Plasma processing method using spectroscopic processing unit

• US 6,890,771 B2
• Filed: 09/11/2003
• Issued: 05/10/2005
• Est. Priority Date: 11/29/2001
• Status: Expired due to Fees

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.), Hitachi, Ltd.
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.), Hitachi, Ltd.
• Inventors: Fujii, Takashi, Usui, Tatehito, Kaji, Tetsunori, Kimura, Shizuaki
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US10/659,394
• Publication Number:
  US 20040045933A1
• Time in Patent Office: 607 Days
• Field of Search: 156/345.24, 156/345.25, 156/345.27, 156/348.28, 156/345.26, 156/345.28, 118/712, 118/713, 118/715, 438/9, 216/60, 216/67
• US Class Current: 438/9
• CPC Class Codes: G01L 21/30 by making use of ionisation effects
• CPC Class Codes: G01N 21/73 using plasma burners or torches
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

A plasma processing method using a spectroscopic processing unit. The method includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition, and terminating the predetermined plasma process.

Claims

1. A plasma processing method using a spectroscopic processing unit, comprising the steps of:

a) separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra;

b) converting said component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period;

c) converting said analogue signals into digital signals on a predetermined-period basis;

d) adding, for each of at least two predetermined plural kinds of materials within said vacuum process chamber, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the material;

e) determining discriminatively an end point of a predetermined plasma process on the basis of said added signals obtained in said step d); and

f) terminating said predetermined plasma process.

2. A plasma processing method according to claim 1, wherein said step d) includes a substep of:

d1) adding, as to one of said plural kinds of materials which intensities of emission spectra decrease at substantially the end point of the predetermined plasma process, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the one material;

or

d2) adding, as to another of said plural kinds of materials which intensities of emission spectra increase at substantially the end point of the predetermined plasma process, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the another material.

3. A plasma processing method according to claim 2, wherein said step d) further includes a substep of:

d3) adding, as to still another of said plural kinds of materials which intensities of emission spectra do not substantially change before and after the end point of the predetermined plasma process, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the still anther material.

4. A plasma processing method according to claim 3, wherein said step d) further includes a substep of:

d4) dividing said added signals obtained in said step d1) by said added signals obtained in said step d3), or

d5) dividing said added signals obtained in said step d2) by said added signals obtained in said step d3).

5. A plasma processing method according to claim 1, wherein said predetermined plasma process is an etching process.

6. A plasma processing method according to claim 1, wherein said step c) includes substeps of:

c1) adding together analogue signals of the different wavelength components;

c2) converting a plurality of plural added signals into digital quantities on a predetermined-period basis to obtain said digital signals; and

c3) digitally adding said digital signals obtained in said step c2) a plural number of times on a plural-signal basis, wherein in said step d), for each of the at least two of predetermined plural kinds of materials within said vacuum process chamber, said digitally added digital signals of the set of wavelengths corresponding to the set of emission spectrum wavelengths intrinsic to the material are added.

7. A plasma processing method using a spectroscopic processing unit, comprising the steps of:

a) separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra;

b) converting said component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period;

c) converting said analogue electric signals into digital signals on a predetermined-period basis;

d) adding, for each of at least two predetermined plural kinds of materials within said vacuum process chamber, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the material;

e) performing an adding or subtracting operation between said added signals obtained in step d) as to said at least two of said predetermined plural kinds of materials;

f) determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from said step e); and

g) terminating said predetermined plasma process.

8. A plasma processing method according to claim 7, wherein said step d) includes a substep of:

d1) adding, as to one of said plural kinds of materials which intensities of emission spectra decrease at substantially the end point of the predetermined plasma process, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the one material;

or

d2) adding, as to another of said plural kinds of materials which intensities of emission spectra increase at substantially the end point of the predetermined plasma process, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the another material.

9. A plasma processing method according to claim 8, wherein said step d) further includes a substep of:

d3) adding, as to still another of said plural kinds of materials which intensities of emission spectra do not substantially change before and after the end point of the predetermined plasma process, said digital signals of a set of wavelengths corresponding to a set of emission spectrum wavelengths intrinsic to the still anther material.

10. A plasma processing method according to claim 9, wherein said step e) further includes a substep of:

d4) dividing said added signals obtained in said step d1) by said added signals obtained in said step d3), or

d5) dividing said added signals obtained in said step d2) by said added signals obtained in said step d3).

11. A plasma processing method according to claim 7, wherein said step e) includes a substep of:

e1) performing an adding process between said added signals obtained in said step d) as to one of said plural kinds of materials which intensities of emission spectra decrease at substantially the end point of the predetermined plasma process and said added signals obtained in said step d) as to another of said plural kinds of materials which intensities of emission spectra decrease at substantially the end point of the predetermined plasma process;

or

e2) performing an adding process between said added signals obtained in said step d) as to one of said plural kinds of materials which intensities of emission spectra increase at substantially the end point of the predetermined plasma process and said added signals obtained in said step d) as to another of said plural kinds of materials which intensities of emission spectra increase at substantially the end point of the predetermined plasma process;

or

e3) performing a subtracting process between said added signals obtained in said step d) as to one of said plural kinds of materials which intensities of emission spectra decrease at substantially the end point of the predetermined plasma process and said added signals obtained in said step d) as to another of said plural kinds of materials which intensities of emission spectra increase at substantially the end point of the predetermined plasma process.

12. A plasma processing method according to claim 7, wherein said predetermined plasma process is an etching process.

13. A plasma processing method according to claim 7, wherein said step c) includes substeps of:

c1) adding together analogue signals of the different wavelength components;

c2) converting a plurality of plural added signals into digital quantities on a predetermined-period basis to obtain said digital signals; and

c3) digitally adding said digital signals obtained in said step c2) a plural number of times on a plural-signal basis, wherein in said step d), for each of the at least two of predetermined plural kinds of materials within said vacuum process chamber, said digitally added digital signals of the set of wavelengths corresponding to the set of emission spectrum wavelengths intrinsic to the material are added.