprising:
- forming individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, wherein a process of forming the silicon film comprises;
a step of applying a liquid material to form an applied film; and
converting the applied film into the silicon film with at least one of a heating and a light irradiating step; and
wherein the liquid material includes a high-order silane composition, the high-order silane being formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays.
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Abstract
A method of manufacturing a device comprising individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, comprising: a step of applying a liquid material to form an applied film; and a heat treatment and/or a light irradiating treatment of making the applied film into the silicon film, wherein, as the liquid material, a high-order silane composition comprising a high-order silence formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays is used.
68 Citations
31 Claims
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1. A method of manufacturing a device comprising:
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forming individual thin films including a silicon film, a gate insulating film, a conductive film for a gate electrode, an interlayer insulating film, and a conductive film for an electrode and wiring, wherein a process of forming the silicon film comprises;
a step of applying a liquid material to form an applied film; and
converting the applied film into the silicon film with at least one of a heating and a light irradiating step; and
wherein the liquid material includes a high-order silane composition, the high-order silane being formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of manufacturing a device, comprising:
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a step of applying a liquid material on an insulator to form an applied film;
a step of converting the applied film into a silicon film by at least one of heating and light irradiating;
a step of patterning the silicon film to form isolated regions which will become a source, a drain, and a channel;
a step of forming a gate insulating film on the silicon film;
a step of forming a gate electrode on the gate insulating film;
a step of forming a doped silicon film which will become source/drain regions;
a step of forming an interlayer insulating film over the gate electrode and the source/drain regions;
a step of opening the interlayer insulating film to form a contact hole; and
a step of forming an electrode and wiring at the contact hole, wherein the liquid material includes a high-order silane compositions, the high order silane composition being formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays.
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29. A method of manufacturing a device, comprising:
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a step of forming a dopant-containing semiconductor layer which will become source/drain regions, on an insulator;
a step of applying a liquid material on the insulator to form an applied film;
a step of converting the applied film into a silicon film by at least one of heating and light irradiating;
a step of patterning the silicon film to form an isolated region which will become a channel region connected to the source/drain regions;
a step of forming a gate insulating film over the channel and source/drain regions;
a step of forming a gate electrode on the gate insulating layer;
a step of forming an interlayer insulating film over the gate electrode;
a step of opening the interlayer insulating film to form a contact hole; and
a step of forming an electrode and wiring at the contact hole, wherein the liquid material includes a high-order silane composition, the high order silane composition being formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays.
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30. A method of manufacturing a device, comprising:
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a step of forming a gate electrode on an insulator;
a step of forming a gate insulating film on the gate electrode;
a step of applying a liquid material on the insulator to form an applied film;
a step of converting the applied film into a silicon film by at least one of heating and light irradiating;
a step of forming a dopant-containing semiconductor layer which will become source/drain regions on the silicon film; and
a step of forming an electrode and wiring at the source/drain regions, wherein the liquid material includes a high-order silane compositions, the high-order silane composition being formed by photopolymerization by irradiating a silane compound solution having a photopolymerization property with UV rays.
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31. A method of manufacturing a thin film transistor, comprising:
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providing a liquid material including a high-order silane composition, said high-order silane composition formed by irradiating a silane compound solution with light; and
converting said liquid material into a silicon film by irradiating said liquid material with light, or by heating said liquid material.
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Specification