Method for making a semiconductor device with a high-k gate dielectric and metal layers that meet at a P/N junction

• US 6,887,800 B1
• Filed: 06/04/2004
• Issued: 05/03/2005
• Est. Priority Date: 06/04/2004
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Shah, Uday, Chau, Robert S., Doczy, Mark L., Kavalieros, Jack, Brask, Justin K., Metz, Matthew V., Datta, Suman
• Primary Examiner(s): Tran, Michael
• Assistant Examiner(s): Berry, Renee R.
• Application Number:
  US10/862,169
• Time in Patent Office: 333 Days
• Field of Search: 438/216, 438/287, 438/591, 438/778, 438/785
• US Class Current: 438/778
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 29/512 the variation being parallel to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices

Abstract

A method for making a semiconductor device is described. That method comprises modifying a first surface, and forming a high-k gate dielectric layer on an unmodified second surface.

Claims

1. A method for making a semiconductor device comprising:

forming a dielectric layer on a substrate;

forming a trench within the dielectric layer, the trench having a sidewall;

exposing at least part of the sidewall to fluorine to inhibit formation of a high-k dielectric layer on the surface of the sidewall; and

forming a high-k gate dielectric layer within the trench without forming a meaningful amount of a high-k dielectric layer on the surface of the sidewall.

2. The method of claim 1, wherein a deposition process that employs a dry etch chemistry is used to deliver fluorine to the sidewall.

3. The method of claim 2 wherein the dry etch chemistry comprises SF₈ or a fluorocarbon.

4. A method for making a semiconductor device comprising:

forming a dielectric layer on a substrate;

forming a first trench within the dielectric layer, the first trench having a first sidewall;

modifying at least part of the first sidewall;

forming a first high-k gate dielectric layer within the first trench;

forming a first metal layer on the first high-k gate dielectric layer;

forming a second trench within the dielectric layer, the second trench having a second sidewall;

modifying at least part of the second sidewall;

forming a second high-k gate dielectric layer within the second trench; and

forming a second metal layer on the second high-k ate dielectric layer;

wherein the first metal layer and the second metal layer meet at a P/N junction.

5. The method of claim 4 further comprising:

removing a first polysilicon containing layer to form the first trench;

removing a first part of a dummy dielectric layer after modifying the first sidewall and before forming the first high-k gate dielectric layer within the first trench;

removing a second polysilicon containing layer to form the second trench; and

removing a second part of the dummy dielectric layer after modifying the second sidewall and before forming the second high-k gate dielectric layer within the second trench.

6. The method of claim 4 wherein at least part of the first sidewall is modified by exposing it to fluorine, and wherein at least part of the second sidewall is modified by exposing it to fluorine.