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Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

  • US 6,888,742 B1
  • Filed: 08/28/2002
  • Issued: 05/03/2005
  • Est. Priority Date: 08/28/2002
  • Status: Expired due to Term
First Claim
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1. A magnetic element comprising:

  • a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction;

    a nonmagnetic intermediate layer;

    a free layer, the nonmagnetic intermediate layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π

    radians;

    wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

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