Wavelength-selective photonics device

• US 6,891,869 B2
• Filed: 12/14/2001
• Issued: 05/10/2005
• Est. Priority Date: 06/14/1999
• Status: Active Grant

• Current Assignee: Quantum Semiconductor LLC
• Original Assignee: Quantum Semiconductor LLC
• Inventors: Augusto, Carlos J. R. P.
• Primary Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US10/023,430
• Publication Number:
  US 20020101895A1
• Time in Patent Office: 1,243 Days
• Field of Search: 372 43- 50, 257/99, 257/190, 359/263
• US Class Current: 372/43.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/11 characterised by two potential barriers, e.g. bipolar phototransistors
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons of different energies are selectively absorbed in or emitted by the active-layers. Contact means are arranged separately on the lateral sides of each layer or set of layers having the same parameters for extracting charge carriers generated in the photon-absorbing layers and/or injecting charge carriers into the photon-emitting layers. The device can be used for various applications: wavelength-selective multi-spectral solid-state displays, image-sensors, light-valves, light-emitters, etc. It can also be used for multiple-band gap solar-cells. The architecture of the device can be adapted to produce coherent light.

Claims

1. An opto-electronic device comprising:

a crystalline substrate;

an insulator layer coextensive with a top surface of the crystalline substrate;

an epitaxial stack of alternating photon-active semiconductor layers and electrical-insulator layers above a central part of the top surface of the insulator layer;

first contact means formed on a first edge part of the top surface of the insulator layer;

said first contact means extending parallel with a direction of epitaxial deposition and being in contact with one side wall of at least one active semiconductor layer for extracting electrons from or injecting electrons into the active semiconductor layer(s) associated therewith;

second contact means formed on a second edge part of the top surface of the insulator layer; and

said second contact means extending parallel with the direction of epitaxial deposition and being in contact with a second side wall of at least one active semiconductor layer for extracting holes from or injecting holes into the active semiconductor layer(s) associated therewith.

2. An opto-electronic device as claimed in claim 1, wherein each active semiconductor layer is comprised of a silicon-compatible alloy compound.

3. An opto-electronic device as claimed in claim 1, wherein said first and second contact means each comprise a conductor part and an insulator part extending parallel with the direction of epitaxial deposition of the epitaxial stack.

4. An opto-electronic device as claimed in claim 3, wherein the insulator part of each of said first and second contact means has a thickness defined depending on whether tunneling is desirable or not.

5. An opto-electronic device as claimed in claim 1, wherein the active semiconductor layers include quantum wells.

6. An opto-electronic device comprising:

a crystalline substrate;

an insulator layer coextensive with a top surface of the crystalline substrate;

an epitaxial stack of alternating photon-active semiconductor layers and electrical-insulator layers above a central part of the top surface of the insulator layer;

said epitaxial stack comprising at least two successive different groups of alternating photon-active semiconductor and insulator layers;

the layers in the different groups having a different length and having a different band-gap;

first contact means associated with each of said groups and formed on a first edge part of a top surface of the insulator layer underneath each associated group of layers in the epitaxial stack;

each of said first contact means extending parallel with a direction of epitaxial deposition;

each of said first contact means being in contact with one side wall of the active semiconductor layers in said associated group for extracting electrons from or injecting electrons into the active semiconductor layers in said associated group;

each of said first contact means being separated from an adjacent first contact means by an insulator spacer;

second contact means associated with each of said groups and formed on a second edge part of the top surface of the insulator layer underneath each associated group of layers;

each of said second contact means extending parallel with the direction of epitaxial deposition;

each of said second contact means being in contact with a second side wall of the active semiconductor layers in said associated group for extracting holes from or injecting holes into the active semiconductor layers in said associated group; and

each of said second contact means being separated from an adjacent second contact means by an insulator spacer.

7. An opto-electronic device as claimed in claim 6, wherein each active semiconductor layer is comprised of a silicon-compatible alloy compound.

8. An opto-electronic device as claimed in claim 6, wherein the active semiconductor layers in the successive groups are arranged with pre-selected monotically increasing band-gaps.

9. An opto-electronic device as claimed in claim 6, wherein said first and second contact means each comprise a conductor part and an insulator part extending parallel with the direction of epitaxial deposition of the epitaxial stack.

10. An opto-electronic device as claimed in claim 9, wherein the insulator part of each of said first and second contact means has a thickness defined depending on whether tunneling is desirable or not.

11. An opto-electronic device as claimed in claim 6, wherein the active semiconductor layers include quantum wells.