Multi-cascode transistors
First Claim
1. A cascode power circuit for providing improved withstand voltage for radio frequency switching transistors comprising:
- three or more transistors, each having a control terminal and two conduction terminals, wherein the conduction terminals are coupled in series between two output terminals;
a radio frequency signal input coupled to the control terminal for the first transistor; and
two or more control voltage sources, each coupled to a corresponding control terminal for the remaining transistors, the control voltage sources maintaining the voltage across each corresponding transistor to a level below a breakdown voltage level;
wherein a voltage drop across the three or more transistors exceeds a withstand voltage of any one of the three or more transistors, and wherein the control voltage sources are magnetically coupled to the signal input.
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Accused Products
Abstract
A cascode circuit with improved withstand voltage is provided. The cascode circuit includes three or more transistors, such as MOSFET transistors. Each transistor has a control terminal, such as a gate, and two conduction terminals, such as a drain and a source. The conduction terminals are coupled in series between two output terminals, such as where the drain of each transistor is coupled to the source of another transistor. A signal input is provided to the gate for the first transistor. Two or more control voltage sources, such as DC bias voltages, are provided to the gate of the remaining transistors. The DC bias voltages are selected so as to maintain the voltage across each transistor to a level below a breakdown voltage level.
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Citations
18 Claims
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1. A cascode power circuit for providing improved withstand voltage for radio frequency switching transistors comprising:
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three or more transistors, each having a control terminal and two conduction terminals, wherein the conduction terminals are coupled in series between two output terminals;
a radio frequency signal input coupled to the control terminal for the first transistor; and
two or more control voltage sources, each coupled to a corresponding control terminal for the remaining transistors, the control voltage sources maintaining the voltage across each corresponding transistor to a level below a breakdown voltage level;
wherein a voltage drop across the three or more transistors exceeds a withstand voltage of any one of the three or more transistors, and wherein the control voltage sources are magnetically coupled to the signal input. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A cascode circuit for providing improved withstand voltage for radio frequency switching transistors comprising:
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two or more transistors, each having a control terminal and two conduction terminals, wherein the conduction terminals are coupled in series between two output terminals;
a radio-frequency signal input coupled to the control terminal for the first transistor, and one or more control voltage circuits, each coupled to a corresponding control terminal and to one or more of the conduction terminals for the remaining transistors, the control voltage circuits maintaining the voltage across each corresponding transistor to a level below a breakdown voltage level;
wherein a peak voltage across the three or more transistors exceeds a withstand voltage of anyone of the three or more transistors, and wherein the control voltage sources are magnetically coupled to the signal input. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for providing increased withstand voltage capability for radio frequency switching transistors comprising:
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connecting three or more transistors in series between two output terminals;
providing a radio frequency input signal to control input of one of the transistors;
providing a control voltage to the control input of each of the remaining transistors so as to maintain the voltage across each of the transistors to a level below a breakdown voltage;
wherein a peak voltage across the three or more transistors exceeds an operating voltage of any one of the three or more transistors; and
wherein the control voltage sources are magnetically coupled to the radio frequency input signal. - View Dependent Claims (17, 18)
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Specification