Schottky diode
First Claim
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1. A Schottky diode, comprising:
- a semiconductor body having a top side;
a weakly-conductive doped well formed in said semiconductor body;
a metallic layer on said well for forming a Schottky junction with lateral edges delimiting said Schottky junction, said lateral edges being at least one of curved, ramified, and rimose;
said metallic layer being at least one layer selected from the group of thin layers consisting of;
a liner of a contact hole filling extending in a dielectric layer covering said top side, a metal silicide layer, and a liner on said metal silicide layer; and
a contact region being highly doped for a low-impedance contact connection and having a lateral boundary in said doped well, said lateral boundary having one of a lattice-shaped structure, a finger-shaped structure, a comb-shaped structure, an irregularly curved edge, a ramified edge, and a rimose edge.
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Abstract
A Schottky diode has a Schottky junction formed by a thin metal layer and/or metal silicide layer at the top side of a doped well in a semiconductor body or substrate. In contrast to the fabrication of low-impedance contacts on CMOS wells, a metal, to be precise titanium in the preferred embodiment, is applied not to a highly doped contact region but to the lightly doped semiconductor material of the doped well, for example an HV well for the fabrication of high-voltage transistors.
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Citations
7 Claims
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1. A Schottky diode, comprising:
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a semiconductor body having a top side;
a weakly-conductive doped well formed in said semiconductor body;
a metallic layer on said well for forming a Schottky junction with lateral edges delimiting said Schottky junction, said lateral edges being at least one of curved, ramified, and rimose;
said metallic layer being at least one layer selected from the group of thin layers consisting of;
a liner of a contact hole filling extending in a dielectric layer covering said top side, a metal silicide layer, and a liner on said metal silicide layer; and
a contact region being highly doped for a low-impedance contact connection and having a lateral boundary in said doped well, said lateral boundary having one of a lattice-shaped structure, a finger-shaped structure, a comb-shaped structure, an irregularly curved edge, a ramified edge, and a rimose edge. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A Schottky diode, comprising:
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a semiconductor body having a top side;
a dielectric layer covering said top side and having a contact hole formed therein;
a contact hole filling disposed in said contact hole;
a weakly-conductively doped well formed in said semiconductor body;
a metallic layer on said well for forming a Schottky junction with lateral edges delimiting said Schottky junction, said lateral edges being at least one of curved, ramified, and rimose, said metallic layer being selected from the group of layers consisting of;
a liner of said contact hole filling, a metal silicide layer, and a liner on said metal silicide layer; and
a contact region being highly doped for a low-impedance contact connection and having a lateral boundary in said doped well, said lateral boundary having one of a lattice-shaped structure, a finger-shaped structure, a comb-like structure, an irregularly curved edge, a ramified edge, and a rimose edge.
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Specification