CVD apparatus

• US 6,892,669 B2
• Filed: 05/24/2001
• Issued: 05/17/2005
• Est. Priority Date: 02/26/1998
• Status: Expired due to Term

• Current Assignee: Anelva Corporation (Canon Inc.)
• Original Assignee: Anelva Corporation (Canon Inc.)
• Inventors: Nogami, Hiroshi, Xu, Ge
• Primary Examiner(s): Hassanzadel, P.
• Assistant Examiner(s): MACARTHUR, SYLVIA
• Application Number:
  US09/863,338
• Publication Number:
  US 20010042512A1
• Time in Patent Office: 1,454 Days
• Field of Search: 118/715, 118/723.IE, 118/723.R, 118/723.E, 118/723.AN, 118/723.I, 118/723.IR, 156/345.43, 156/345.47, 156/345.33, 156/345.34, 315/111.21
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vessel 12. The vacuum vessel has a partitioning wall section 14 for separating the inside thereof into a plasma-generating space 15 and a film deposition process space 16. The partitioning wall section has a plurality of through-holes 25 and diffusion holes 26. An interior space 24 receives the silane or the like fed into the film deposition process space through diffusion holes 16. The radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL/D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.

Claims

1. A CVD apparatus comprising:

a vacuum vessel having an inside in which plasma is produced to generate active species, and film deposition is performed on a substrate by using the active species and a reactive gas;

an electrically-conductive partitioning wall section formed in the vacuum vessel for separating the inside thereof into two chambers;

a first one of the two chambers is formed as a plasma-generating space and contains a radio-frequency electrode;

a second one of the two chambers is formed as a film deposition process space and contains a substrate support mechanism for mounting a substrate;

the partitioning wall section includes a plurality of through-holes to allow communication between the plasma-generating space and the film deposition process space;

the partitioning wall section includes an interior space separated from the plasma-generating space and communicating with the film deposition process space through a plurality of diffusion holes;

means for delivering into the interior space a reactive gas supplied from outside the vacuum vessel, whereby the reactive gas thus supplied into the interior space is fed to the film deposition process space through the plurality of diffusion holes;

means for delivering a first gas to the plasma-generating space so that it passes through the through-holes at velocity u such that an equation uL/D<

1 is satisfied where L represents an effective length of the through-holes and D represents an inter-diffusion coefficient between the first gas and the reactive gas; and

means for supplying an RF power to the radio-frequency electrode for generating a plasma discharge in the plasma-generating space, by which the active species produced in the plasma-generating space are fed into the film deposition process space via the plurality of through-holes formed in the partitioning wall section.

2. The CVD apparatus as stated in claim 1, wherein the diffusion holes satisfy the requirements of uL/D>

1, where u represents the gas flow velocity in the holes, L represents the effective hole length, and D represents the inter-diffusion coefficient.

3. The CVD apparatus as stated in claim 1, wherein the interior space of the partitioning wall section comprises a diffusing structure of at least two layers for diffusing the reactive gas uniformly in the interior space.

4. The CVD apparatus as stated in claim 2, wherein the interior space of the partitioning wall section comprises a diffusing structure of at least two layers for diffusing the reactive gas uniformly in the interior space.

5. A CVD apparatus as stated in claim 1, further comprising an RF power supply for feeding a cleaning RF power and means for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

6. A CVD apparatus as stated in claim 2, further comprising an RF power supply for feeding a cleaning RF power and means for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

7. A CVD apparatus as stated in claim 3, further comprising an RF power supply for feeding a cleaning RF power and means for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

8. A CVD apparatus as stated in claim 4, further comprising an RF power supply for feeding a cleaning RF power and means for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

9. A CVD apparatus as stated in claim 1, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

10. A CVD apparatus as stated in claim 2, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

11. A CVD apparatus as stated in claim 3, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

12. A CVD apparatus as stated in claim 4, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

13. A CVD apparatus as stated in claim 5, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

14. A CVD apparatus as stated in claim 6, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

15. A CVD apparatus as stated in claim 1, wherein the radio-frequency electrode is arranged on an upper portion of the plasma-generating space for generating a plasma discharge between the radio-frequency electrode and the partitioning wall section.

16. A CVD apparatus as stated in claim 2, wherein the radio-frequency electrode is arranged on an upper portion of the plasma-generating space for generating a plasma discharge between the radio-frequency electrode and the partitioning wall section.

23. A CVD apparatus as stated in claim 1, further comprising an RF power supply for feeding a cleaning RF power and a switch for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

25. A CVD apparatus in claim 5, wherein the connecting means includes a switch which selectively connects the partitioning wall to the RF power supply for feeding a cleaning RF power and to a ground for cleaning using the RF power supplied to the radio-frequency electrode in the first chamber.

26. A CVD apparatus as stated in claim 25, wherein the switch includes a first station for connecting the partitioning wall to the RF power supply for feeding a cleaning RF power and a second station for connecting the partitioning wall to a ground for cleaning using RF power supplied to the radio-frequency electrode in the first chamber.

30. A CVD apparatus as stated in claim 1, further comprising a circuit for connecting the partitioning wall to ground while a cleaning power is applied to the radio-frequency electrode so as to produce a cleaning plasma in the film deposition process space.

31. A CVD apparatus as claimed in claim 1, wherein the effective length is a length of a minimum diameter portion of the through-holes.

17. A CVD apparatus comprising:

a vacuum vessel having an inside in which plasma is produced to generate active species, and film deposition is performed on a substrate by using the active species and a reactive gas;

an electrically-conductive partitioning wall section formed in the vacuum vessel for separating the inside thereof into two chambers;

a first one of the two chambers is formed as a plasma-generating space and contains a radio-frequency electrode;

a second one of the two chambers is formed as a film deposition process space and contains a substrate support mechanism for mounting a substrate;

the partitioning wall section includes a plurality of through-holes to allow communication between the plasma-generating space and the film deposition process space;

the partitioning wall section includes an interior space separated from the plasma-generating space and communicating with the film deposition process space through a plurality of diffusion holes;

a device for delivering into the interior space a reactive gas supplied from outside the vacuum vessel, whereby the reactive gas thus supplied into the interior space is fed to the film deposition process space through the plurality of diffusion holes;

a device for delivering a first gas to the plasma-generating space so that it passes through the through-holes at velocity u such that an equation uL/D>

1 is satisfied where L represents a length of a minimum diameter portion of the through-holes and D represents an inter-diffusion coefficient between the first gas and the reactive gas; and

a device for supplying an RF power to the radio-frequency electrode for generating a plasma discharge in the plasma-generating space, by which the active species produced in the plasma-generating space are fed into the film deposition process space via the plurality of through-holes formed in the partitioning wall section.

18. The CVD apparatus as stated in claim 17, wherein the diffusion holes satisfy the requirements of uL/D>

1, where u represents the gas flow velocity in the holes, L represents the effective hole length, and D represents the inter-diffusion coefficient.

19. The CVD apparatus as stated in claim 17, wherein the interior space of the partitioning wall section comprises a diffusing structure of at least two layers for diffusing the reactive gas uniformly in the interior space.

20. A CVD apparatus as stated in claim 17, further comprising an RF power supply for feeding a cleaning RF power and means for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

21. A CVD apparatus as stated in claim 17, wherein the radio-frequency electrode is arranged in a center of the first one of the two chambers, and a plasma discharge is generated between (a) the radio-frequency electrode and (b) a part of the vacuum vessel and the partitioning wall section as an electrode surrounding a peripheral region of the radio-frequency electrode.

22. The CVD apparatus as claimed in claim 17, wherein the first gas is oxygen.

24. The CVD apparatus as claimed in claim 17, wherein the device for delivering the first gas includes a mass flow controller.

27. A CVD apparatus as stated in claim 17, further comprising an RF power supply for feeding a cleaning RF power and a switch for connecting the partitioning wall section to the RF power supply with suitable timing so as to produce a cleaning plasma in the film deposition process space.

28. A CVD apparatus as stated in claim 20, wherein the connecting means includes a switch which selectively connects the partitioning wall to the RF power supply for feeding a cleaning RF power and to a ground for cleaning using the RF power supplied to the radio-frequency electrode in the first chamber.

29. A CVD apparatus as stated in claim 28, wherein the switch includes a first station for connecting the partitioning wall to the RF power supply for feeding a cleaning RF power and a second station for connecting the partitioning wall to a ground for cleaning using the RF power supplied to the radio-frequency electrode in the first chamber.