Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
First Claim
Patent Images
1. A nonvolatile memory array, comprising:
- an array of nonvolatile memory devices;
at least one driver circuit; and
a substrate;
wherein the at least one driver circuit is not located in a bulk monocrystalline silicon substrate, wherein the array of nonvolatile memory devices comprises an array of PROMs, EPROMS or EEPROMs, wherein the array of nonvolatile memory devices comprises a monolithic three dimensional array of memory devices.
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Abstract
A nonvolatile memory array is provided. The array includes an array of nonvolatile memory devices, at least one driver circuit, and a substrate. The at least one driver circuit is not located in a bulk monocrystalline silicon substrate. The at least one driver circuit may be located in a silicon on insulator substrate or in a compound semiconductor substrate.
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Citations
20 Claims
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1. A nonvolatile memory array, comprising:
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an array of nonvolatile memory devices;
at least one driver circuit; and
a substrate;
wherein the at least one driver circuit is not located in a bulk monocrystalline silicon substrate, wherein the array of nonvolatile memory devices comprises an array of PROMs, EPROMS or EEPROMs, wherein the array of nonvolatile memory devices comprises a monolithic three dimensional array of memory devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A nonvolatile memory my, comprising:
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an array of nonvolatile memory devices;
at least one driver circuit; and
a substrate;
wherein the at least one driver circuit is not located in a bulk monocrystalline silicon substrate, wherein the array of nonvolatile memory devices comprises an array of PROMs, EPROMs or EEPROMs, wherein the array comprises;
a first plurality of spaced-apart conductors disposed at a first height above the substrate in a first direction; and
a second plurality of spaced-apart rail-stacks disposed above the first height in a second direction different from the first direction, each rail-stack including a semiconductor film of a first conductivity type in contact with said first plurality of spaced-apart conductors, a local charge storage film disposed above the semiconductor film and a conductive film disposed above the local charge storage film. - View Dependent Claims (15)
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16. A nonvolatile memory array, comprising:
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a monocrystalline silicon substrate;
at least one driver circuit formed above the substrate; and
an array of nonvolotile memory devices formed above the substrate, wherein the array of nonvolotile memory devices comprises a monolithic three dimentional array of memory devices. - View Dependent Claims (17, 18, 19, 20)
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Specification