Gas-assisted rapid thermal processing

• US 6,887,803 B2
• Filed: 11/08/2001
• Issued: 05/03/2005
• Est. Priority Date: 11/08/2001
• Status: Expired due to Fees

• Current Assignee: WaferMasters, Inc.
• Original Assignee: WaferMasters, Inc.
• Inventors: Yoo, Woo Sik
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US10/005,827
• Publication Number:
  US 20030087215A1
• Time in Patent Office: 1,272 Days
• Field of Search: 219/390, 219/405, 118/725, 118/50.1, 438/795, 438/798, 438/799, 438/530
• US Class Current: 438/795
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Claims

1. A system for processing a semiconductor device, the system comprising:

a processing chamber heated by heating elements;

a first plate positioned within said processing chamber and defining a first internal cavity configured to receive a first gas through a first passage into said first internal cavity at a first temperature and to emit said first gas from said first internal cavity at a second temperature through a second passage; and

a second plate disposed adjacent to said first plate, said first plate and said second plate provided between said heating elements and defining a processing area therebetween, said second plate defining a second internal cavity configured to receive a second gas through a first passage into said second internal cavity at a first temperature and to emit said second gas from said second internal cavity at a second temperature through a second passage, said first emitted gas and said second emitted gas varying the temperature of said processing area.

2. The system of claim 1, wherein said second passage comprises a plurality of holes defined on a surface of said first and said second plates.

3. The system of claim 1, wherein said first plate and said second plate comprise a heat source for heating said plate to a preselected temperature.

4. The system of claim 1, wherein said first gas is taken from the group consisting of N₂, He, H₂, O₂, Ar and gas mixtures containing He, H₂, O₂, Ar and N₂.

5. The system of claim 1, wherein said internal cavity further comprises a buffer to disperse said first gas throughout said internal cavity.

6. A system for water processing comprising:

a chamber heated by heating elements; and

a first heatable plate and a second heatable plate positioned between said heating elements within said chamber, and defining a processing area therebetween, each of said heatable plates including;

an internal cavity defining an internal wall and configured to receive a gas;

means for heating said internal wall to a preselected temperature; and

an outlet portion defining a plurality of holes for emitting said gas to said processing area;

said gas varying the temperature of said processing area.

7. The system of claim 6, wherein said gas is taken from the group consisting of He, H₂, O₂, Ar, N₂ and gas mixtures containing He, H₂, O₂, Ar, and N₂.

8. The system of claim 6, wherein said internal cavity further comprises a buffer to disperse said first gas throughout said internal cavity.