High-frequency antenna array

• US 6,885,344 B2
• Filed: 04/25/2003
• Issued: 04/26/2005
• Est. Priority Date: 11/19/2002
• Status: Expired due to Fees

• Current Assignee: Farrokh Mohamadi
• Original Assignee: Farrokh Mohamadi
• Inventors: Mohamadi, Farrokh
• Primary Examiner(s): CHEN, SHIH CHAO
• Application Number:
  US10/423,303
• Publication Number:
  US 20040100405A1
• Time in Patent Office: 732 Days
• Field of Search: 343/700.MS, 343/767, 343/795, 343/841, 343/793
• US Class Current: 343/700.0MS
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 21/065 Patch antenna array
• CPC Class Codes: H01Q 9/045 with particular feeding means for circular polarisation H01Q9/0428

Abstract

A patch antenna is excited by a linear feedline through a cross-shaped aperture in a shield layer. The cross-shaped aperture includes a longitudinal arm running parallel to the linear feedline and a transverse arm running orthogonally to the longitudinal arm.

Claims

1. A patch antenna, comprising:

a conductive shield layer having a cross-shaped aperture, the cross-shaped aperture having a longitudinal arm and a first transverse arm;

a linear feedline adjacent a first surface of the conductive shield layer, the linear feedline being substantially centered with respect to the longitudinal arm of the cross-shaped aperture; and

a patch antenna element adjacent an opposing second surface of the conductive shield layer.

2. The patch antenna of claim 1, further comprising a semiconductor substrate, wherein the linear feedline, the patch antenna element, and the conductive shield layer are all separated by dielectric layers and are formed on the semiconductor substrate.

3. The patch antenna of claim 2, wherein the semiconductor substrate is doped adjacent the linear feedline to form a shield region.

4. The patch antenna of claim 2, further comprising a conducting narrow shield between the linear feedline and the semiconductor substrate, wherein the narrow shield and the linear feedline have substantially the same width.

5. The patch antenna of claim 1, wherein the cross-shaped aperture includes a second traverse arm.

6. The patch antenna of claim 1, wherein the patch antenna element is rectangular.

7. The patch antenna of claim 1, wherein the patch antenna element is centered with respect to the cross-shaped aperture.

8. A patch antenna, comprising:

a conductive shield layer having an aperture, the aperture having a longitudinal arm, a first transverse half-arm extending from a first side of the longitudinal arm, and a second transverse half-arm extending from the opposing side of the longitudinal arm;

a linear feedline adjacent a first surface of the conductive shield layer, the linear feedline being substantially centered with respect to the longitudinal arm of the aperture; and

a patch antenna element adjacent an opposing second surface of the conductive shield layer.

9. The patch antenna of claim 8, further comprising:

a semiconductor substrate, wherein the linear feedline, the patch antenna element, and the conductive shield layer are all separated by dielectric layers and are formed on the semiconductor substrate.

10. A method of manufacturing a patch antenna, comprising:

forming a first dielectric layer on a substrate;

(a) forming a linear feedline on the first dielectric layer;

forming a second dielectric layer on the linear feedline;

(b) forming a conductive shield having a cross-shaped aperture on the second dielectric layer, wherein the cross-shaped aperture includes a longitudinal arm and a transverse arm, the longitudinal arm being substantially centered with respect to the linear feedline;

forming a third dielectric layer on the conductive shield; and

(c) forming an patch antenna element on the third dielectric layer.

11. The method of claim 10, wherein acts (a), (b), and (c) comprise the photolithographic deposition.

12. The method of claim 10, further comprising:

forming a fourth dielectric layer on the patch antenna element; and

forming a passivation layer on the fourth dielectric layer.

13. An antenna, comprising

a semiconductor substrate;

a first dielectric layer on the substrate;

a ground plane on the first dielectric layer

a second dielectric layer on the ground plane;

a T-shaped antenna element on the second dielectric layer, the T-shaped antenna element having a longitudinal arm extending from a first end to a second end and a transverse arm at the second end; and

a via extending from the first end of longitudinal arm of the T-shaped antenna element to the substrate, wherein the via couples the T-shaped antenna element to driving circuitry formed on the substrate.

14. The antenna of claim 13, wherein the transverse arm has a length of approximately one-fourth the desired operating wavelength.

15. The antenna of claim 14, wherein the longitudinal arm has a length no greater than the desired operating wavelength.

16. The antenna of claim 13, further comprising

an additional transverse arm crossing the longitudinal arm between the first and second ends.

17. The antenna of claim 13, wherein the longitudinal arm is tapered.

18. The antenna of claim 17, wherein the taper is such that the first end of the longitudinal arm has a width less than the width of the second arm of the longitudinal arm.

19. The antenna element of claim 13, further comprising a third dielectric layer on the T-shaped antenna element;

a second T-shaped antenna element on the third dielectric layer, the second T-shaped antenna element having a longitudinal arm extending from a first end to a second end and a transverse arm at the second end of the longitudinal arm; and

a via extending from the first end of the second T-shaped antenna element to the driving circuitry on the substrate.

20. A patch antenna, comprising:

a conductive shield layer having a rectangular annular aperture;

a linear feedline adjacent a first surface of the conductive shield layer, the linear feedline being substantially centered with respect to a longitudinal axis of the rectangular annular aperture; and

a patch antenna element adjacent an opposing second surface of the conductive shield layer.

21. The patch antenna of claim 20, further comprising a semiconductor substrate, wherein the linear feedline, the patch antenna element, and the conductive shield layer are all separated by dielectric layers and are formed on the semiconductor substrate.