Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
First Claim
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1. A method of fabricating a p-n heterojunction device utilizing HVPE techniques and comprising the steps of:
- locating a Ga metal in a first source zone of a reaction chamber;
locating an Al metal in a second source zone of said reaction chamber;
locating at least one acceptor impurity metal in a third source zone of said reaction chamber;
locating a Si source in a fourth source zone of said reaction chamber;
locating a Zn source in a fifth source zone of said reaction chamber;
locating a substrate within a growth zone of said reaction chamber;
heating said substrate to a first temperature, wherein said first temperature is greater than 900°
C.;
heating said Ga metal to a second temperature, wherein said second temperature is in the range of 750°
C. to 1050°
C.;
heating said Al metal to a third temperature, wherein said third temperature is in the range of 700°
C. to 850°
C.;
heating said at least one acceptor impurity metal to a fourth temperature, wherein said fourth temperature is in the range of 250°
C. to 1050°
C.;
introducing a halide reaction gas into said first source zone to form a gallium chloride compound;
introducing said halide reaction gas into said second source zone to form an aluminum trichloride compound;
transporting said gallium chloride compound to said growth zone;
transporting said Si to said growth zone;
transporting said Zn to said growth zone;
introducing a reaction gas into said growth zone, said reaction gas containing nitrogen;
growing an n-type GaN layer on said substrate, said n-type GaN layer formed by said reaction gas reacting with said gallium chloride compound, wherein said n-type GaN layer is co-doped with said Si and said Zn;
transporting said aluminum trichioride compound to said growth zone;
transporting said at least one acceptor impurity metal to said growth zone; and
growing a p-type AlGaN layer on said n-type GaN layer, said p-type AlGaN layer formed by said reaction gas reacting with said gallium chloride compound and said aluminum trichioride compound, wherein said p-type AlGaN layer incorporates said at least one acceptor impurity metal.
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Abstract
A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
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Citations
29 Claims
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1. A method of fabricating a p-n heterojunction device utilizing HVPE techniques and comprising the steps of:
-
locating a Ga metal in a first source zone of a reaction chamber;
locating an Al metal in a second source zone of said reaction chamber;
locating at least one acceptor impurity metal in a third source zone of said reaction chamber;
locating a Si source in a fourth source zone of said reaction chamber;
locating a Zn source in a fifth source zone of said reaction chamber;
locating a substrate within a growth zone of said reaction chamber;
heating said substrate to a first temperature, wherein said first temperature is greater than 900°
C.;
heating said Ga metal to a second temperature, wherein said second temperature is in the range of 750°
C. to 1050°
C.;
heating said Al metal to a third temperature, wherein said third temperature is in the range of 700°
C. to 850°
C.;
heating said at least one acceptor impurity metal to a fourth temperature, wherein said fourth temperature is in the range of 250°
C. to 1050°
C.;
introducing a halide reaction gas into said first source zone to form a gallium chloride compound;
introducing said halide reaction gas into said second source zone to form an aluminum trichloride compound;
transporting said gallium chloride compound to said growth zone;
transporting said Si to said growth zone;
transporting said Zn to said growth zone;
introducing a reaction gas into said growth zone, said reaction gas containing nitrogen;
growing an n-type GaN layer on said substrate, said n-type GaN layer formed by said reaction gas reacting with said gallium chloride compound, wherein said n-type GaN layer is co-doped with said Si and said Zn;
transporting said aluminum trichioride compound to said growth zone;
transporting said at least one acceptor impurity metal to said growth zone; and
growing a p-type AlGaN layer on said n-type GaN layer, said p-type AlGaN layer formed by said reaction gas reacting with said gallium chloride compound and said aluminum trichioride compound, wherein said p-type AlGaN layer incorporates said at least one acceptor impurity metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification