Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
First Claim
1. A method of fabricating a silicon-on-insulator structure having a silicon layer in a semiconductor workpiece, said method comprising:
- placing said workpiece in a processing zone of a chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of said chamber near generally opposite sides of said processing zone and connected together by an external conduit of said chamber;
maintaining said workpiece at an elevated temperature;
introducing into said chamber a process gas comprising oxygen;
generating from said process gas a plasma current and causing said plasma current to oscillate in a circulatory reentrant path comprising said conduit and said processing zone.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.
248 Citations
59 Claims
-
1. A method of fabricating a silicon-on-insulator structure having a silicon layer in a semiconductor workpiece, said method comprising:
-
placing said workpiece in a processing zone of a chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of said chamber near generally opposite sides of said processing zone and connected together by an external conduit of said chamber;
maintaining said workpiece at an elevated temperature;
introducing into said chamber a process gas comprising oxygen;
generating from said process gas a plasma current and causing said plasma current to oscillate in a circulatory reentrant path comprising said conduit and said processing zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
-
-
23. The method of claim 23 wherein said threshold value is about 1018 cm−
- 3.
-
34. A method of fabricating a silicon-on-insulator structure having a silicon layer in a semiconductor workpiece, said method comprising:
-
maintaining said workpiece at an elevated temperature;
producing an oxygen-containing plasma in said chamber;
applying a bias to said workpiece and setting said bias to a level corresponding to an implant depth in said workpiece below said silicon layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in said workpiece having an oxygen concentration distribution generally centered at said implant depth and having a finite oxygen concentration in said silicon layer;
reducing said oxygen concentration in said silicon layer. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
-
Specification