Ferromagnetic semiconductor structure and method for forming the same

• US 6,885,065 B2
• Filed: 11/20/2002
• Issued: 04/26/2005
• Est. Priority Date: 11/20/2002
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Li, Hao, Liang, Yong, Droopad, Ravindranath, Yu, Zhiyi
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US10/299,801
• Publication Number:
  US 20040094801A1
• Time in Patent Office: 888 Days
• Field of Search: 257/347, 257/348, 257/350
• US Class Current: 257/347
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.

Claims

1. A semiconductor structure comprising:

a monocrystalline semiconductor substrate;

an amorphous oxide material in contact with the monocrystalline silicon substrate,

a monocrystalline metal oxide selected from the group consisting of alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, alkaline earth metal niobates, alkaline earth metal vanadates, alkaline earth metal tin-based perovskites, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide and mixtures thereof contacting the amorphous oxide material; and

a doped TiO_x anatase layer overlying said monocrystalline semiconductor substrate, where x≦

2.

3. The semiconductor structure of claim 1, wherein said monocrystalline semiconductor substrate comprises at least one of a Group IV and a Group III-V material.

7. The semiconductor structure of claim 1, wherein said doped TiO_x anatase layer comprises at least one dopant selected from the group consisting of at least one of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) and the oxidation phases of Cr, Mn, Fe, Co and Ni.

2. A semiconductor structure comprising:

a monocrystalline semiconductor substrate; and

a doped TiO_x anatase layer overlying said monocrystalline semiconductor substrate, where x≦

2,

said semiconductor structure further comprising an accommodating buffer layer overlying said monocrystalline semiconductor substrate and underlying said doped TiO_x anatase layer, and an amorphous interface layer overlying said monocrystalline semiconductor substrate and underlying said accommodating buffer layer.

5. The semiconductor structure of claim 2, the amorphous interface layer comprising a silicon oxide.

6. The semiconductor structure of claim 2, the amorphous interface layer having a thickness in the range of about 0.3 to about 4.0 nm.

4. A semiconductor structure comprising:

a monocrystalline semiconductor substrate; and

a doped TiO_x anatase layer overlying said monocrystalline semiconductor substrate, where x≦

2,

said semiconductor structure further comprising an accommodating buffer layer overlying said monocrystalline semiconductor substrate and underlying said doped TiO_x anatase layer, wherein said accommodating buffer layer comprises at least one material selected from the group consisting of an alkaline earth metal titanate, an alkaline earth metal zirconate, an alkaline earth metal hafnate, an alkaline earth metal tantalate, an alkaline earth metal ruthenate, an alkaline earth metal niobate, an alkaline earth metal vanadate, an alkaline earth metal tin-based perovskite, lanthanum aluminate, lanthanum scandium oxide, lanthanum oxide, gadolinium oxide, gallium nitride, aluminum nitride, boron nitride, and said materials doped with at least one of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) and the oxidation phases of Cr, Mn, Fe, Co and Ni.

8. A semiconductor device structure comprising:

a monocrystalline semiconductor substrate;

a doped TiO_x anatase layer overlying said monocrystalline semiconductor substrate, where x≦

2;

a first semiconductor component, at least a portion of which is formed in said monocrystalline semiconductor substrate; and

a second semiconductor component formed overlying said doped TiO_x anatase layer, said second semiconductor component being electrically coupled to said first semiconductor component.

9. The semiconductor device structure of claim 8, further comprising an accommodating buffer layer overlying said monocrystalline semiconductor substrate and underlying said doped TiO_x anatase layer.

10. The semiconductor device structure of claim 9, further comprising an amorphous interface layer overlying said monocrystalline semiconductor substrate and underlying said accommodating buffer layer.

11. The semiconductor device structure of claim 8, said monocrystalline semiconductor substrate comprising at least one of a Group IV and a Group III-V material.

12. The semiconductor device structure of claim 9, said accommodating buffer layer comprising at least one material selected from an alkaline earth metal titanate, an alkaline earth metal zirconate, an alkaline earth metal hafnate, an alkaline earth metal tantalate, an alkaline earth metal ruthenate, an alkaline earth metal niobate, an alkaline earth metal vanadate, an alkaline earth metal tin-based perovskite, lanthanum aluminate, lanthanum scandium oxide, lanthanum oxide, gadolinium oxide, gallium nitride, aluminum nitride, boron nitride, and said materials doped with at least one of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) and the oxidation phases of Cr, Mn, Fe, Co and Ni.

13. The semiconductor device structure of claim 9, said accommodating buffer layer having a thickness in the range of about 1 to 50 monolayers.

14. The semiconductor device structure of claim 10, the amorphous interface layer having a thickness in the range of about 0.3 to about 4.0 nm.

15. The semiconductor device structure of claim 8, said doped TiO_x anatase layer comprising a dopant selected from at least one of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni) and the oxidation phases of Cr, Mn, Fe, Go, and Ni.