Magnetoresistive random access memory (MRAM) cell patterning

• US 6,887,719 B2
• Filed: 10/02/2003
• Issued: 05/03/2005
• Est. Priority Date: 03/20/2003
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Lu, Yong, Zhu, Theodore
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): GARCIA, JOANNIE A
• Application Number:
  US10/677,803
• Publication Number:
  US 20040185675A1
• Time in Patent Office: 579 Days
• Field of Search: 438/3, 438/73, 438/240, 438/396, 438/629, 438/637, 438/694, 438/700, 438/701, 438/703, 438/758, 438/FOR.212, 438/FOR.385, 438/FOR.395, 438/670, 438/951, 438/FOR.455
• US Class Current: 438/3
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10S 438/951 Lift-off

Abstract

A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from a magnetoresistive sandwich from areas other than areas that will later form MRAM cell bodies, this process forms a layer of photoresist over areas other than those areas that correspond to MRAM cell bodies. The photoresist is lifted off after the deposition of a magnetoresistive sandwich that forms the MRAM cell bodies, thereby safely removing the magnetoresistive sandwich from undesired areas while maintaining the magnetoresistive sandwich in the areas corresponding to MRAM cell bodies.

Claims

1. A process for defining a plurality of cell bodies in a magnetoresistive memory device, the process comprising:

providing a substrate assembly;

forming an insulating layer on the substrate assembly;

forming a layer of photoresist on the insulating layer;

patterning the layer of photoresist to define a plurality of openings in the photoresist, thereby exposing portions of the insulating layer through the openings in the photoresist;

using the patterned photoresist as a mask for the insulating layer;

removing material from the insulating layer that is exposed via the plurality of openings in the photoresist to form a plurality of cavities in the insulating layer, where a cavity is adapted to define a magnetoresistive cell body;

forming layers of a magnetoresistive sandwich on the patterned photoresist and in the plurality of cavities; and

removing the patterned photoresist, thereby lifting off layers of a magnetoresistive sandwich formed thereon while leaving behind layers of the magnetoresistive sandwich in the plurality of cavities of the insulating layer.

2. The process as defined in claim 1, wherein each cavity in the plurality of cavities is further adapted to define a single magnetoresistive cell body.

3. The process as defined in claim 1, further comprising:

forming a word line in the substrate assembly; and

forming the insulating layer on top of the word line.

4. The process as defined in claim 1, further comprising:

forming a word line in the substrate assembly;

forming the insulating layer on top of the word line; and

opening a window in the insulating layer to the word line such that a portion of the cell body makes electrical continuity with the word line.

5. The process as defined in claim 1, wherein the magnetoresistive sandwich corresponds to a giant magneto-resistance (GMR) sandwich.

6. The process as defined in claim 1, wherein the magnetoresistive sandwich corresponds to tunneling magneto-resistance (TMR) sandwich.

7. The process as defined in claim 1, wherein forming the magnetoresistive sandwich further comprises:

forming a hard layer of magnetic material;

forming a spacer layer; and

forming a soft layer of magnetic material.

8. The process as defined in claim 1, wherein forming the magnetoresistive sandwich further comprises:

forming a first layer of magnetic material;

forming a first spacer layer on the first layer of magnetic material;

forming a second layer of magnetic material on the first spacer layer;

forming a second spacer layer on the second layer of magnetic material; and

forming a third layer of magnetic material on the second spacer layer.

9. A process to form a magnetoresistive cell body in a magnetoresistive random access memory (MRAM) comprising:

providing a substrate assembly;

providing an insulating layer on the substrate assembly, where openings in the insulating layer define a plurality of cavities defined by the insulating layer and the substrate assembly, where a cavity is adapted to define a magnetoresistive cell;

providing photoresist on top of the insulating layer but not within the plurality of cavities;

forming layers of a magnetoresistive sandwich on the photoresist and in the plurality of cavities; and

lifting off the photoresist such that layers of the magnetoresistive sandwich formed on the photoresist are removed, and such that layers of the magnetoresistive sandwich in the plurality of cavities remain to form magnetoresistive cell bodies.

10. The process as defined in claim 9, wherein the cavity is further adapted to define a single magnetoresistive cell.

11. The process as defined in claim 9, wherein lifting off the photoresist comprises a photoresist stripping process.

12. The process as defined in claim 9, wherein lifting off the photoresist comprises a semiconductor micromachining process.

13. The process as defined in claim 9, wherein the insulating layer comprises silicon nitride.