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Method of depositing dielectric materials in damascene applications

  • US 6,890,850 B2
  • Filed: 07/15/2002
  • Issued: 05/10/2005
  • Est. Priority Date: 12/14/2001
  • Status: Expired due to Fees
First Claim
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1. A method for processing a substrate, comprising:

  • depositing a first barrier layer by a process comprising;

    introducing a processing gas consisting essentially carbon dioxide, an inert gas, and an oxygen-free organosilicon compound to the processing chamber; and

    reacting the processing gas to deposit an oxygen-doped silicon carbide on a surface of the substrate, wherein the oxygen-doped silicon carbide has an oxygen content of about 15 atomic percent or less;

    depositing a first dielectric layer on the first barrier layer;

    depositing a second barrier layer on the first dielectric layer; and

    then etching feature definitions in the second barrier layer to expose the first dielectric layer.

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