Back illuminated photodiodes

• US 6,894,322 B2
• Filed: 02/10/2003
• Issued: 05/17/2005
• Est. Priority Date: 02/11/2002
• Status: Expired due to Fees

• Current Assignee: Lumentum Operations, LLC (Lumentum Holdings Inc.)
• Original Assignee: JDS Uniphase Corporation (Lumentum Holdings Inc.)
• Inventors: Kwan, Steven, Ben-Michael, Rafael, Itzler, Mark
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): Erdem, Fazli
• Application Number:
  US10/361,233
• Publication Number:
  US 20030178636A1
• Time in Patent Office: 827 Days
• Field of Search: 257/460, 257/436, 257/186, 257/2, 257/461, 257/462, 257/463
• US Class Current: 257/186
• CPC Class Codes: H01L 31/0304 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 31/1035 the devices comprising active layers formed only by AIIIBV compounds
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of Si_xN_y. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.

Claims

1. A photodetector comprising:

an input port at an input end face for receiving light to be detected, the input port being disposed about semiconductor layers including an absorption layer for absorbing light to be detected sandwiched between first and second light transmissive epitaxial semiconductor layers, the second light transmissive eptaxial semiconductor layer being a capping layer;

a passivation layer supported by only a portion of a surface of the second light transmissive epitaxial semiconductor capping layer, said passivation layer having an opening within for accommodating a ring of a first contact layer of alloyed material that is supported by a another portion of the surface of the second light transmissive semiconductor capping layer and at least partially alloyed therewith for providing electrical contact to the epitaxial semiconductor layers via the second light transmissive semiconductor capping layer; and

,

a highly reflective non-epitaxial III-V semiconductor, non-alloyed material supported in part by the first contact layer of alloyed material and supported in part by the passivation layer, said highly reflective non-epitaxial-III-V-semiconductor, non-alloyed material facing the epitaxial semiconductor layers for reflecting back light that propagated through the absorption layer for a second pass into the absorption layer;

wherein a primary electrical conduction path is formed between the first contact layer of alloyed material and the epitaxial semiconductor absorption layer.

2. A photodetector as defined in claim 1 wherein the highly reflective non-epitaxial-III-V semiconductor, non-alloyed material further includes a layer of Ti to promote adhesion to adjacent surfaces to which bonding occurs.

3. A photodetector as defined in claim 1 wherein the first contact layer is a ring of material having inner walls which confine a portion of the passivation layer within the ring.

4. A photodetector as defined in claim 1 further comprising a substantially uniform highly conductive contact layer substantially covering the highly reflective non-III-V epitaxial-semiconductor, non-alloyed material and the first contact layer of alloyed material.

5. A photodetector as defined in claim 4, wherein the uniform highly conductive contacting layer is gold.

6. A photodetector as defined in claim 1 wherein the highly reflective, non-III-V-epitaxial-semiconductor and non-alloyed material is gold.

7. A structure within a photodiode comprising:

a semiconductor absorptive active layer for receiving and absorbing input light;

a light transmissive passivating layer forming a window over the semiconductor absorptive active layer within a contact structure, the contact structure comprising;

an electrically conductive alloyed material which forms a principal electrically conducting path to the semiconductor active layer from a contact region, said alloyed material having an opening therein surrounding the light transmissive passivating layer;

a reflector of highly reflective non-epitaxial-III-V, non-alloyed other material provided over the window and partially supported by an upper surface of the alloyed material about the window; and

a layer of metal covering at least a portion of the highly reflective other material to promote adhension between the said material and at least the passivating layer forming the window.

8. A photodiode structure as defined in claim 7, wherein the layer of metal is a thin layer of titanium.

9. A structure within a photodiode comprising:

a semiconductor absorptive active layer for receiving and absorbing input light;

a light transmissive passivating layer forming a window over the semiconductor absorptive active layer within a contact structure, the contact structure comprising;

an electrically conductive alloyed material which forms a principal electrically conducting path to the semiconductor active layer from a contact region, said alloyed material having an opening therein surrounding the light transmissive passivating layer;

a reflector of highly reflective non-epitaxial-III-V, non-alloyed other material provided over the window and partially supported by an upper surface of the alloyed material about the window; and

a first layer and a second layer of light transmissive semiconductor material sandwiching the semiconductor absorptive active layer.

10. A photodiode structure as defined in claim 9, wherein the second layer of semiconductor material is electrically conducting and contacts the alloyed material and the passivating layer.

11. A photodiode as defined in claim 10, wherein the alloyed material is a ring-like structure.

12. A photodiode as defined in claim 11, wherein the passivating layer is contained within an opening in the ring-like structure.

13. A photodiode as defined in claim 10, wherein the passivating layer is bounded by and contacting the alloyed material, the second layer of semiconductor material, and an adhesion layer coating the highly reflective non-epitaxial-III-V, non-alloyed other material.

14. A photodiode as defined in claim 13, further comprising a layer of highly conducting material disposed over and contacting both the alloyed material and the highly reflective non-III-V, non-alloyed other material.

15. A photodiode as defined in claim 14, wherein the layer of highly conducting material is gold.