Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

• US 6,888,742 B1
• Filed: 08/28/2002
• Issued: 05/03/2005
• Est. Priority Date: 08/28/2002
• Status: Expired due to Term

• Current Assignee: Samsung Semiconductor Incorporated (Samsung Electronics Co. Ltd.)
• Original Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Inventors: Nguyen, Paul P., Huai, Yiming
• Primary Examiner(s): Lam, David
• Application Number:
  US10/231,430
• Time in Patent Office: 979 Days
• Field of Search: 365/158, 365/145, 365/171, 365/117, 365/65
• US Class Current: 365/158
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence

Abstract

A method and system for providing a magnetic element capable of being written in a reduced time using the spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a ferromagnetic pinned layer, a nonmagnetic intermediate layer, and a ferromagnetic free layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic intermediate layer resides between the pinned layer and the free layer. The free layer has a magnetization with an easy axis in a second direction. The first direction is in the same plane as the second direction and is oriented at an angle with respect to the second direction. This angle is different from zero and π radians. The magnetic element is also configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

Claims

1. A magnetic element comprising:

a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction;

a nonmagnetic intermediate layer;

a free layer, the nonmagnetic intermediate layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π

radians;

wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

2. The magnetic element of claim 1 wherein the angle is 3π

/4 radians.

3. The magnetic element of claim 1 wherein the nonmagnetic intermediate layer is an insulating barrier layer.

4. The magnetic element of claim 1 wherein the nonmagnetic intermediate layer is a nonmagnetic spacer layer that is conductive.

5. The magnetic element of claim 4 further comprising:

a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer;

a second pinned layer, the second pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the barrier layer being between the free layer and the second pinned layer.

6. The magnetic element of claim 5 wherein the first direction is opposite to the third direction.

7. The magnetic element of claim 6 wherein the angle is 3π

/4 radians.

8. The magnetic element of claim 7 further comprising:

a first antiferromagnetic layer adjacent to the first pinncd layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and

a second antiferromagnctic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the third magnetization of the second pinned layer.

9. The magnetic element of claim 5 wherein the first antiferromagnetic layer and the second antiferromagnetic layer include PtMn.

10. The magnetic element of claim 8 wherein the first antiferromagnetic layer has a first blocking temperature, the second antiferromagnetic layer has a second blocking temperature, the second blocking temperature being different from the first blocking temperature.

11. The magnetic element of claim 4 wherein the first pinned layer is a synthetic pinned layer.

12. The magnetic element of claim 4 wherein the second pinned layer is a synthetic pinned layer.

13. The magnetic element of claim 7 wherein the magnetic element has a width of less than or equal to 200 nm.

14. The magnetic element of claim 11 wherein the magnetic element has a width of approximately 100 nm.

15. The magnetic element of claim 14 wherein the magnetic element has a depth of approximately 50 nm.

16. The magnetic element of claim 4 wherein the free layer is a synthetic free layer.

17. A magnetic memory device comprising:

a plurality of magnetic cells including a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a nonmagnetic intermediate layer, and a free layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction, the nomnagnetic intermediate layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π

radians, wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element, each of the plurality of magnetic elements being configured such that the second magnetization of the free layer can change direction due to spin transfer when a write current is passed through the magnetic element;

a plurality of row lines coupled to the plurality of magnetic cells; and

a plurality of column lines coupled with the plurality of cells, the plurality of row lines and the plurality of column lines for selecting a portion of the plurality of magnetic cells for reading and writing.

18. The magnetic memory device of claim 17 wherein the nonmagnetic intermediate layer is an insulating barrier layer.

19. The magnetic memory device of claim 17 wherein the nonmagnetic intermediate layer is a nonmagnetic spacer layer that is conductive.

20. The magnetic memory device of claim 17 wherein the angle is 3π

/4 radians.

21. The magnetic memory device of claim 19 further comprising:

a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer;

a second pinned layer, the second pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the barrier layer being between the free layer and the second pinned layer.

22. The magnetic memory device of claim 19 wherein the magnetic memory is configured to write to the portion of the plurality of magnetic cells without requiring the use of additional lines.

23. The magnetic memory device of claim 19 wherein the first direction of the first magnetization of the first pinned layer is opposite to the second direction of the third magnetization of the second pinned layer.

24. The magnetic memory device of claim 19 wherein each of the plurality of magnetic elements further include:

a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and

a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the third magnetization of the second pinned layer.

25. A method for utilizing a magnetic memory comprising the steps of:

(a) in a write mode, writing to a first portion of a plurality of magnetic cells by driving a write current in a CPP configuration through the a first portion of a plurality of magnetic elements, each of the plurality of magnetic elements including a first pinned layer, a nonmagnetic intermediate layer, and a free layer, the first pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction, the nonmagnetic intermediate layer residing between the first pinned layer and the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π

radians, wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element, each of the plurality of magnetic elements being configured such that the second magnetization of the free layer can change direction due to spin transfer when a write current is passed through the magnetic element;

(b) in a read mode, reading a signal from a second portion of the plurality of cells.

26. The method of claim 25 wherein the angle is 3π

/4 radians.

27. The method of claim 25 wherein the reading step (b) is performed using a read current two to ten times smaller than the write current to prevent switching during reading.

28. The method of claim 25 wherein the nonmagnetic intermediate layer is an insulating barrier layer.

29. The method of claim 25 wherein the nonmagnetic intermediate layer is a nonmagnetic spacer layer that is conductive.

30. A method for providing magnetic element comprising the steps of:

(a) providing a first pinned layer, the pinned layer being ferromagnetic and having a first magnetization, the first magnetization being pinned in a first direction;

(b) providing a nonmagnetic intermediate layer;

(c) providing a free layer, the nonmagnetic intermediate layer residing between the first pinned layer amd the free layer, the free layer being ferromagnetic and having a second magnetization with an easy axis in a second direction, the first direction being in the same plane as the second direction and oriented at an angle with respect to the second direction, the angle being different from zero and π

radians;

wherein the magnetic element is configured to allow the second magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

31. The method of claim 30 wherein the nonmagnetic intermediate layer is an insulating barrier layer.

32. The method of claim 30 wherein the nonmagnetic intermediate layer is a nonmagnetic spacer layer that is conductive.

33. The method of claim 30 wherein the angle is 3π

/4 radians.

34. The method of claim 32 further comprising the steps of:

(d) providing a barrier layer, the barrier layer being an insulator and having a thickness that allows tunneling through the barrier layer;

(e) providing a second pinned layer, the second pinned layer being ferromagnetic and having a third magnetization pinned in a third direction, the barrier layer being between the free layer and the second pinned layer.

35. The method of claim 34 wherein the first direction is opposite to the second direction.

36. The method of claim 35 further comprising the steps of:

(f) providing a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer; and

(g) providing a second antiferromagnetic layer adjacent to the second pinned layer, the second antiferromagnetic layer for pinning the third magnetization of the second pinned layer.

37. The method of claim 30 further comprising the step of:

(d) providing a first antiferromagnetic layer adjacent to the first pinned layer, the first antiferromagnetic layer for pinning the first magnetization of the first pinned layer.

38. The method of claim 37 wherein the first antiferromagnetic layer-providing step (d) further includes the step of:

(d1) annealing the first antiferromagnetic layer in a magnetic field to orient the first antiferromagnetic layer and the first magnetization of the first pinned layer to be oriented in the first direction.

39. The method of claim 30 further comprising the step of:

(e) patterning the first pinned layer in a first geometry such that the first pinned layer has a second easy axis in the first direction prior to providing the nonmagnetic intermediate layer and the free layer.

40. The method of claim 30 wherein the free layer providing step (c) further includes the step of:

(c1) patterning the free layer and the nonmnagnetic spacer layer in a second geometry such that the free layer has the easy axis in the second direction.

41. The method of claim 30 wherein the first pinned layer-providing step (a) further includes the step of:

(a1) providing the first pinned layer with a first magnetic anisotropy less than a second magnetic anisotropy of the free layer, the method further comprising the step of;

(e) orienting the magnetization of the pinned layer in the first direction by applying an external magnetic field sufficient to orient the pinned layer in the first direction without pinning the free layer in the first direction.

42. The method of claim 36 further comprising the step of:

(h) annealing the magnetic element so that the first magnetization of the first pinned layer is oriented at the angle with respect to the easy axis of the free layer, while the third magnetization of the second pinned layer is parallel to the easy axis.