Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device

• US 6,887,732 B2
• Filed: 05/07/2001
• Issued: 05/03/2005
• Est. Priority Date: 05/07/2001
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Gopal, Vidyut, Chinn, Jeffrey D.
• Primary Examiner(s): Ghyka, Alexander
• Application Number:
  US09/850,951
• Publication Number:
  US 20020163051A1
• Time in Patent Office: 1,457 Days
• Field of Search: 438/48, 438/50, 257/414, 257/415
• US Class Current: 438/50
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81C 1/00166 Electrodes

Abstract

Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device are described. According to one aspect, a microstructure device includes: a semiconductive substrate; a monolithic microstructure device feature coupled with the semiconductive substrate, and wherein at least a portion of the microstructure device feature is configured to move relative to the semiconductive substrate; and a conductive structure provided directly upon the microstructure device feature.

Claims

1. A method of forming a microstructure device comprising:

forming a monolithic microstructure device feature coupled with a semiconductive substrate;

providing a conductive structure directly upon at least a portion of the microstructure device feature;

releasing the microstructure device feature from the semiconductive substrate; and

wherein the conductive structure comprises at least a portion of a capacitor.

2. The method of forming a microstructure device according to claim 1 wherein the forming and the releasing form the microstructure device feature comprising a cantilevered extension from the semiconductive substrate.

3. The method of forming a microstructure device according to claim 1 wherein the forming comprises forming the microstructure device feature to comprise semiconductive material of the semiconductive substrate.

4. The method of forming a microstructure device according to claim 1 wherein the providing comprises providing the conductive structure upon a sidewall of the microstructure device feature, and further comprising providing another conductive structure directly upon a sidewall of the semiconductive substrate arranged opposite the sidewall of the microstructure device feature to form the capacitor.

5. The method of forming a microstructure device according to claim 1 wherein the providing comprises providing the conductive structure comprising titanium nitride.

6. The method of forming a microstructure device according to claim 1 wherein the providing comprises providing the conductive structure using chemical vapor deposition.

7. The method of forming a microstructure device according to claim 1 wherein the releasing occurs after the providing.

16. The method of forming a microstructure device according to claim 1 wherein the releasing comprises releasing the microstructure device feature having the conductive structure provided directly on the microstructure device feature.

17. The method of forming a microstructure device according to claim 16 wherein the conductive structure comprises titanium nitride having at least one surface outwardly exposed.

18. The method of forming a microstructure device according to claim 1 wherein the providing comprises providing the conductive structure directly upon semiconductor material of the microstructure device feature.

19. The method of forming a microstructure device according to claim 1 wherein the providing comprises providing the conductive structure directly upon bulk semiconductor material of the microstructure device feature.

20. The method of forming a microstructure device according to claim 1 wherein the providing comprises providing the conductive structure directly upon at least the portion of the microstructure device feature comprising a homogeneous structure.

8. A method of forming a microstructure device comprising:

forming a microstructure device feature coupled with a semiconductive substrate;

depositing a conductive structure upon at least a portion of the microstructure device feature using chemical vapor deposition;

releasing at least a portion of the microstructure device feature from the semiconductive substrate; and

wherein the depositing comprises depositing the conductive structure upon a sidewall of the microstructure device feature, and further comprising depositing another conductive structure using chemical vapor deposition directly upon a sidewall of the semiconductive substrate arranged opposite the sidewall of the microstructure device feature to form a capacitor.

9. The method of forming a microstructure device according to claim 8 wherein the forming comprises forming the microstructure device feature comprising a monolithic structure and wherein the depositing comprises depositing directly upon the monolithic structure.

10. The method of forming a microstructure device according to claim 8 wherein the forming and the releasing provide the microstructure device feature comprising a cantilevered extension from the semiconductive substrate.

11. The method of forming a microstructure device according to claim 8 wherein the forming comprises forming the microstructure device feature to comprise semiconductive material of the semiconductive substrate.

12. The method of forming a microstructure device according to claim 8 wherein the depositing comprises depositing titanium nitride.

13. A method of forming a microstructure device comprising:

forming a plurality of trenches within a semiconductive substrate to define a microstructure device feature, the semiconductive substrate and the microstructure device feature having opposing sidewalls;

forming respective conductive structures directly upon respective portions of the opposing sidewalls of the semiconductive substrate and the microstructure device feature;

undercutting at least a portion of the microstructure device feature to release the portion of the microstructure device feature from the substrate to permit the portion of the microstructure to move relative to the substrate; and

wherein the forming the respective conductive structures comprises forming the conductive structures to comprise a capacitor.

14. The method of forming a microstructure device according to claim 13 wherein the forming respective conductive structures comprises forming titanium nitride structures.

21. The method of forming a microstructure device according to claim 13 wherein the forming the respective conductive structures comprises forming the conductive structures to be substantially electrically insulated from one another.

15. A method of forming a MEMS device comprising:

providing a semiconductive substrate;

forming plural trenches having bottom surfaces within the semiconductive substrate to define a MEMS device feature between the trenches, the semiconductive substrate and the microstructure device feature having opposing sidewalls;

depositing a titanium nitride layer using chemical vapor deposition upon at least a portion of an upper surface of the semiconductive substrate, upon the opposing sidewalls of the semiconductive substrate and the microstructure device feature to form capacitor electrodes, and upon the bottom surfaces;

removing the titanium nitride layer upon the bottom surfaces of the trenches; and

undercutting at least a portion of the microstructure device feature to release the portion of the microstructure device feature from the substrate to permit the portion of the microstructure device feature to move relative to the substrate.

22. A method of forming a microstructure device comprising:

forming a monolithic microstructure device feature coupled with a semiconductive substrate;

providing a conductive structure directly upon at least a portion of the microstructure device feature;

releasing the microstructure device feature from the semiconductive substrate; and

wherein the providing comprises providing the conductive structure upon a sidewall of the microstructure device feature, and further comprising providing another conductive structure directly upon a sidewall of the semiconductive substrate arranged opposite the sidewall of the microstructure device feature to form a capacitor.